63rd Device Research Conference Digest, 2005. DRC '05.最新文献_第7页

A novel tunable wet etched mid-IR pentenary AIInGaAsSb junction laser at 2.34-2.44 /spl mu/m 一种新型可调谐湿蚀刻中红外五线AIInGaAsSb结激光器，功率为2.34-2.44 /spl mu/m

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI: 10.1109/DRC.2005.1553035

R. Bugge, B. Fimland

引用次数: 1

Vertical-structured Ni/n-GaN schottky diode with electroplating nickel substrate 电镀镍衬底的垂直结构Ni/n-GaN肖特基二极管

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI: 10.1109/DRC.2005.1553054

Shui-Jinn Wang, Shun-Cheng Chang, K. Uang, B. Liou

引用次数: 2

Self-aligned TiSi/sub 2/Si hetero-nanocrystal nonvolatile memory 自对准TiSi/ sub2 /Si异质纳米晶非易失性存储器

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI: 10.1109/DRC.2005.1553075

Yan Zhu, D. Zhao, Ruigang Li, Jianlin Liu

引用次数: 0

AlGaN/GaN HEMTs with an InGaN-based back-barrier 基于ingan后屏障的AlGaN/GaN hemt

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI: 10.1109/DRC.2005.1553111

T. Palacios, A. Chakraborty, S. Keller, S. Denbaars, U. Mishra

引用次数: 7

Organic semiconductor strain sensors 有机半导体应变传感器

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI: 10.1109/DRC.2005.1553097

Soyoun Jung, T. Jackson

引用次数: 10

Power dissipation in clocked quantum-dot cellular automata circuits 时钟量子点元胞自动机电路的功耗

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI: 10.1109/DRC.2005.1553086

Mo Liu, C. Lent

引用次数: 11

Circularly polarized light emission from microcavity light emitting devices based on sculptured chiral reflectors 基于雕刻手性反射器的微腔发光器件的圆偏振光发射

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI: 10.1109/DRC.2005.1553058

Jian Xu, A. Lakhtakia, J. Liou, D. Cui, M. Gerhold

引用次数: 0

Small-signal intrinsic base resistance effect on InP-InGaAs, InGaP-GaAs and SiGe HBTs InP-InGaAs、InGaP-GaAs和SiGe hbt的小信号本征基极电阻效应

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI: 10.1109/DRC.2005.1553057

Yo‐Sheng Lin, Hsiao-Bin Liang, Chi-Chen Chen, Jia-lun Chen, Shey-Shi Lu

{"title":"Small-signal intrinsic base resistance effect on InP-InGaAs, InGaP-GaAs and SiGe HBTs","authors":"Yo‐Sheng Lin, Hsiao-Bin Liang, Chi-Chen Chen, Jia-lun Chen, Shey-Shi Lu","doi":"10.1109/DRC.2005.1553057","DOIUrl":"https://doi.org/10.1109/DRC.2005.1553057","url":null,"abstract":"In this paper, a comprehensive analysis of the effect of small-signal intrinsic base resistance (Rbin) on the RF performances of InP-InGaAs (Gao et al., 2004), InGaP-GaAs (Bousnina et al., 2004), and SiGe HBTs are demonstrated for the first time. It was found that for these HBTs, both the real part of the equivalent input impedance (Re(Zin)) and the real part of the equivalent output impedance (Re(Zout)) increase with the increase of the intrinsic base resistance Rbin. Therefore, an increase of R bin (i.e. reducing the base doping, the base width, and the base edge length in the base contact side) makes the kink phenomena of both the scattering parameter S11 and S22 of these HBTs more obvious (Lu et al., 2001). These phenomena can be explained perfectly by our derived complete expressions of Zin and Z out at low and high frequencies. In addition, for relatively smaller Rbin, it was found that under constant collector-emitter voltage (VCE), an increase of base current (which corresponds to a decrease of base-emitter resistance (rpi ) and an increase of trans-conductance (gm)) enhances the anomalous dip. While for relatively larger Rbin, it was found that under constant VCE, an increase of base current obscures the anomalous dip. These phenomena can also be explained by our proposed theory","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131465675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

2100 W at 425 MHz with SiC RF power BJTs 2100瓦，425 MHz, SiC射频功率BJTs

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI: 10.1109/DRC.2005.1553114

A. Aaarwal, J. Haley, H. Bartlow, B. McCalpin, C. Capell, J. Palmour

引用次数: 2

MBE grown mid-infrared HgCdTe avalanche photodiodes on Si substrates MBE在Si衬底上生长中红外HgCdTe雪崩光电二极管

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI: 10.1109/DRC.2005.1553062

S. Mallik, K. Hultquist, S. Ghosh, S. Velicu, Hye-Son Jung

{"title":"MBE grown mid-infrared HgCdTe avalanche photodiodes on Si substrates","authors":"S. Mallik, K. Hultquist, S. Ghosh, S. Velicu, Hye-Son Jung","doi":"10.1109/DRC.2005.1553062","DOIUrl":"https://doi.org/10.1109/DRC.2005.1553062","url":null,"abstract":"Modern weapon systems need to detect, recognize, and track a variety of targets under a wide spectrum of atmospheric conditions. They include stationary and mobile targets against complex backgrounds and landmines. A number of active systems like hybrid LIDAR-RADAR systems, heterodyne detection as well as passive systems like thermal imagers have been proposed and developed to meet this objective. Most ground-based and air-based systems would operate at long distances. The return laser signal from the target is not only attenuated by absorption, reflection and scattering by air-borne gas, dust and liquid particles, but also by the emissivity and reflectivity variations of the target surface. High bandwidth detectors with internal gain are required. Avalanche photodetectors (APDs) are best suited for this purpose due to their high gain-bandwidth characteristics. Robust silicon-APDs are limited to visible and very near infrared region, while InGaAs works well up to certain wavelengths. On the other hand, it is important to realize that the atmospheric attenuation is wavelength dependent. Local changes in the air density yield random fluctuations in the refractive index, diverging the laser signal. Consequently, longer wavelength (MWIR: 3 - 5mum and LWIR: 8 -12mu m) source-detector systems are required to overcome the practical and seasonal conditions of the atmosphere. Previous efforts on HgCdTe APDs has been based on expensive CdZnTe substrates . The paper reports on the first HgCdTe based MWIR (3 - 5mum) APD grown on Si substrates by molecular beam epitaxy(MBE)","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128933734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0