W. Qin, J. Xiong, J. Zhu, J. Tang, W. Luo, X. H. Wei, Y. Zhang, Y. Li
{"title":"Epitaxial growth and electrical properties of Ba0.6Sr0.4TiO3 thin films with conductive La0.5Sr0.5CoO3 bottom electrodes","authors":"W. Qin, J. Xiong, J. Zhu, J. Tang, W. Luo, X. H. Wei, Y. Zhang, Y. Li","doi":"10.1117/12.792276","DOIUrl":null,"url":null,"abstract":"Epitaxial Ba0.6Sr0.4TiO3 (BST) thin films were deposited on LaAlO3 (LAO) substrates with the conductive metallic oxide La0.5Sr0.5CoO3 (LSCO) film as a bottom electrode by pulsed laser deposition (PLD). X-ray diffraction θ~2θ and Φ scan showed that the epitaxial relationship of BST /LSCO /LAO was [001] BST//[001] LSCO//[001] LAO. The atomic force microscope (AFM) revealed a smooth and crack-free surface of BST films on LSCO-coated LAO substrate with the average grain size of 120 nm and the RMS of 1.564nm for BST films. Pt/BST/LSCO capacitor was fabricated to perform Capacitance-Voltage measurement indicating good insulating characteristics. For epitaxial BST film, the dielectric constant and dielectric loss were determined as 471 and 0.03, respectively. The tunabilty was 79.59% and the leakage current was 2.63×10-7 A/cm2 under an applied filed of 200 kV/cm.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Thin Film Physics and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.792276","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Epitaxial Ba0.6Sr0.4TiO3 (BST) thin films were deposited on LaAlO3 (LAO) substrates with the conductive metallic oxide La0.5Sr0.5CoO3 (LSCO) film as a bottom electrode by pulsed laser deposition (PLD). X-ray diffraction θ~2θ and Φ scan showed that the epitaxial relationship of BST /LSCO /LAO was [001] BST//[001] LSCO//[001] LAO. The atomic force microscope (AFM) revealed a smooth and crack-free surface of BST films on LSCO-coated LAO substrate with the average grain size of 120 nm and the RMS of 1.564nm for BST films. Pt/BST/LSCO capacitor was fabricated to perform Capacitance-Voltage measurement indicating good insulating characteristics. For epitaxial BST film, the dielectric constant and dielectric loss were determined as 471 and 0.03, respectively. The tunabilty was 79.59% and the leakage current was 2.63×10-7 A/cm2 under an applied filed of 200 kV/cm.