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Ultraviolet-to-infrared dual-band detectors based on quantum dot and heterojunction structures 基于量子点和异质结结构的紫外-红外双波段探测器
International Conference on Thin Film Physics and Applications Pub Date : 2008-03-11 DOI: 10.1117/12.792385
A. Perera
{"title":"Ultraviolet-to-infrared dual-band detectors based on quantum dot and heterojunction structures","authors":"A. Perera","doi":"10.1117/12.792385","DOIUrl":"https://doi.org/10.1117/12.792385","url":null,"abstract":"Tunneling quantum dot photodetector (T-QDIP) structures designed for multi-band infrared and heterojunction detectors for ultraviolet (UV) to infrared (IR) radiation detection are presented. In T-QDIPs, photoabsorption takes place in InGaAs QDs due to intersubband transitions of carriers. Photoexcited carriers are selectively collected through resonant tunneling, while the dark current is blocked by AlGaAs/InGaAs tunneling barriers. This approach to block dark current without reducing photocurrent was observed in a detector responding at ~ 6 and ~ 17 μm up to 300 K. In addition, UV/IR dual-band detectors were developed based on GaN/AlGaN Heterojunction Interfacial Workfunction Internal Photoemission (HEIWIP) structures. A typical HEIWIP detector structure consists of a single (or series of) doped emitter(s) followed by an undoped barrier(s) between two highly doped contact layers. Reported UV/IR structures use n-doped GaN emitters and AlxGa1-xN barriers. The UV response is due to interband (valence-to-conduction) transitions in the undoped AlGaN barrier, while the IR response arises from intraband transitions in the n-doped GaN emitter. Preliminary detectors were successfully demonstrated with a 360 nm threshold UV response up to 300 K and 8-14 μm IR response up to 80 K.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130928250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparative NH3-sensing characteristic studies of PANI/TiO2 nanocomposite thin films doped with different acids 不同酸掺杂PANI/TiO2纳米复合薄膜nh3传感特性的比较研究
International Conference on Thin Film Physics and Applications Pub Date : 2008-03-11 DOI: 10.1117/12.792243
H. Tai, Yadong Jiang, G. Xie, Junsheng Yu, Z. Ying, Xuan Chen
{"title":"Comparative NH3-sensing characteristic studies of PANI/TiO2 nanocomposite thin films doped with different acids","authors":"H. Tai, Yadong Jiang, G. Xie, Junsheng Yu, Z. Ying, Xuan Chen","doi":"10.1117/12.792243","DOIUrl":"https://doi.org/10.1117/12.792243","url":null,"abstract":"Polyaniline/titanium dioxide (PANI/TiO2) nanocomposite thin films were synthesized by in-situ self-assembly method, which were doped with p-toluene sulphonic acid (p-TSA) and hydrochloric acid (HCl), respectively. The thin films were characterized by using UV-Vis absorption spectroscopy and scanning electron microscope (SEM), and the NH3 gas sensitive properties of the thin films were investigated at room temperature. The results showed that the PANI/TiO2 thin film doped with HCl was superior to that doped with p-TSA in terms of response-recovery characteristics. The surface morphology characterization of the thin films were performed to explain the different gas-sensing properties.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126603899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ohmic contacts with heterojunction structure to N-type 4H-silicon carbide by N+ polysilicon film 用N+多晶硅薄膜制备具有异质结结构的N型4h碳化硅欧姆触点
International Conference on Thin Film Physics and Applications Pub Date : 2008-03-11 DOI: 10.1117/12.792192
Hui Guo, Qian Feng, D. Qiao, Yuming Zhang, Yimen Zhang
{"title":"Ohmic contacts with heterojunction structure to N-type 4H-silicon carbide by N+ polysilicon film","authors":"Hui Guo, Qian Feng, D. Qiao, Yuming Zhang, Yimen Zhang","doi":"10.1117/12.792192","DOIUrl":"https://doi.org/10.1117/12.792192","url":null,"abstract":"The polysilicon ohmic contacts to n-type 4H-SiC have been fabricated. TLM (Transfer Length Method) test patterns with polysilicon structure are formed on N-wells created by phosphorus ion (P+) implantation into Si-faced p-type 4H-SiC epilayer. The polysilicon is deposited using low-pressure chemical vapor deposition (LPCVD) and doped by phosphorous ions implantation followed by diffusion to obtain a sheet resistance of 22Ω/square The specific contact resistance ρc of n+ polysilicon contact to n-type 4H-SiC as low as 3.82×10-5Ωcm2 is achieved. The result for sheet resistance Rsh of the P+ implanted layers in SiC is about 4.9kΩ/square. The mechanisms for n+ polysilicon ohmic contact to ntype SiC are discussed.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"787 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117032878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ellipsometric study of CVD diamond films prepared with various grain sizes 不同晶粒尺寸CVD金刚石薄膜的椭偏研究
International Conference on Thin Film Physics and Applications Pub Date : 2008-03-11 DOI: 10.1117/12.792395
