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Structural and electrical properties of PLZT (8/65/35) thin films prepared by MOD method MOD法制备PLZT(8/65/35)薄膜的结构与电学性能
International Conference on Thin Film Physics and Applications Pub Date : 2010-10-11 DOI: 10.1117/12.888385
Jianqiang Luo, Weiguo Liu, Shun Zhou, Xiaotao Sun
{"title":"Structural and electrical properties of PLZT (8/65/35) thin films prepared by MOD method","authors":"Jianqiang Luo, Weiguo Liu, Shun Zhou, Xiaotao Sun","doi":"10.1117/12.888385","DOIUrl":"https://doi.org/10.1117/12.888385","url":null,"abstract":"Pyroelectric lead lanthanum zirconnate titanate (PbLa8Zr65Ti35) thin films were prepared by a metal-organic decomposition (MOD) method on Pt(111)/Ti/SiO2/Si(100) substrate. After annealing at different temperatures with the same annealing time, the amorphous films were transformed into polycrystalline PLZT films. The phase formation and surface microstructure were investigated by X-ray diffraction (XRD) and atom force microscopy (AFM). The XRD data showed the formation of pervoskite phase at 650°C and indicated suppression of pyrochlore phase as temperature increasing. The PLZT pyroelectric sensor was fabricated based on sensitive barrier layer instead of the other type barrier layer. Finally, dielectric and pyroelectric coefficients was also measured.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124871264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparative investigation of infrared optical absorption properties of silicon oxide, oxynitride and nitride films 氧化硅、氮化氧和氮化膜红外光吸收性能的比较研究
International Conference on Thin Film Physics and Applications Pub Date : 2010-10-11 DOI: 10.1117/12.888194
Shun Zhou, Weiguo Liu, Chang-long Cai, Huan Liu
{"title":"Comparative investigation of infrared optical absorption properties of silicon oxide, oxynitride and nitride films","authors":"Shun Zhou, Weiguo Liu, Chang-long Cai, Huan Liu","doi":"10.1117/12.888194","DOIUrl":"https://doi.org/10.1117/12.888194","url":null,"abstract":"Amorphous silicon oxide, silicon oxynitride and silicon nitride films were deposited in a PECVD reactor using silane (SiH4),ammonia (NH3) and nitrous oxide (N2O) as precursor gases. The N2O/NH3 flow ratio was varied in order to obtain different oxynitride compositions. The films were characterized by spectroscopic ellipsometry, XPS and FTIR spectroscopy. The compositions and infrared optical absorption properties of the three different types of films were investigated and compared. Special attention was paid to analyze the Si-O/Si-N bond stretching absorption including the absorption band intensity. It was found that the silicon oxynitride films show a dominant infrared stretching band due to the Si-O/Si-N bond , with the infrared absorption peak located between 860cm-1(11.6μm) for Si-N bond in silicon nitride and 1063cm-1(9.4μm) for Si-O bond in silicon oxide. The position of peak also shifts to a shorter wavelength when increasing the N2O/NH3 flow ratio. The infrared optical absorption properties of the silicon oxynitride films make them well suited for the absorber of uncooled microbolometer detectors","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125284141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Influence of MoO3 addition on the gasochromism of WO3 thin films 添加MoO3对WO3薄膜气相变色的影响
International Conference on Thin Film Physics and Applications Pub Date : 2010-10-11 DOI: 10.1117/12.888320
Zenghai Zhang, Guang-ming Wu, G. Gao, Jiandong Wu, W. Feng
{"title":"Influence of MoO3 addition on the gasochromism of WO3 thin films","authors":"Zenghai Zhang, Guang-ming Wu, G. Gao, Jiandong Wu, W. Feng","doi":"10.1117/12.888320","DOIUrl":"https://doi.org/10.1117/12.888320","url":null,"abstract":"Pure tungsten oxide thin films apparently show gasochromic performance, based on PdCl2 catalyst. In this paper, adulteration of MoO3 into WO3 sol has been achieved via sol-gel method. FT-IR, Differential Scanning Calorimeter (DSC-TG) and Uv-visible Spectroscopy have been used to analysis the compound sols, films and optical properties for the use of this material as smart windows. FT-IR shows that for the compound, new characteristic absorption bands arise, which is different from pure WO3 or MoO3. DSC-TG shows the phase change during the temperature ascending from 50 to 800°C. The compound thin films performs relatively well in coloring response time, colored extent, coloring-bleaching recycling and gasochromic effect with non-unicity color.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132312273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Optical and electrochemical properties of vanadium pentoxide porous film prepared by sol-gel technique 溶胶-凝胶法制备五氧化二钒多孔膜的光学和电化学性能
International Conference on Thin Film Physics and Applications Pub Date : 2010-10-11 DOI: 10.1117/12.888456
Shixiong She, Guang-ming Wu, Huiyu Yang, Jun Shen, G. Gao
