在SHF SAW器件的金刚石衬底上沉积压电AlN薄膜

T. Omori, K. Chida, A. Yuki, K. Hashimoto, M. Yamaguchi
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引用次数: 1

摘要

讨论了用DC-TFTS方法在金刚石衬底上制备高质量的压电AIN薄膜及其在SHF SAW器件中的应用。XRD摇摆曲线的FWHM(=3.4°)表明,AIN薄膜的c轴可以很好地垂直于薄膜表面。制作了基于Sezawa波的横向滤波器,以验证所制备的AIN/金刚石结构是否可以应用于SHF范围内的低损耗SAW器件。实验估计在6.12 GHz的中心频率下,传输损耗为0.08 dB/lambda。通过使用小晶粒金刚石衬底,进一步降低了传播损耗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Deposition of piezoelectric AlN thin film on diamond substrate for SHF SAW devices
The preparation of piezoelectric AIN thin films of high quality onto diamond substrates using DC-TFTS method and its application to SHF SAW devices are discussed. FWHM (=3.4deg) of the rocking curve of XRD suggested that the c-axes of AIN films may well align perpendicular to the film surface. Transversal filters based on Sezawa wave were fabricated to verify whether the prepared AIN/diamond structure can be applied to low loss SAW devices in an SHF range. The propagation loss was experimentally estimated to be 0.08 dB/lambda at the centre frequency of 6.12 GHz. Further reduction in the propagation loss was attempted by using small-grain-diamond substrates.
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