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2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics最新文献

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Non-Volatile Memory Concepts Based on Resistive Switching 基于电阻开关的非易失性存储器概念
2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI: 10.1109/ISAF.2007.4393162
R. Waser
{"title":"Non-Volatile Memory Concepts Based on Resistive Switching","authors":"R. Waser","doi":"10.1109/ISAF.2007.4393162","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393162","url":null,"abstract":"A wide spectrum of resistively switching metal-insulator-metal systems has been proposed for future non-volatile memory applications. This paper attempts a classification of the phenomena and the conceivable microscopic mechanism.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125076360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Effects of Rapid Thermal Annealing on Nucleation and Growth Behavior of Lead Zirconate Titanate Films 快速热处理对锆钛酸铅薄膜成核和生长行为的影响
2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI: 10.1109/ISAF.2007.4393174
Jian Lu, Yi Zhang, T. Ikehara, Takashi Mihara, R. Maeda
{"title":"Effects of Rapid Thermal Annealing on Nucleation and Growth Behavior of Lead Zirconate Titanate Films","authors":"Jian Lu, Yi Zhang, T. Ikehara, Takashi Mihara, R. Maeda","doi":"10.1109/ISAF.2007.4393174","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393174","url":null,"abstract":"This paper investigated the effects of rapid thermal annealing (RTA) on nucleation and growth behavior of sol-gel derived lead zirconate titanate (PZT) films. The effects of RTA on films' surface morphology, residual stress and orientation were also studied. It was found that residual stress of the film can be effectively reduced by extending the RTA time. High heating-rate was preferred for uniform PZT film nucleation and grain-growth, which resulted in dense microstructures and smooth film surface. Low heating-rate lead to strong PZT (100) orientation and low residual stress, but at the risk of film-crack caused by arbitrarily distributed large crystallites of about 300 nm in diameter among those with diameter of ~30 nm.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128265352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electron emission from ferroelectric thin films enhanced by the presence of ferroelectric domains 铁电畴的存在增强了铁电薄膜的电子发射
2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI: 10.1109/ISAF.2007.4393261
G. Suchaneck, V. S. Vidyarthi, G. Milde, G. Gerlach, A. Solnyshkin, I. Kislova, T. Otto, R. Reichenbach, H. Klumbies, O. Mieth, L. Eng
{"title":"Electron emission from ferroelectric thin films enhanced by the presence of ferroelectric domains","authors":"G. Suchaneck, V. S. Vidyarthi, G. Milde, G. Gerlach, A. Solnyshkin, I. Kislova, T. Otto, R. Reichenbach, H. Klumbies, O. Mieth, L. Eng","doi":"10.1109/ISAF.2007.4393261","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393261","url":null,"abstract":"In this work ferroelectric domain enhanced electron emission mechanisms are proposed. The polarization distribution near 90deg domain walls is calculated by solving a set of second order differential equations including the Poisson's one and equations derived from an expansion of the free energy Phi(P) in power series of the polarization according to the Devonshire-Landau-Ginzburg theory. Domain walls intersecting the emitting surface cause sufficient electric fields and lower the potential barrier for electron emission. This induces centers of enhanced electron emission. Relaxing domain walls were found to excitate trapped excess electrons in front of the wall.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130164047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Key process technology for high density 64M FeRAM and beyond 高密度64M FeRAM及以上的关键工艺技术
2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI: 10.1109/ISAF.2007.4393153
K. Yamakawa, T. Ozaki, H. Kanaya, I. Kunishima, Y. Kumura, Y. Shimojo, S. Shuto, O. Hidaka, Yuki Yamada, S. Yamazaki, S. Shiratake, D. Takashima, T. Miyakawa, S. Ohtsuki, T. Hamamoto
