{"title":"MOD法制备PLZT(8/65/35)薄膜的结构与电学性能","authors":"Jianqiang Luo, Weiguo Liu, Shun Zhou, Xiaotao Sun","doi":"10.1117/12.888385","DOIUrl":null,"url":null,"abstract":"Pyroelectric lead lanthanum zirconnate titanate (PbLa8Zr65Ti35) thin films were prepared by a metal-organic decomposition (MOD) method on Pt(111)/Ti/SiO2/Si(100) substrate. After annealing at different temperatures with the same annealing time, the amorphous films were transformed into polycrystalline PLZT films. The phase formation and surface microstructure were investigated by X-ray diffraction (XRD) and atom force microscopy (AFM). The XRD data showed the formation of pervoskite phase at 650°C and indicated suppression of pyrochlore phase as temperature increasing. The PLZT pyroelectric sensor was fabricated based on sensitive barrier layer instead of the other type barrier layer. Finally, dielectric and pyroelectric coefficients was also measured.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"96 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Structural and electrical properties of PLZT (8/65/35) thin films prepared by MOD method\",\"authors\":\"Jianqiang Luo, Weiguo Liu, Shun Zhou, Xiaotao Sun\",\"doi\":\"10.1117/12.888385\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Pyroelectric lead lanthanum zirconnate titanate (PbLa8Zr65Ti35) thin films were prepared by a metal-organic decomposition (MOD) method on Pt(111)/Ti/SiO2/Si(100) substrate. After annealing at different temperatures with the same annealing time, the amorphous films were transformed into polycrystalline PLZT films. The phase formation and surface microstructure were investigated by X-ray diffraction (XRD) and atom force microscopy (AFM). The XRD data showed the formation of pervoskite phase at 650°C and indicated suppression of pyrochlore phase as temperature increasing. The PLZT pyroelectric sensor was fabricated based on sensitive barrier layer instead of the other type barrier layer. Finally, dielectric and pyroelectric coefficients was also measured.\",\"PeriodicalId\":316559,\"journal\":{\"name\":\"International Conference on Thin Film Physics and Applications\",\"volume\":\"96 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-10-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Thin Film Physics and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.888385\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Thin Film Physics and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.888385","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Structural and electrical properties of PLZT (8/65/35) thin films prepared by MOD method
Pyroelectric lead lanthanum zirconnate titanate (PbLa8Zr65Ti35) thin films were prepared by a metal-organic decomposition (MOD) method on Pt(111)/Ti/SiO2/Si(100) substrate. After annealing at different temperatures with the same annealing time, the amorphous films were transformed into polycrystalline PLZT films. The phase formation and surface microstructure were investigated by X-ray diffraction (XRD) and atom force microscopy (AFM). The XRD data showed the formation of pervoskite phase at 650°C and indicated suppression of pyrochlore phase as temperature increasing. The PLZT pyroelectric sensor was fabricated based on sensitive barrier layer instead of the other type barrier layer. Finally, dielectric and pyroelectric coefficients was also measured.