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2012 IEEE International SOI Conference (SOI)最新文献

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Combined effect of mechanical stressors and channel orientation on mobility in FDSOI n and p MOSFETs 机械应力源和通道取向对FDSOI n和p mosfet迁移率的综合影响
2012 IEEE International SOI Conference (SOI) Pub Date : 2012-10-01 DOI: 10.1109/SOI.2012.6404380
F. Gámiz, L. Donetti, N. Rodriguez, C. Sampedro, O. Faynot, J. Barbe
{"title":"Combined effect of mechanical stressors and channel orientation on mobility in FDSOI n and p MOSFETs","authors":"F. Gámiz, L. Donetti, N. Rodriguez, C. Sampedro, O. Faynot, J. Barbe","doi":"10.1109/SOI.2012.6404380","DOIUrl":"https://doi.org/10.1109/SOI.2012.6404380","url":null,"abstract":"We have calculated the combined effect of biaxial and uniaxial strain in FDSOI MOSFETs for different channel orientations using a comprehensive Monte Carlo simulator. Our results confirm that tensile uniaxial strain improves the electron mobility of sSOI channels, with low impact of channel orientation, or silicon thickness, i.e., biaxial and uniaxial strains have cumulative effects. In the case of holes, the effect of compressive uniaxial strain strongly depends on the channel orientation and on the Ge mole fraction of the sSOI channel: for low xGe, compressive uniaxial strain enhances the hole mobility (cumulative effects); for high xGe, compressive uniaxial strain cancels the mobility enhancement achieved by the biaxial strain.","PeriodicalId":306839,"journal":{"name":"2012 IEEE International SOI Conference (SOI)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114775270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Resonant Body Transistors in IBM's 32nm SOI CMOS technology 采用IBM 32nm SOI CMOS技术的谐振体晶体管
2012 IEEE International SOI Conference (SOI) Pub Date : 2012-10-01 DOI: 10.1109/SOI.2012.6404400
R. Marathe, W. Wang, Z. Mahmood, L. Daniel, D. Weinstein
{"title":"Resonant Body Transistors in IBM's 32nm SOI CMOS technology","authors":"R. Marathe, W. Wang, Z. Mahmood, L. Daniel, D. Weinstein","doi":"10.1109/SOI.2012.6404400","DOIUrl":"https://doi.org/10.1109/SOI.2012.6404400","url":null,"abstract":"This work presents an unreleased CMOS-integrated MEMS resonators fabricated at the transistor level of IBM's 32SOI technology and realized without the need for any post-processing or packaging. These Resonant Body Transistors (RBTs) are driven capacitively and sensed piezoresistively using an n-channel Field Effect Transistor (nFET). Acoustic Bragg Reflectors (ABRs) are used to localize acoustic vibrations in these resonators completely buried in the CMOS stack and surrounded by low-k dielectric. Experimental results from the first generation hybrid CMOS-MEMS show RBTs operating at 11.1-11.5 GHz with footprints <; 5μm × 3μm. The response of active resonators is shown to contrast with passive resonators showing no discernible peak. Comparative behavior of devices with design variations is used to demonstrate the effect of ABRs on spurious mode suppression. Temperature stability and TCF compensation due to complimentary materials in the CMOS stack are experimentally verified.","PeriodicalId":306839,"journal":{"name":"2012 IEEE International SOI Conference (SOI)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130979359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Simply fundamental innovation for complex technology challenges — Case of smarttools 简单的基本创新复杂的技术挑战-智能工具的案例
2012 IEEE International SOI Conference (SOI) Pub Date : 2012-10-01 DOI: 10.1109/SOI.2012.6404358
J. Wang
{"title":"Simply fundamental innovation for complex technology challenges — Case of smarttools","authors":"J. Wang","doi":"10.1109/SOI.2012.6404358","DOIUrl":"https://doi.org/10.1109/SOI.2012.6404358","url":null,"abstract":"Energy efficiency, performance and cost are major challenges facing the electronic, solar energy, and lighting industries. We will look at how fundamental innovations in engineered substrates from Soitec can solve complex technology challenges and enable paradigm shifts in support of customers' success.","PeriodicalId":306839,"journal":{"name":"2012 IEEE International SOI Conference (SOI)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132326776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
28nm FDSOI offer for academia and industry 28nm FDSOI为学术界和工业界提供
2012 IEEE International SOI Conference (SOI) Pub Date : 2012-10-01 DOI: 10.1109/SOI.2012.6404351