{"title":"Optical and electrochemical properties of vanadium pentoxide porous film prepared by sol-gel technique","authors":"Shixiong She, Guang-ming Wu, Huiyu Yang, Jun Shen, G. Gao","doi":"10.1117/12.888456","DOIUrl":"https://doi.org/10.1117/12.888456","url":null,"abstract":"Thin films of V2O5, especially vanadium oxide films with nano- and micro-structures, perform well as cathode material for Li ion batteries and charge storage devices. Thin films of V2O5 with different porosity were obtained by dip-coating sol-gel technique. V2O5 sols were prepared by dissolution of V2O5 powder in benzyl alcohol and isopropyl alcohol in proper proportion. Optical property and porosity of films were characterized by FTIR and ellipsometer. Electrochemical characterization was recorded by chronopotentiometry(CP) and cyclic voltammetry(CV). Furthermore, the study shows that the porous structures of V2O5 films had an effect on the stability and reversibility of the films.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133510155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Preparation and Faraday rotation of Nd2O3 doped Fe2O3-SiO2 nano-composite films Nd2O3掺杂Fe2O3-SiO2纳米复合膜的制备及法拉第旋转
International Conference on Thin Film Physics and Applications Pub Date : 2010-10-11 DOI: 10.1117/12.888331
X. Fang, Lanfang Yao, Lin Li, Linlin Tian, Ruiqing Xu, Shuo Wang
{"title":"Preparation and Faraday rotation of Nd2O3 doped Fe2O3-SiO2 nano-composite films","authors":"X. Fang, Lanfang Yao, Lin Li, Linlin Tian, Ruiqing Xu, Shuo Wang","doi":"10.1117/12.888331","DOIUrl":"https://doi.org/10.1117/12.888331","url":null,"abstract":"Magneto-optic properties of magnetic materials have much influence on the performance of these current sensors. For practical using, it is generally demanded that the sensing materials had the good magneto-optic properties of large Faraday rotation. Among the most attractive properties of the transparent materials containing Fe2O3 are those related to the magneto-optical effects. The Sol-gel processes are extensively used for the preparation of optical or magneto-optical nano-composite materials though the incorporation of metal ions in the silica matrix. In this study, the Nd2O3 doped Fe2O3-SiO2 nano-composite films with different concentrations of Nd2O3, heated temperature and the number of layers were prepared by sol-gel method. The dependence of Faraday rotation angle of films is studied at room temperature. We find that appropriate concentrations of Nd2O3 (Nd/Si=0.011) doped has improved magneto-optic properties of higher Faraday rotation angle, the θF value increases with the decrease of the temperature below 500°C, the absolute value of Faraday rotation angle increases as the number of layers increases.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133562416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Introduction of Zr in Mg/Co nanometric periodic multilayers Mg/Co纳米周期多层膜中Zr的引入
International Conference on Thin Film Physics and Applications Pub Date : 2010-10-11 DOI: 10.1117/12.888193
K. Le Guen, Min-Hui Hu, J. Andre, P. Jonnard, Sika Zhou, Haochuan Li, Jingtao Zhu, Zhanshan Wang, N. Mahne, A. Giglia, S. Nannarone, C. Meny
{"title":"Introduction of Zr in Mg/Co nanometric periodic multilayers","authors":"K. Le Guen, Min-Hui Hu, J. Andre, P. Jonnard, Sika Zhou, Haochuan Li, Jingtao Zhu, Zhanshan Wang, N. Mahne, A. Giglia, S. Nannarone, C. Meny","doi":"10.1117/12.888193","DOIUrl":"https://doi.org/10.1117/12.888193","url":null,"abstract":"We study the introduction of Zr as a third material within a nanometric periodic Mg/Co structure designed to work as optical component in the EUV range. Mg/Co, Mg/Zr/Co, Mg/Co/Zr and Mg/Zr/Co/Zr multilayers are designed, then characterized in terms of structural quality and optical performances through X-ray and EUV reflectometry measurements respectively. For the Mg/Co/Zr structure, the reflectance value is reported to be 50% at 25.1 nm and 45° of grazing incidence. Nuclear Magnetic Resonance (NMR) measurements are performed to study the nearest neighbour local environment around the Co atoms.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130417844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Temperature dependence of photoluminescence, Raman scattering, and transmittance spectra of anatase Ti1-xFexO2 nanocrystalline films 锐钛矿Ti1-xFexO2纳米晶薄膜的光致发光、拉曼散射和透射光谱的温度依赖性
International Conference on Thin Film Physics and Applications Pub Date : 2010-10-11 DOI: 10.1117/12.888287
X. G. Chen, W. Li, Y. W. Li, J. Chu