Yanyan Lou, Linjun Wang, Hong-liang Ma, H. Deng, B. Lu, Yiben Xia
{"title":"Ellipsometric study of CVD diamond films prepared with various grain sizes","authors":"Yanyan Lou, Linjun Wang, Hong-liang Ma, H. Deng, B. Lu, Yiben Xia","doi":"10.1117/12.792395","DOIUrl":"https://doi.org/10.1117/12.792395","url":null,"abstract":"Diamond films with various grain sizes are grown on silicon substrates by hot-filament chemical vapor deposition method. Scanning electron microscopy (SEM) measurement shows that the films consist of diamond grain with an average crystallite size of 1.4-0.1μm. The optical and structural properties of diamond films are investigated by spectroscopic phase modulated ellipsometer in the energy range of 0.8-1.5eV. A three-layer model, Si/diamond film/diamond film + void/, is applied to diamond film based on Bruggeman effective-medium approximation and New Amorphous dispersion formula which is a rewrite of Forouhi-Bloomer formulation. By fitting spectroscopic characteristics (Ψ,Δ) with Levenberg-Marquardt regression algorithm, the energy band gap and refractive index are obtained, along with the film thickness, bulk void fraction and roughness layer. The study indicates that both energy band gap and refractive index decrease when grain size reduces due to the raise of disorder sp2 bonded carbon. The result on the Raman scattering measurement is consistent with the fitting result of spectroscopic ellipsometer.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115443406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fabrication and characterization of 3D pn junction structure for radiation detection 用于辐射探测的三维pn结结构的制备和表征
International Conference on Thin Film Physics and Applications Pub Date : 2008-03-11 DOI: 10.1117/12.792237
Tingting Liu, Tao-Chun Liu, Jinlong Li, Jilei Lin, Xiaoming Chen, XingLong Guo, Peisheng Xin, Shaohui Xu, Weijia Xue, Lianwei Wang
{"title":"Fabrication and characterization of 3D pn junction structure for radiation detection","authors":"Tingting Liu, Tao-Chun Liu, Jinlong Li, Jilei Lin, Xiaoming Chen, XingLong Guo, Peisheng Xin, Shaohui Xu, Weijia Xue, Lianwei Wang","doi":"10.1117/12.792237","DOIUrl":"https://doi.org/10.1117/12.792237","url":null,"abstract":"In this report, p-type macroporous silicon has been prepared by anodization. A phosphorus diffusion step is employed for the formation of three dimensional pn junction structures on this macroporous silicon. I-V and C-V measurement were employed to characterize the electrical properties. The results were compared with numeric simulation with T-SUPREM4 and MEDICI. It has been demonstrated that three-dimensional structure can increase the effective junction area and the collective efficiency remarkably, and hence improve the performance of semiconductor radiation detector.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121561983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Fabrication kinetics and properties of Ni-based nano-arrays embedded in anodic Al2O3 film ni基纳米阵列在阳极Al2O3薄膜中的制备动力学和性能
International Conference on Thin Film Physics and Applications Pub Date : 2008-03-11 DOI: 10.1117/12.792020
Hao Yan, Jian-cheng Zhang, C. You, Z. Song, B. Yu, Yue Shen
{"title":"Fabrication kinetics and properties of Ni-based nano-arrays embedded in anodic Al2O3 film","authors":"Hao Yan, Jian-cheng Zhang, C. You, Z. Song, B. Yu, Yue Shen","doi":"10.1117/12.792020","DOIUrl":"https://doi.org/10.1117/12.792020","url":null,"abstract":"By direct current electrodeposition technique combined with the anodic aluminum oxide films, Ni-based nano-arrays were successfully performed. The structure was studied by X-ray diffraction and high-resolution transmission electron microscopy with selected-area electron diffraction. Energy dispersive spectroscopy was used to prove the composition of the prepared nanowires. The magnetic property curves of Ni-based nano-arrays were measured by a physical property measurement system. According to electrochemical analysis, the growth kinetics of the nanowires was studied by determining the relationship between the current and time under different parameters, such as electrolyte temperature and electrodeposition voltage.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115756331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study on the photoinduced current in nematic liquid crystal cell with alkanethiol self-assembled monolayer 烷硫醇自组装单层向列液晶电池的光致电流研究
International Conference on Thin Film Physics and Applications Pub Date : 2008-03-11 DOI: 10.1117/12.792163
F. Yao, Y. Pei, Xiu-Dong Sun