{"title":"Key process technology for high density 64M FeRAM and beyond","authors":"K. Yamakawa, T. Ozaki, H. Kanaya, I. Kunishima, Y. Kumura, Y. Shimojo, S. Shuto, O. Hidaka, Yuki Yamada, S. Yamazaki, S. Shiratake, D. Takashima, T. Miyakawa, S. Ohtsuki, T. Hamamoto","doi":"10.1109/ISAF.2007.4393153","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393153","url":null,"abstract":"Difficulty to achieve high density FeRAMs with sub-micron ferroelectric capacitors is widely understood due to damage to the capacitors. Key process techniques such as high quality ferroelectric film deposition, electrode preparation, capacitor RIE and hydrogen barrier structure formation are introduced for 64M FeRAMs with sub micron high reliability PZT capacitors.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130771648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A General Approach to Perturbation Theoretic Calculations of Nonlinear Susceptibility Coefficient Tensors for Ferroelectric Materials 铁电材料非线性磁化系数张量摄动理论计算的一般方法
2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI: 10.1109/ISAF.2007.4393234
J. F. Webb
{"title":"A General Approach to Perturbation Theoretic Calculations of Nonlinear Susceptibility Coefficient Tensors for Ferroelectric Materials","authors":"J. F. Webb","doi":"10.1109/ISAF.2007.4393234","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393234","url":null,"abstract":"Perturbation analysis in which the time variation of an electric field is treated as inducing a weakly nonlinear response that is expressed as a Taylor series expansion is a standard technique for deriving the nonlinear susceptibility coefficients that relate the electric field to the polarization. In this paper a generalized method is used to generate the coefficients and Fourier analysis is employed in order to treat any time dependent electric field as a superposition of single frequency waves. It is then shown how this method can be applied to the calculation of nonlinear susceptibility coefficients in bulk ferroelectric materials in such a way that preserves the tensorial nature of the coefficients, appropriate for crystalline materials. An advantage of this general approach is that it is useful for the development of computer modelling packages involving nonlinear calculations.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132891671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Temperature Properties of PZT Actuated High-Speed Metal-Based Optical Resonant Scanners PZT驱动高速金属基光学谐振扫描仪的温度特性
2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI: 10.1109/ISAF.2007.4393379
Jaehyuk Park, Youngkyu Park, J. Akedo
{"title":"Temperature Properties of PZT Actuated High-Speed Metal-Based Optical Resonant Scanners","authors":"Jaehyuk Park, Youngkyu Park, J. Akedo","doi":"10.1109/ISAF.2007.4393379","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393379","url":null,"abstract":"High speed metal-based optical scanning devices were successfully fabricated in combination with piezoelectric thick films directly deposited by the aerosol deposition method (ADM) and specially designed stainless steel frame. A large optical scanning angle (41deg) was achieved at a high resonance frequency (28.24 kHz) in ambient air without vacuum packaging. The well-polished metal-based mirror has good flatness of less than 105 nm, which is lower than omega4. Sepcially, we carried out in the range from -20'C to 80'C at environmental chamber to investigate temperature properties of metal-based optical scanner. The scanning angle is linearly increased with increase of temperature, while the resonant frequency is linearly decreased as temperature increased. Also, we compared with performance of metal-based optical scanner driven by bulk PZT and AD-PZT thick films.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125355811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electrical and electromechanical characterization of piezoelectric thin films in view of MEMS application 基于MEMS应用的压电薄膜电学和机电特性研究
2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI: 10.1109/ISAF.2007.4393376
S. Tiedke, K. Prume, T. Schmitz-Kempen
{"title":"Electrical and electromechanical characterization of piezoelectric thin films in view of MEMS application","authors":"S. Tiedke, K. Prume, T. Schmitz-Kempen","doi":"10.1109/ISAF.2007.4393376","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393376","url":null,"abstract":"The electrical and electromechanical properties of piezoelectric thin films were measured using different measurement procedures including a new method which combines the measurement of both the effective longitudinal and transverse piezoelectric coefficients on the same sample under precisely defined homogeneous mechanical strain utilizing a 4-point bending setup. Stress and corresponding strain distributions in the film were verified by finite element simulations.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125531295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Deposition of piezoelectric AlN thin film on diamond substrate for SHF SAW devices 在SHF SAW器件的金刚石衬底上沉积压电AlN薄膜
