发布求助
文献互助 智能选刊 最新文献

Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)最新文献

筛选
英文 中文
Quantum wells and quantum dots for photonics and electronics: Fundamentals and applications 光子学和电子学的量子阱和量子点:基础和应用
Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199) Pub Date : 1998-03-12 DOI: 10.1109/LDS.1998.713842
M. Willander, E. L. Ivchenko, Y. Fu
{"title":"Quantum wells and quantum dots for photonics and electronics: Fundamentals and applications","authors":"M. Willander, E. L. Ivchenko, Y. Fu","doi":"10.1109/LDS.1998.713842","DOIUrl":"https://doi.org/10.1109/LDS.1998.713842","url":null,"abstract":"We present our recent results on exciton-polariton photonics in microcavities with embedded quantum wells (QWs) and in quantum-dot (QD) lattices. Quantum transport in nanostructures based on QWs and QDs will be discussed as well.","PeriodicalId":326271,"journal":{"name":"Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115979518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electron electron interaction and classical mesoscopic phenomena in semiconductors 半导体中的电子-电子相互作用和经典介观现象
Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199) Pub Date : 1998-03-12 DOI: 10.1109/LDS.1998.714528
S. Luryi
{"title":"Electron electron interaction and classical mesoscopic phenomena in semiconductors","authors":"S. Luryi","doi":"10.1109/LDS.1998.714528","DOIUrl":"https://doi.org/10.1109/LDS.1998.714528","url":null,"abstract":"I discuss the effect of electron-electron interaction on classical mesoscopic phenomena in semiconductor devices, as manifested by the well-known phonon conductivity oscillations in tunnel junctions. The central idea is the realization that the temperature dependence of the oscillation amplitude contains a direct and unambiguous information about the rate of electron-electron scattering in the material studied. Quantitative theory to be developed and device modeling based on this theory should enable a unique characterization of electron-electron interaction, extracting parameters relevant to the operation of important semiconductor devices.","PeriodicalId":326271,"journal":{"name":"Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122351897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Controllability of single electron tunneling and change in Coulomb diamond caused by environmental impedance modulation 环境阻抗调制引起的单电子隧穿的可控性和库仑金刚石的变化
Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199) Pub Date : 1998-03-12 DOI: 10.1109/LDS.1998.714541
F. Wakaya, F. Yoshioka, H. Higurashi, S. Iwabuchi, Y. Nagaoka, K. Gamo
{"title":"Controllability of single electron tunneling and change in Coulomb diamond caused by environmental impedance modulation","authors":"F. Wakaya, F. Yoshioka, H. Higurashi, S. Iwabuchi, Y. Nagaoka, K. Gamo","doi":"10.1109/LDS.1998.714541","DOIUrl":"https://doi.org/10.1109/LDS.1998.714541","url":null,"abstract":"Single-electron-tunneling device with variable environmental impedance (Z-SET) is considered. It is numerically shown that resistive environmental impedance can control the Coulomb gap and capacitive environmental impedance degrade the controllability of Z-SET. It is experimentally observed that the Coulomb gap becomes large as the negative gate voltages to control the environmental resistance becomes large. In order to consider the origin of the observed enlargement of the Coulomb gap. The effect of environmental impedance on the shape of the Coulomb diamond is also discussed.","PeriodicalId":326271,"journal":{"name":"Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114379763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New approaches to infrared and terahertz generation 红外线和太赫兹产生的新方法
Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199) Pub Date : 1998-03-12 DOI: 10.1109/LDS.1998.714529
H. Liu
{"title":"New approaches to infrared and terahertz generation","authors":"H. Liu","doi":"10.1109/LDS.1998.714529","DOIUrl":"https://doi.org/10.1109/LDS.1998.714529","url":null,"abstract":"This paper provides an extended summary of several new approaches to infrared and terahertz generation. First the issues and the state of the arts are outlined, and then ideas of new approaches and devices are introduced. References are cited for details.","PeriodicalId":326271,"journal":{"name":"Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130832952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electron subband population and mobility in asymmetric coupled quantum wells 非对称耦合量子阱中电子子带居数与迁移率
Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199) Pub Date : 1998-03-12 DOI: 10.1109/LDS.1998.714530
J. Požela, K. Požėla, V. Jucienė, A. Namajunas
{"title":"Electron subband population and mobility in asymmetric coupled quantum wells","authors":"J. Požela, K. Požėla, V. Jucienė, A. Namajunas","doi":"10.1109/LDS.1998.714530","DOIUrl":"https://doi.org/10.1109/LDS.1998.714530","url":null,"abstract":"The electron subband energy and population engineering by inserting a thin AlGaAs barrier inside a GaAs quantum well (QW) is considered. The specific voltage across the coupled QW's which arises due to the asymmetric deformation of electron wave function is calculated. The simplified analytical model for confined and interface polar optical phonons in the double barrier GaAs QW with inserted AlGaAs barrier is described. The electron-polar optical phonon scattering rates, the electron mobility and the photoexcited electron subband population as functions of the position of the AlGaAs barrier in the asymmetric coupled QW's are considered.","PeriodicalId":326271,"journal":{"name":"Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130930379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-speed single-electron memory: cell design and architecture 高速单电子存储器:单元设计与结构
Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199) Pub Date : 1998-03-12 DOI: 10.1109/LDS.1998.714536
H. Mizuta, D. Williams, K. Katayama, H. Muller, K. Nakazato, H. Ahmed
