{"title":"基于电阻开关的非易失性存储器概念","authors":"R. Waser","doi":"10.1109/ISAF.2007.4393162","DOIUrl":null,"url":null,"abstract":"A wide spectrum of resistively switching metal-insulator-metal systems has been proposed for future non-volatile memory applications. This paper attempts a classification of the phenomena and the conceivable microscopic mechanism.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Non-Volatile Memory Concepts Based on Resistive Switching\",\"authors\":\"R. Waser\",\"doi\":\"10.1109/ISAF.2007.4393162\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A wide spectrum of resistively switching metal-insulator-metal systems has been proposed for future non-volatile memory applications. This paper attempts a classification of the phenomena and the conceivable microscopic mechanism.\",\"PeriodicalId\":321007,\"journal\":{\"name\":\"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-05-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.2007.4393162\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2007.4393162","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Non-Volatile Memory Concepts Based on Resistive Switching
A wide spectrum of resistively switching metal-insulator-metal systems has been proposed for future non-volatile memory applications. This paper attempts a classification of the phenomena and the conceivable microscopic mechanism.