铁电畴的存在增强了铁电薄膜的电子发射

G. Suchaneck, V. S. Vidyarthi, G. Milde, G. Gerlach, A. Solnyshkin, I. Kislova, T. Otto, R. Reichenbach, H. Klumbies, O. Mieth, L. Eng
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引用次数: 5

摘要

本文提出了铁电畴增强电子发射机制。根据Devonshire-Landau-Ginzburg理论,通过求解一组二阶微分方程,包括泊松方程和由极化幂级数中自由能Phi(P)展开的方程,计算了90°畴壁附近的极化分布。与发射面相交的畴壁产生了足够的电场,降低了电子发射的势垒。这就产生了增强的电子发射中心。弛豫畴壁可以激发畴壁前的多余电子。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electron emission from ferroelectric thin films enhanced by the presence of ferroelectric domains
In this work ferroelectric domain enhanced electron emission mechanisms are proposed. The polarization distribution near 90deg domain walls is calculated by solving a set of second order differential equations including the Poisson's one and equations derived from an expansion of the free energy Phi(P) in power series of the polarization according to the Devonshire-Landau-Ginzburg theory. Domain walls intersecting the emitting surface cause sufficient electric fields and lower the potential barrier for electron emission. This induces centers of enhanced electron emission. Relaxing domain walls were found to excitate trapped excess electrons in front of the wall.
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