K. Torki
{"title":"28nm FDSOI offer for academia and industry","authors":"K. Torki","doi":"10.1109/SOI.2012.6404351","DOIUrl":"https://doi.org/10.1109/SOI.2012.6404351","url":null,"abstract":"□ CMP created in 1981 □ Offering industrial quality process lines (University process lines cannot offer a stable yield) □ Design-kits linking CAD and processes, to facilitate the design. □ Customer base development + Universities / Research Labs + Industry + 1000 Institutions in 70 countries □ Non-profit, Non-sponsored.","PeriodicalId":306839,"journal":{"name":"2012 IEEE International SOI Conference (SOI)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131015195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Evaluation of sSOI wafers for 22nm node and beyond 22nm及以上节点sSOI晶圆的评估
2012 IEEE International SOI Conference (SOI) Pub Date : 2012-10-01 DOI: 10.1109/SOI.2012.6404397
F. Allibert, K. Cheng, M. Vinet, W. Schwarzenbach, A. Khakifirooz, L. Ecarnot, B. Nguyen, B. Doris
{"title":"Evaluation of sSOI wafers for 22nm node and beyond","authors":"F. Allibert, K. Cheng, M. Vinet, W. Schwarzenbach, A. Khakifirooz, L. Ecarnot, B. Nguyen, B. Doris","doi":"10.1109/SOI.2012.6404397","DOIUrl":"https://doi.org/10.1109/SOI.2012.6404397","url":null,"abstract":"We assessed the performance of planar fully-depleted transistors built on sSOI wafers by comparing them to devices fabricated with the same process on SOI. A 23% increase in device performance was demonstrated, while maintaining at least as good device electrostatics and matching as SOI.","PeriodicalId":306839,"journal":{"name":"2012 IEEE International SOI Conference (SOI)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134455754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Ground plane optimization for 20nm FDSOI transistors with thin Buried Oxide 薄埋氧化物20nm FDSOI晶体管的地平面优化
2012 IEEE International SOI Conference (SOI) Pub Date : 2012-10-01 DOI: 10.1109/SOI.2012.6404363
L. Grenouillet, P. Khare, J. Gimbert, M. Hargrove, M. Jaud, Q. Liu, Y. Le Tiec, R. Wacquez, N. Loubet, K. Cheng, S. Holmes, S. Liu, T. Hook, S. Teehan, J. Guilford, S. Schmitz, P. Kulkarni, J. Kuss, M. Terrizzi, S. Luning, B. Doris, M. Vinet
{"title":"Ground plane optimization for 20nm FDSOI transistors with thin Buried Oxide","authors":"L. Grenouillet, P. Khare, J. Gimbert, M. Hargrove, M. Jaud, Q. Liu, Y. Le Tiec, R. Wacquez, N. Loubet, K. Cheng, S. Holmes, S. Liu, T. Hook, S. Teehan, J. Guilford, S. Schmitz, P. Kulkarni, J. Kuss, M. Terrizzi, S. Luning, B. Doris, M. Vinet","doi":"10.1109/SOI.2012.6404363","DOIUrl":"https://doi.org/10.1109/SOI.2012.6404363","url":null,"abstract":"Planar fully depleted (FD) devices with thin Buried Oxide (BOX) offer the unique ability to incorporate effective back biasing which is a key enabler to build a versatile multi-Vt technology. From a dynamic standpoint, forward back bias lowers Vt and thus boost device performance, whereas reverse back bias increases Vt and thus decreases leakage. From a static point of view the back gate allows fine Vt tuning. Here we propose and evaluate a back gate implant scheme that enables a full use of the back bias.","PeriodicalId":306839,"journal":{"name":"2012 IEEE International SOI Conference (SOI)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134479924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Effectiveness of strained-Si technology for thin-body MOSFETs 应变硅技术在薄体mosfet中的有效性
2012 IEEE International SOI Conference (SOI) Pub Date : 2012-10-01 DOI: 10.1109/SOI.2012.6404369
N. Xu, C. Shin, F. Andrieu, B. Ho, W. Xiong, O. Weber, T. Poiroux, B. Nguyen, Munkang Choi, V. Moroz, O. Faynot, T. Liu
{"title":"Effectiveness of strained-Si technology for thin-body MOSFETs","authors":"N. Xu, C. Shin, F. Andrieu, B. Ho, W. Xiong, O. Weber, T. Poiroux, B. Nguyen, Munkang Choi, V. Moroz, O. Faynot, T. Liu","doi":"10.1109/SOI.2012.6404369","DOIUrl":"https://doi.org/10.1109/SOI.2012.6404369","url":null,"abstract":"Strain-induced mobility enhancement in thin-body MOSFETs is studied and the impact of silicon body thickness scaling on piezoresistance coefficients is analyzed to facilitate stress engineering for these advanced transistor structures. Various stressors are benchmarked in terms of their effectiveness to enhance nanometer-gate-length thin-body MOSFET performance.","PeriodicalId":306839,"journal":{"name":"2012 IEEE International SOI Conference (SOI)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115458202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Innovative capacitorless SOI DRAMs 创新的无电容SOI dram