{"title":"Study on the photoinduced current in nematic liquid crystal cell with alkanethiol self-assembled monolayer","authors":"F. Yao, Y. Pei, Xiu-Dong Sun","doi":"10.1117/12.792163","DOIUrl":"https://doi.org/10.1117/12.792163","url":null,"abstract":"In this paper we constructed nematic liquid crystal (NLC) cells with the gold film as one substrate as well as the cells with the gold film covered with decanethiol and hexadecanethiol self-assembled monolayers (SAMs). We found the photocurrents in these three kinds of cells all increased linearly with the power of the 632.8nm illuminating beam. And the existence of alkanethiol SAM or application a high voltage could enhance the growth rate of the above linear relations. These indicated that the current originated from the light induced carrier injection from the gold electrode to NLC film, and a model of photocurrent limited by near-electrode excitons was introduced to explain the photoinduced carrier injection.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122181551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Epitaxial growth and electrical properties of Ba0.6Sr0.4TiO3 thin films with conductive La0.5Sr0.5CoO3 bottom electrodes 具有导电底电极La0.5Sr0.5CoO3的Ba0.6Sr0.4TiO3薄膜的外延生长和电学性能
International Conference on Thin Film Physics and Applications Pub Date : 2008-03-11 DOI: 10.1117/12.792276
W. Qin, J. Xiong, J. Zhu, J. Tang, W. Luo, X. H. Wei, Y. Zhang, Y. Li
{"title":"Epitaxial growth and electrical properties of Ba0.6Sr0.4TiO3 thin films with conductive La0.5Sr0.5CoO3 bottom electrodes","authors":"W. Qin, J. Xiong, J. Zhu, J. Tang, W. Luo, X. H. Wei, Y. Zhang, Y. Li","doi":"10.1117/12.792276","DOIUrl":"https://doi.org/10.1117/12.792276","url":null,"abstract":"Epitaxial Ba0.6Sr0.4TiO3 (BST) thin films were deposited on LaAlO3 (LAO) substrates with the conductive metallic oxide La0.5Sr0.5CoO3 (LSCO) film as a bottom electrode by pulsed laser deposition (PLD). X-ray diffraction θ~2θ and Φ scan showed that the epitaxial relationship of BST /LSCO /LAO was [001] BST//[001] LSCO//[001] LAO. The atomic force microscope (AFM) revealed a smooth and crack-free surface of BST films on LSCO-coated LAO substrate with the average grain size of 120 nm and the RMS of 1.564nm for BST films. Pt/BST/LSCO capacitor was fabricated to perform Capacitance-Voltage measurement indicating good insulating characteristics. For epitaxial BST film, the dielectric constant and dielectric loss were determined as 471 and 0.03, respectively. The tunabilty was 79.59% and the leakage current was 2.63×10-7 A/cm2 under an applied filed of 200 kV/cm.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132556842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photon upconversion devices for imaging 成像用光子上转换装置
International Conference on Thin Film Physics and Applications Pub Date : 2008-03-11 DOI: 10.1117/12.792384
H. Liu, H. Luo, D. Ban, M. Buchanan, Z. Wasilewski, A. Springthorpe, P. Poole
{"title":"Photon upconversion devices for imaging","authors":"H. Liu, H. Luo, D. Ban, M. Buchanan, Z. Wasilewski, A. Springthorpe, P. Poole","doi":"10.1117/12.792384","DOIUrl":"https://doi.org/10.1117/12.792384","url":null,"abstract":"This paper reviews our research on photon upconversion devices for wavelengths from 1.5 μm to 0.87 μm. The 1.5 μm is chosen for its importance for eye-safe active imaging; whereas 0.87 μm corresponds to the bandgap of GaAs which is the active region of our high efficiency light emitting diode (LED). The basic idea is to integrate a 1.5 μm detector with a 0.87 µm LED, connected in series. The detected photocurrent drives the LED, thereby achieving the upconversion. Various approaches of integration methods and device designs have been tested. The upconversion approach provides an alternative to the standard hybrid integration with readout circuits and may be advantageous for some applications.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"186 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114536520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Coherent amplification by multilayer nematic liquid crystal cell 多层向列液晶池相干放大
International Conference on Thin Film Physics and Applications Pub Date : 2008-03-11 DOI: 10.1117/12.792158
Xiu-Dong Sun, Y. Pei, F. Yao
{"title":"Coherent amplification by multilayer nematic liquid crystal cell","authors":"Xiu-Dong Sun, Y. Pei, F. Yao","doi":"10.1117/12.792158","DOIUrl":"https://doi.org/10.1117/12.792158","url":null,"abstract":"Beam coupling theory for the nonlocal Raman-Nath gratings was developed, which showed that the gain initially increased exponentially with the sample thickness, then deviated from the exponential relation and lowered gradually. It was predicted that large thickness and high intensity sensitivity were simultaneously necessary for the sample to obtain larger gain. The quantitative relation between the signal gain and the sample thickness was investigated experimentally by using a multilayer photorefractive liquid crystal structure to increase the overall interaction length, and the experimental result fitted the theory nicely.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129806872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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