{"title":"半导体中的电子-电子相互作用和经典介观现象","authors":"S. Luryi","doi":"10.1109/LDS.1998.714528","DOIUrl":null,"url":null,"abstract":"I discuss the effect of electron-electron interaction on classical mesoscopic phenomena in semiconductor devices, as manifested by the well-known phonon conductivity oscillations in tunnel junctions. The central idea is the realization that the temperature dependence of the oscillation amplitude contains a direct and unambiguous information about the rate of electron-electron scattering in the material studied. Quantitative theory to be developed and device modeling based on this theory should enable a unique characterization of electron-electron interaction, extracting parameters relevant to the operation of important semiconductor devices.","PeriodicalId":326271,"journal":{"name":"Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Electron electron interaction and classical mesoscopic phenomena in semiconductors\",\"authors\":\"S. Luryi\",\"doi\":\"10.1109/LDS.1998.714528\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"I discuss the effect of electron-electron interaction on classical mesoscopic phenomena in semiconductor devices, as manifested by the well-known phonon conductivity oscillations in tunnel junctions. The central idea is the realization that the temperature dependence of the oscillation amplitude contains a direct and unambiguous information about the rate of electron-electron scattering in the material studied. Quantitative theory to be developed and device modeling based on this theory should enable a unique characterization of electron-electron interaction, extracting parameters relevant to the operation of important semiconductor devices.\",\"PeriodicalId\":326271,\"journal\":{\"name\":\"Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-03-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LDS.1998.714528\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LDS.1998.714528","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electron electron interaction and classical mesoscopic phenomena in semiconductors
I discuss the effect of electron-electron interaction on classical mesoscopic phenomena in semiconductor devices, as manifested by the well-known phonon conductivity oscillations in tunnel junctions. The central idea is the realization that the temperature dependence of the oscillation amplitude contains a direct and unambiguous information about the rate of electron-electron scattering in the material studied. Quantitative theory to be developed and device modeling based on this theory should enable a unique characterization of electron-electron interaction, extracting parameters relevant to the operation of important semiconductor devices.