2012 IEEE International SOI Conference (SOI) Pub Date : 2012-10-01 DOI: 10.1109/SOI.2012.6404391
S. Cristoloveanu, M. Bawedin, J. Wan, S. Chang, C. Navarro, A. Zaslavsky, C. Le Royer, F. Andrieu, N. Rodriguez, F. Gámiz
{"title":"Innovative capacitorless SOI DRAMs","authors":"S. Cristoloveanu, M. Bawedin, J. Wan, S. Chang, C. Navarro, A. Zaslavsky, C. Le Royer, F. Andrieu, N. Rodriguez, F. Gámiz","doi":"10.1109/SOI.2012.6404391","DOIUrl":"https://doi.org/10.1109/SOI.2012.6404391","url":null,"abstract":"While the scaling of MOS transistors is still ongoing, the miniaturization of the DRAM storage capacitor is reaching a critical limit. A promising solution consists of eliminating the capacitor. Instead, the charges can be stored in the floating body of an SOI MOSFET, which is also used to read out the memory states. The floating-body 1T-DRAM takes advantage of floating-body and coupling effects that are usually regarded as parasitic phenomena.","PeriodicalId":306839,"journal":{"name":"2012 IEEE International SOI Conference (SOI)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123288750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Taking the next step on advanced HKMG SOI technologies — From 32nm PD SOI volume production to 28nm FD SOI and beyond 在先进的HKMG SOI技术上迈出下一步-从32nm PD SOI量产到28nm FD SOI及以上
2012 IEEE International SOI Conference (SOI) Pub Date : 2012-10-01 DOI: 10.1109/SOI.2012.6404364
M. Horstmann, J. Hoentschel, J. Schaeffer
{"title":"Taking the next step on advanced HKMG SOI technologies — From 32nm PD SOI volume production to 28nm FD SOI and beyond","authors":"M. Horstmann, J. Hoentschel, J. Schaeffer","doi":"10.1109/SOI.2012.6404364","DOIUrl":"https://doi.org/10.1109/SOI.2012.6404364","url":null,"abstract":"A foundry's mission is to deliver competitive device performance and flexibility to support a variety of SoC offerings. The restrictive lithography and process requirements at the 20nm technology limit harvesting the density and scaling benefits of the gate first approach and drive the concept change to gate last processing. This technology pushes conventional scaling to its challenging limits. Beyond 20nm new device concepts need to be employed where FinFETs and ET-SOI devices serving well candidates for new advanced CMOS technologies.","PeriodicalId":306839,"journal":{"name":"2012 IEEE International SOI Conference (SOI)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130839488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Radiation hardness aspects of advanced FinFET and UTBOX devices 先进FinFET和UTBOX器件的辐射硬度方面
2012 IEEE International SOI Conference (SOI) Pub Date : 1900-01-01 DOI: 10.1109/SOI.2012.6404372
C. Claeys, M. Aoulaiche, E. Simoen, A. Griffoni, D. Kobayashi, N. Mahatme, R. Reed, peixiong zhao, P. Agopian, J. Martino
{"title":"Radiation hardness aspects of advanced FinFET and UTBOX devices","authors":"C. Claeys, M. Aoulaiche, E. Simoen, A. Griffoni, D. Kobayashi, N. Mahatme, R. Reed, peixiong zhao, P. Agopian, J. Martino","doi":"10.1109/SOI.2012.6404372","DOIUrl":"https://doi.org/10.1109/SOI.2012.6404372","url":null,"abstract":"The stringent requirements imposed by the ITRS rely on the introduction of alternative and/or new gate concepts and the implementation of advanced processing modules and materials[1]. During the last decade, alternative gate concepts, with an evolution from planar single gate to double gate, multi-gate FET (MugFET) or FinFET, and gate-all-around (GAA) or nanowire concepts have been extensively studied [2]. Although manufacturing issues have delayed their introduction in production lines, FinFET and MuGFET structures are presently being used for 22 nm technologies. The use of SOI devices leads to an improved radiation performance concerning single event upsets and latch-up [3], but can become worse for micro-dose effects and from a total ionizing dose point of view because of the radiation-induced interface states and trapped charge in the buried oxide [4].","PeriodicalId":306839,"journal":{"name":"2012 IEEE International SOI Conference (SOI)","volume":"95 12","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113960761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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