{"title":"High-speed single-electron memory: cell design and architecture","authors":"H. Mizuta, D. Williams, K. Katayama, H. Muller, K. Nakazato, H. Ahmed","doi":"10.1109/LDS.1998.714536","DOIUrl":"https://doi.org/10.1109/LDS.1998.714536","url":null,"abstract":"A new silicon-based single-electron memory cell is presented for use as a high-speed RAM. Novel architecture and operation schemes are evaluated by conducting Monte Carlo single-electron simulations. By performing transient waveform analysis, a high-speed write operation is demonstrated with a write time shorter than 10 nsec.","PeriodicalId":326271,"journal":{"name":"Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123292722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Modeling quantum transport in semiconductor nanostructures 模拟半导体纳米结构中的量子输运
Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199) Pub Date : 1998-03-12 DOI: 10.1109/LDS.1998.714534
D. Ferry, R. Akis, J. P. Bird, D. Pivin, N. Holmberg, F. Badrieh, D. Vasileska
{"title":"Modeling quantum transport in semiconductor nanostructures","authors":"D. Ferry, R. Akis, J. P. Bird, D. Pivin, N. Holmberg, F. Badrieh, D. Vasileska","doi":"10.1109/LDS.1998.714534","DOIUrl":"https://doi.org/10.1109/LDS.1998.714534","url":null,"abstract":"There are a variety of situations in which carriers sit in small 3D quantum boxes containing a small number of electrons per box. In a sense, this range of problems takes us from unintentional quantum dots in MOSFETs (arising from the doping fluctuations) to single-electron quantum dots in semiconductor heterostructures. In between these two extremes are the realm of open quantum dots, in which the transport can be quite regular. These dots are characterized by periodic, oscillatory fluctuations in their magnetoconductance, which replicate the partial density of states in the dot itself. In this paper, we will discuss the modeling of quantum transport through open, ballistic dots through the use of the coupled Schrodinger/Poisson equation, and stabilized mode matching techniques.","PeriodicalId":326271,"journal":{"name":"Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129577147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Monte Carlo particle modeling of electron velocity overshoot effect in MSM photodiodes MSM光电二极管中电子速度超调效应的蒙特卡罗粒子模拟
Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199) Pub Date : 1998-03-12 DOI: 10.1109/LDS.1998.714533
M. Ryzhii, M. Willander, I. Khmyrova, V. Ryzhii
{"title":"Monte Carlo particle modeling of electron velocity overshoot effect in MSM photodiodes","authors":"M. Ryzhii, M. Willander, I. Khmyrova, V. Ryzhii","doi":"10.1109/LDS.1998.714533","DOIUrl":"https://doi.org/10.1109/LDS.1998.714533","url":null,"abstract":"We present a numerical study of metal-semiconductor-metal (MSM) photodiodes based on a planar structure composed of interdigitated Schottky contacts on top of a thin GaAs absorbing layer with lateral light input. A self-consistent ensemble Monte Carlo (MC) particle method with the Fourier transform of the calculated transient photocurrent is used to obtain the frequency dependent responsivity. It is shown that the MSM photodiodes can exhibit marked responsivity in terahertz range of signal frequencies even for contact spacing about few tenth of micrometer. The results of the MC simulation are discussed invoking proposed analytical model.","PeriodicalId":326271,"journal":{"name":"Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128646068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultrahigh-speed resonant tunneling circuits 超高速谐振隧道电路
Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199) Pub Date : 1998-03-12 DOI: 10.1109/LDS.1998.714537
T. Waho, T. Itoh, M. Yamamoto
{"title":"Ultrahigh-speed resonant tunneling circuits","authors":"T. Waho, T. Itoh, M. Yamamoto","doi":"10.1109/LDS.1998.714537","DOIUrl":"https://doi.org/10.1109/LDS.1998.714537","url":null,"abstract":"By using InP-based RTD/HEMT integration technology, we fabricated ultrahigh-speed resonant-tunneling circuits, i.e., ternary and quaternary quantizers. The quantizing operation at room temperature was confirmed at a clock frequency of 10 GHz for input frequencies as high as 4.7 GHz. SPICE simulation proved that a 4-bit flash-type analog-to-digital converter which consists of the quaternary quantizers, can operate at a sampling frequency of 10 GHz.","PeriodicalId":326271,"journal":{"name":"Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116897659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Plasma waves excitation in the base of lateral hot electron transistor 横向热电子晶体管基底的等离子体波激发
Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199) Pub Date : 1998-03-12 DOI: 10.1109/LDS.1998.714539
Leonid Fedichkin, V. Ryzhii, M. Willander
{"title":"Plasma waves excitation in the base of lateral hot electron transistor","authors":"Leonid Fedichkin, V. Ryzhii, M. Willander","doi":"10.1109/LDS.1998.714539","DOIUrl":"https://doi.org/10.1109/LDS.1998.714539","url":null,"abstract":"Lateral hot-electron transistors (LHETs) attracts great attention as a possible basis for high frequency (HF) microelectronics. In contrast to previous work the excitation of plasma waves with a linear dispersion law in the LHET base is taken into account. It is shown that plasma effects can play an important role in LHET operation. We propose to induce plasma waves in the base of LHET by the input a.c. voltage. The resonant behaviour of transistor parameters allows us to call it as Resonant Lateral Hot electron Transistor (RLHET). By generalizing Dyakonov-Shur approach we succeeded to obtain analytical expression for LHET transconductance accounting plasma oscillations. It is shown that the emitter current of such a device has a resonant response to the applied HF base voltage determined by the standing plasma waves resonances of 2DEG in the base, which can be in the terahertz range, depending on the base length. The resonant transconductance can significantly exceed its steady state value. This device can be used both for the experimental study of 2DEG parameters and as a selective, tunable HF amplifier.","PeriodicalId":326271,"journal":{"name":"Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)","volume":"302 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127372672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信