{"title":"Electron electron interaction and classical mesoscopic phenomena in semiconductors","authors":"S. Luryi","doi":"10.1109/LDS.1998.714528","DOIUrl":null,"url":null,"abstract":"I discuss the effect of electron-electron interaction on classical mesoscopic phenomena in semiconductor devices, as manifested by the well-known phonon conductivity oscillations in tunnel junctions. The central idea is the realization that the temperature dependence of the oscillation amplitude contains a direct and unambiguous information about the rate of electron-electron scattering in the material studied. Quantitative theory to be developed and device modeling based on this theory should enable a unique characterization of electron-electron interaction, extracting parameters relevant to the operation of important semiconductor devices.","PeriodicalId":326271,"journal":{"name":"Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LDS.1998.714528","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
I discuss the effect of electron-electron interaction on classical mesoscopic phenomena in semiconductor devices, as manifested by the well-known phonon conductivity oscillations in tunnel junctions. The central idea is the realization that the temperature dependence of the oscillation amplitude contains a direct and unambiguous information about the rate of electron-electron scattering in the material studied. Quantitative theory to be developed and device modeling based on this theory should enable a unique characterization of electron-electron interaction, extracting parameters relevant to the operation of important semiconductor devices.