Vertically-scaled 100nm T-gate AlGaN/GaN HEMTs with 125GHz f/sub T/ and 174GHz f/sub MAX/

Abstract

In this work, we report on vertically scaled, 100nm gate-length Al _0.31Ga_0.69N/AlN/GaN HEMTs with a low sheet resistance of 260Omega/square, an f_T of 125 GHz and an f _max (U_g) of 174 GHz. Careful device design and unique process features also resulted in a high peak G_m,ext of 498 mS/mm, an I_dss of 1.2A/mm, and a gate-to-drain breakdown of 30V