K. Yamakawa, T. Ozaki, H. Kanaya, I. Kunishima, Y. Kumura, Y. Shimojo, S. Shuto, O. Hidaka, Yuki Yamada, S. Yamazaki, S. Shiratake, D. Takashima, T. Miyakawa, S. Ohtsuki, T. Hamamoto
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Key process technology for high density 64M FeRAM and beyond
Difficulty to achieve high density FeRAMs with sub-micron ferroelectric capacitors is widely understood due to damage to the capacitors. Key process techniques such as high quality ferroelectric film deposition, electrode preparation, capacitor RIE and hydrogen barrier structure formation are introduced for 64M FeRAMs with sub micron high reliability PZT capacitors.
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