22nm及以上节点sSOI晶圆的评估

2012 IEEE International SOI Conference (SOI) Pub Date : 2012-10-01 DOI:10.1109/SOI.2012.6404397

F. Allibert, K. Cheng, M. Vinet, W. Schwarzenbach, A. Khakifirooz, L. Ecarnot, B. Nguyen, B. Doris

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引用次数: 3

摘要

我们通过将sSOI晶圆上的平面全耗尽晶体管与在SOI晶圆上采用相同工艺制造的器件进行比较，评估了它们的性能。在保持至少与SOI一样好的设备静电和匹配的同时，设备性能提高了23%。

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Evaluation of sSOI wafers for 22nm node and beyond

We assessed the performance of planar fully-depleted transistors built on sSOI wafers by comparing them to devices fabricated with the same process on SOI. A 23% increase in device performance was demonstrated, while maintaining at least as good device electrostatics and matching as SOI.

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2012 IEEE International SOI Conference (SOI)

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