MSM光电二极管中电子速度超调效应的蒙特卡罗粒子模拟

Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199) Pub Date : 1998-03-12 DOI:10.1109/LDS.1998.714533

M. Ryzhii, M. Willander, I. Khmyrova, V. Ryzhii

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引用次数: 0

摘要

我们提出了一种基于平面结构的金属-半导体-金属(MSM)光电二极管的数值研究，该结构由横向光输入的薄砷化镓吸收层顶部的交叉肖特基触点组成。采用自洽系集合蒙特卡罗(MC)粒子法对计算得到的瞬态光电流进行傅里叶变换，得到了随频率变化的响应度。结果表明，MSM光电二极管在太赫兹信号频率范围内，即使接触间距仅为十分之一微米，也能表现出明显的响应性。利用所提出的分析模型对MC仿真结果进行了讨论。

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Monte Carlo particle modeling of electron velocity overshoot effect in MSM photodiodes

We present a numerical study of metal-semiconductor-metal (MSM) photodiodes based on a planar structure composed of interdigitated Schottky contacts on top of a thin GaAs absorbing layer with lateral light input. A self-consistent ensemble Monte Carlo (MC) particle method with the Fourier transform of the calculated transient photocurrent is used to obtain the frequency dependent responsivity. It is shown that the MSM photodiodes can exhibit marked responsivity in terahertz range of signal frequencies even for contact spacing about few tenth of micrometer. The results of the MC simulation are discussed invoking proposed analytical model.

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Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)

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