High-speed single-electron memory: cell design and architecture

Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199) Pub Date : 1998-03-12 DOI:10.1109/LDS.1998.714536

H. Mizuta, D. Williams, K. Katayama, H. Muller, K. Nakazato, H. Ahmed

引用次数: 7

Abstract

A new silicon-based single-electron memory cell is presented for use as a high-speed RAM. Novel architecture and operation schemes are evaluated by conducting Monte Carlo single-electron simulations. By performing transient waveform analysis, a high-speed write operation is demonstrated with a write time shorter than 10 nsec.

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高速单电子存储器:单元设计与结构

提出了一种用于高速RAM的新型硅基单电子存储单元。通过蒙特卡罗单电子模拟，对新的结构和操作方案进行了评价。通过瞬态波形分析，证明了高速写入操作的写入时间小于10nsec。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)

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