{"title":"Temperature dependence of photoluminescence, Raman scattering, and transmittance spectra of anatase Ti1-xFexO2 nanocrystalline films","authors":"X. G. Chen, W. Li, Y. W. Li, J. Chu","doi":"10.1117/12.888287","DOIUrl":"https://doi.org/10.1117/12.888287","url":null,"abstract":"Anatase Ti1-xFexO2 (x=0, 1%, 2%) nanocrystalline films were prepared on quartz substrates by a facile nonhydrolytic sol-gel route. The structure and optical properties have been studied by X-ray diffraction (XRD), Raman scattering, transmittance spectra and temperature dependent photoluminescence (PL). The B1g, Eg and (A1g+B1g) modes of anatase phase TiO2 can be observed in Raman spectra. Dielectric functions have been extracted by fitting the transmittance spectra in the photon energy range of 0.5-6.5 eV with Adachi's model. The pure TiO2 film displays a strong broadening visible luminescence band; however, Fe-doped samples exhibit a very weak luminescence due to the increase of oxygen vacancy concentration in TiO2. With the temperature increases, the PL intensity decreases monotonously and there are five emission peaks for the pure sample in low temperatures, which could be attributed to oxygen vacancies, surface states and F+ center.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114745307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimization of triangle grating structures for light trapping in thin film silicon solar cells 薄膜硅太阳能电池捕光三角形光栅结构的优化
International Conference on Thin Film Physics and Applications Pub Date : 2010-10-11 DOI: 10.1117/12.887556
Leijie Ling, Yonggang Wu, Zihuan Xia, N. Chen, Zhenhua Wang
{"title":"Optimization of triangle grating structures for light trapping in thin film silicon solar cells","authors":"Leijie Ling, Yonggang Wu, Zihuan Xia, N. Chen, Zhenhua Wang","doi":"10.1117/12.887556","DOIUrl":"https://doi.org/10.1117/12.887556","url":null,"abstract":"The influence of different triangular grating shapes on the absorption performance of the thin-film silicon solar cell is discussed in this paper. A finite difference time domain method is used to make the numerical simulation. By studying the shape of the triangular grating, the designs of structure are optimized to achieve higher short circuit currents and quantum efficiencies. We find that the blaze grating structure is the ideal initial texture for thin-film solar cells. Compared with the triangular grating, the short circuit current of the blaze grating is improved by 7.09% for the entire spectrum. The short circuit current for the short wavelength is increased by 13.5% whereas the short circuit current in the red and infrared part of spectrum is increased by 86.5%.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115351635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Position-controlled formation of Si nanopores by chemical vapor deposition of SiC/SOI(100) 化学气相沉积SiC/SOI的位置控制形成Si纳米孔(100)
International Conference on Thin Film Physics and Applications Pub Date : 2010-10-11 DOI: 10.1117/12.888531
Y. Ikoma, H. Yahaya, H. Sakita, Yuta Nishino, T. Motooka
{"title":"Position-controlled formation of Si nanopores by chemical vapor deposition of SiC/SOI(100)","authors":"Y. Ikoma, H. Yahaya, H. Sakita, Yuta Nishino, T. Motooka","doi":"10.1117/12.888531","DOIUrl":"https://doi.org/10.1117/12.888531","url":null,"abstract":"We investigated the position-controlled nanopore formation in the surface of thin Si layer of a Silicon on Insulator (SOI) substrate by utilizing chemical vapor deposition (CVD). The Si membrane was obtained by anisotropic etching of the handle wafer. The SiC film growth was carried out from the backside surface by utilizing CH3SiH3 pulse jet CVD at the substrate temperature of 900 °C. Square pits with the sizes of ≤0.5 μm were observed on the Si membrane while no pit was formed on the top Si layer. This result indicates that the position of the nanopores on the top Si layer can be controlled without using SiO2 masks on the front side surface.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114781106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
CdTe thin film solar cell on flexible metallic substrate 柔性金属基板上的碲化镉薄膜太阳能电池
International Conference on Thin Film Physics and Applications Pub Date : 2010-10-11 DOI: 10.1117/12.888236
Q. Su, Dongming Li, W. Shi, Linjun Wang, Yiben Xia
{"title":"CdTe thin film solar cell on flexible metallic substrate","authors":"Q. Su, Dongming Li, W. Shi, Linjun Wang, Yiben Xia","doi":"10.1117/12.888236","DOIUrl":"https://doi.org/10.1117/12.888236","url":null,"abstract":"In this paper lightweight and flexible CdS/CdTe thin film solar cells on metallic substrates have been developed using a close spaced sublimation process with a low deposition temperature. The analysis of basic properties of CdS and CdTe thin films was carried out by SEM and XRD characterization techniques. The thin film solar cell devices were characterized by current- voltage and photocurrent techniques. Open circuit voltage (Voc) of 710 mV, short-circuit current density (Jsc) of 20.55 mA/cm2 and conversion efficiency of 9.04% was obtained for the flexible CdTe/CdS thin film solar cell under AM1.5 illumination.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126012622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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