Fabrication and characterization of 3D pn junction structure for radiation detection

Abstract

In this report, p-type macroporous silicon has been prepared by anodization. A phosphorus diffusion step is employed for the formation of three dimensional pn junction structures on this macroporous silicon. I-V and C-V measurement were employed to characterize the electrical properties. The results were compared with numeric simulation with T-SUPREM4 and MEDICI. It has been demonstrated that three-dimensional structure can increase the effective junction area and the collective efficiency remarkably, and hence improve the performance of semiconductor radiation detector.