S. Cristoloveanu, M. Bawedin, J. Wan, S. Chang, C. Navarro, A. Zaslavsky, C. Le Royer, F. Andrieu, N. Rodriguez, F. Gámiz
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While the scaling of MOS transistors is still ongoing, the miniaturization of the DRAM storage capacitor is reaching a critical limit. A promising solution consists of eliminating the capacitor. Instead, the charges can be stored in the floating body of an SOI MOSFET, which is also used to read out the memory states. The floating-body 1T-DRAM takes advantage of floating-body and coupling effects that are usually regarded as parasitic phenomena.
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