63rd Device Research Conference Digest, 2005. DRC '05.最新文献_第6页

High differential efficiency (>60%) continuous-wave operation of 1.3gjm inp-based VCSELs with Sb-based DBRs 高差分效率(>60%)的1.3gjm in -based vcsel与Sb-based dbr的连续波操作

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI: 10.1109/DRC.2005.1553156

D. Feezell, D. Buell, L. Johansson, L. Coldren

引用次数: 1

Mobility and sub-threshold characteristics in high-mobility dual-channel strained Si/strainef SiGe p-MOSFETs 高迁移率双通道应变Si/应变SiGe p- mosfet的迁移率和亚阈值特性

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI: 10.1109/DRC.2005.1553121

C. Ni Chleirigh, O. Olubuyide, J. Hoyt

{"title":"Mobility and sub-threshold characteristics in high-mobility dual-channel strained Si/strainef SiGe p-MOSFETs","authors":"C. Ni Chleirigh, O. Olubuyide, J. Hoyt","doi":"10.1109/DRC.2005.1553121","DOIUrl":"https://doi.org/10.1109/DRC.2005.1553121","url":null,"abstract":"In this work, for the first time, a comprehensive study of mobility, sub-threshold slope and off-state leakage current in high Ge content dual-channel strained Si/strained Si1-yGe on relaxed Si1-xGex p-MOSFETs is presented. Hole mobility enhancements of 3X are observed at high inversion charge densities (N inv=1013 cm-2) for the strained Si0.3Ge0.7 on relaxed Si0.7Ge0.3 (70/30) structure with 2 nm-thick cap, and 3 nm-thick gate oxide. A wide range of Ge fractions and Si cap thicknesses are studied. The mobility enhancement is dominated by the Ge fraction in the strained Si 1-yGey layer, while the level of strain is a second order effect. The off-state drain leakage is studied in detail. At low drain-to-gate bias (VDG), off-state leakage is attributed to a trap assisted tunneling (TAT) mechanism at the Si surface, and is sensitive to Si cap layer thickness. At high VDG the leakage increases with the Ge fraction in the strained Si1-yGey and strain in the Si cap layer, consistent with band-to-band tunneling (BTBT). The data illustrates trade-offs critical to optimizing the structures with respect to mobility, charge control, and leakage","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114486797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8

Demonstration of a high performance 40-nm-gate carbon nanotube field-effect transistor 高性能40纳米栅极碳纳米管场效应晶体管的演示

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI: 10.1109/DRC.2005.1553081

Y. Lin, A. Appenzeller, Z. Chen, Z. Chen, H. Cheng, P. Avouris

{"title":"Demonstration of a high performance 40-nm-gate carbon nanotube field-effect transistor","authors":"Y. Lin, A. Appenzeller, Z. Chen, Z. Chen, H. Cheng, P. Avouris","doi":"10.1109/DRC.2005.1553081","DOIUrl":"https://doi.org/10.1109/DRC.2005.1553081","url":null,"abstract":"Carbon nanotubes (CNTs) are promising candidates for post-Si nanoelectronics (Avouris et al., 2003). They are particularly attractive for high-speed applications due to their ballistic properties and high Fermi velocity (~106 m/s) Liang et al., 2001. The small-signal switching speed of a transistor is determined by the intrinsic delay time tau = 2piCG/gm, where C G is the gate capacitance and gm=dId/dV gs is the transconductance. For carbon nanotube field-effect transistors (CNFETs), the highest gm reported so far is ~ 27 muS by Javey et al. (Javey et al., 2004) using a dielectric film of 8-nm HfO2 (K=15). In their CNFET, the gate capacitance per unit length is estimated to be CG/L=1.8times10-16 F/mum, resulting in a gate delay per unit length of dL=42 ps/mum. Here we present a high-performance CNFET with a delay time per unit length of dL=22 ps/mum, the smallest value reported for CNFETs to date. In order to further minimize the parasitic capacitances and lower the intrinsic gate capacitance, we utilize a dual-gate design and fabricate a 40-nm gate CNFET possessing excellent subthreshold and output characteristics, which is the shortest gate length for a well-tempered CNFET demonstrated so far","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130876587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Improved reliability characteristics of ultrathin high-k MOSFET with TiN gate by employing two step post deposition annealing process 采用两步沉积后退火工艺，提高了TiN栅极超薄高k MOSFET的可靠性

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI: 10.1109/DRC.2005.1553067

M.S. Rahman, H. Park, M. Chang, R. Choi, B. Lee, J.C. Lee, H. Hwang

引用次数: 1

Nano-bio-molecular motors in microfabricated channels 微加工通道中的纳米生物分子马达

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI: 10.1109/DRC.2005.1553164

Y.M. Huang, M. Uppalapati, W. Hancock, T. Jackson

引用次数: 0

Design and fabrication of the spin-photodiode based on non-magnetic III-V semiconductor heterostructures 基于非磁性III-V型半导体异质结构的自旋光电二极管的设计与制造

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI: 10.1109/DRC.2005.1553158

T. Kondo, J. Hayafuji, H. Munekata

引用次数: 0

Metal nanocrystal/nitride heterogeneous-stack floating gate memory 金属纳米晶/氮化物异质堆叠浮栅存储器

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI: 10.1109/DRC.2005.1553073

Chungho Lee, T. Hou, E. Kan

引用次数: 6

Electrically injected quantum dot bottom-emitting photonic crystal single mode microcavity light source 电注入量子点底发射光子晶体单模微腔光源

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI: 10.1109/DRC.2005.1553037

S. Chakravarty, J. Topolancik, S. Chakrabarti, P. Bhattacharya

引用次数: 0

Vertically-scaled 100nm T-gate AlGaN/GaN HEMTs with 125GHz f/sub T/ and 174GHz f/sub MAX/ 垂直缩放的100nm T栅AlGaN/GaN hemt，频率为125GHz f/sub T/和174GHz f/sub MAX/

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI: 10.1109/DRC.2005.1553112

K. Boutros, W. Luo, K. Shinohara

引用次数: 1

High-performance silicon-germanium technology 高性能硅锗技术

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI: 10.1109/DRC.2005.1553117

S. Subbanna, G. Freeman, S. Koester, K. Rim, A. Joseph, D. Harame

引用次数: 1