2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI: 10.1109/ISAF.2007.4393390
T. Omori, K. Chida, A. Yuki, K. Hashimoto, M. Yamaguchi
{"title":"Deposition of piezoelectric AlN thin film on diamond substrate for SHF SAW devices","authors":"T. Omori, K. Chida, A. Yuki, K. Hashimoto, M. Yamaguchi","doi":"10.1109/ISAF.2007.4393390","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393390","url":null,"abstract":"The preparation of piezoelectric AIN thin films of high quality onto diamond substrates using DC-TFTS method and its application to SHF SAW devices are discussed. FWHM (=3.4deg) of the rocking curve of XRD suggested that the c-axes of AIN films may well align perpendicular to the film surface. Transversal filters based on Sezawa wave were fabricated to verify whether the prepared AIN/diamond structure can be applied to low loss SAW devices in an SHF range. The propagation loss was experimentally estimated to be 0.08 dB/lambda at the centre frequency of 6.12 GHz. Further reduction in the propagation loss was attempted by using small-grain-diamond substrates.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123343142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Drift of charged defects in local fields as a mechanism of degradation in ferroelectrics 局部电场中带电缺陷漂移作为铁电体退化机制
2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI: 10.1109/ISAF.2007.4393250
Y. Genenko, D. Lupascu
{"title":"Drift of charged defects in local fields as a mechanism of degradation in ferroelectrics","authors":"Y. Genenko, D. Lupascu","doi":"10.1109/ISAF.2007.4393250","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393250","url":null,"abstract":"Two-dimensional model of point defect migration in ferroelectrics is advanced. Charge defect drift-diffusion in local depolarization fields is considered as a mechanism for aging in ferroelectrics. Numerical results are given for the coupled problems of point defect transport and electrostatic field relaxation in a 2D domain configuration. Peak values of the clamping pressure at domain walls due to space charge formation are in the range of 1divide10 MPa and the consequent coercive field is in the range of 1 kV/mm in agreement with observed coercive stresses and fields in bulk perovskite ferroelectrics.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122298554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dielectric Characterization of Barium strontium titanate (BST) Films Prepared on Cu Substrate By Aerosol Deposited Method 气溶胶沉积法制备钛酸锶钡薄膜的介电特性
2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI: 10.1109/ISAF.2007.4393215
Se-Woong Oh, Jaehyuk Park, J. Akedo
{"title":"Dielectric Characterization of Barium strontium titanate (BST) Films Prepared on Cu Substrate By Aerosol Deposited Method","authors":"Se-Woong Oh, Jaehyuk Park, J. Akedo","doi":"10.1109/ISAF.2007.4393215","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393215","url":null,"abstract":"Polycrystalline barium strontium titanate (Ba<sub>x</sub>Sr<sub>1-x</sub>TiO<sub>3</sub>, BST) films were directly prepared on copper substrate using aerosol deposition method (ADM) at room-temperature. We investigated the relationships between their properties such as dielectric constant and tunability, and Ba content in Ba<sub>x</sub>Sr<sub>1-x</sub>TiO<sub>3</sub> (x=1.0, 0.6, 0.4) films. At the frequency of 100 kHz, the dielectric constant of the as-deposited BST film were 100, 201, and 72 at x = 1.0, 0.6, 0.4, respectively. After annealing in N<sub>2</sub> gas ambient at 600degC for 10 min, the dielectric constant and dielectric loss of BST (x=0.6) film were 380 and 2.0 x 10<sup>-3</sup> at 100 kHz, respectively. Moreover, BST (x=0.6) film even showed a high tunability of 30 % at an applied electric field of 300 kV cm<sup>-1</sup>.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"160 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114174832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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