Taking the next step on advanced HKMG SOI technologies — From 32nm PD SOI volume production to 28nm FD SOI and beyond

M. Horstmann, J. Hoentschel, J. Schaeffer
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引用次数: 1

Abstract

A foundry's mission is to deliver competitive device performance and flexibility to support a variety of SoC offerings. The restrictive lithography and process requirements at the 20nm technology limit harvesting the density and scaling benefits of the gate first approach and drive the concept change to gate last processing. This technology pushes conventional scaling to its challenging limits. Beyond 20nm new device concepts need to be employed where FinFETs and ET-SOI devices serving well candidates for new advanced CMOS technologies.
在先进的HKMG SOI技术上迈出下一步-从32nm PD SOI量产到28nm FD SOI及以上
晶圆代工厂的使命是提供具有竞争力的设备性能和灵活性,以支持各种SoC产品。20nm技术的限制性光刻和工艺要求限制了捕获栅极优先方法的密度和缩放优势,并推动了概念向栅极最后处理的转变。这项技术将传统的规模扩展推向了具有挑战性的极限。需要采用20nm以上的新器件概念,其中finfet和ET-SOI器件为新的先进CMOS技术提供了良好的候选者。
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