A novel tunable wet etched mid-IR pentenary AIInGaAsSb junction laser at 2.34-2.44 /spl mu/m

Abstract

A new design for tunable mid-IR lasers is proposed and demonstrated. The design involves a new quantum well structure with AlInGaAsSb barriers and InGaAsSb wells, a new rapid thermal annealing (RTA) processing step and a new design for a wet etched waveguide junction