环境阻抗调制引起的单电子隧穿的可控性和库仑金刚石的变化

Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199) Pub Date : 1998-03-12 DOI:10.1109/LDS.1998.714541

F. Wakaya, F. Yoshioka, H. Higurashi, S. Iwabuchi, Y. Nagaoka, K. Gamo

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引用次数: 0

摘要

研究了可变环境阻抗单电子隧穿器件。数值计算表明，电阻性环境阻抗可以控制库仑间隙，而电容性环境阻抗降低了Z-SET的可控性。实验观察到，控制环境电阻的负栅极电压越大，库仑间隙越大。为了考虑观察到的库仑间隙扩大的起源。讨论了环境阻抗对库仑金刚石形状的影响。

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Controllability of single electron tunneling and change in Coulomb diamond caused by environmental impedance modulation

Single-electron-tunneling device with variable environmental impedance (Z-SET) is considered. It is numerically shown that resistive environmental impedance can control the Coulomb gap and capacitive environmental impedance degrade the controllability of Z-SET. It is experimentally observed that the Coulomb gap becomes large as the negative gate voltages to control the environmental resistance becomes large. In order to consider the origin of the observed enlargement of the Coulomb gap. The effect of environmental impedance on the shape of the Coulomb diamond is also discussed.

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Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)

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