63rd Device Research Conference Digest, 2005. DRC '05.最新文献

High-power stable field-plated AlGaN-GaN MOSHFETs 大功率稳定场镀gan - gan moshfet

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-12-12 DOI: 10.1109/DRC.2005.1553109

V. Adivarahan, A. Koudymov, S. Rai, J. Yang, G. Simin, M. Asif Khan, Q. Fareed, R. Gaska

{"title":"High-power stable field-plated AlGaN-GaN MOSHFETs","authors":"V. Adivarahan, A. Koudymov, S. Rai, J. Yang, G. Simin, M. Asif Khan, Q. Fareed, R. Gaska","doi":"10.1109/DRC.2005.1553109","DOIUrl":"https://doi.org/10.1109/DRC.2005.1553109","url":null,"abstract":"We describe novel AlGaN-GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) with record high power-voltage efficiencies (PVE = RF power/Drain bias), up to 0.43W/V-mm at 2 GHz. The RF powers of 15 W/mm at 35 V (PVE=0.43 W/V-mm) and 20 W/mm at 55 V (PVE= 0.36W/V-mm) were measured, which are approximately 50% higher than the previously reported values of PVE=0.25 W/V-mm (30 W/mm at 120 V). The MOSHFET devices exhibit an extremely stable operation for times in excess of 120 hours at power levels close to 20 W/mm. This is also the first demonstration of stability for a III-N microwave FET device at such a high power level. The key features of our new device design are (i) current collapse-free operation using trapped charge removing field-plates over leaky dielectric layers; (ii) selective area doping to achieve record low access resistances and (iii) an insulated gate design suppressing forward gate currents responsible for device degradation. In the paper we will present detailed experimental evidence to support our explanations for achieving the record RF-performance for the III-N FETs for the first time","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131996745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A new four-terminal hybrid silicon/organic field-effect sensor device 一种新型四端硅/有机杂化场效应传感器装置

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-12-12 DOI: 10.1109/DRC.2005.1553079

D. Sharma, D. Fine, A. Dodabalapur

{"title":"A new four-terminal hybrid silicon/organic field-effect sensor device","authors":"D. Sharma, D. Fine, A. Dodabalapur","doi":"10.1109/DRC.2005.1553079","DOIUrl":"https://doi.org/10.1109/DRC.2005.1553079","url":null,"abstract":"We present the first demonstration of a novel field-effect device which has two channels: one formed in an organic semiconductor and the second in silicon. The channels are coupled such that one gates the other, with the organic channel exposed to air such that it is able to interact with chemicals in the ambient. This device represents a major improvement over both the traditional CHEMFET (which is a silicon MOSFET with the gate uncovered to be chemically sensitive) (Janata, 1989), and an organic transistor chemical sensor (Crone et al., 2001). While the device we developed can also function as a traditional CHEMFET, one of the more powerful sensing modes occurs when the two channels are coupled and changes in the organic channel carrier density in response to analyte delivery are reflected as changes in the current through the silicon channel. Another unique sensing mode, which appears to be the most sensitive, is designated as the chemical memory mode. In this mode analyte molecules result in trapped charges in the organic semiconductor which change the threshold voltage of the silicon FET. We have observed a response in the chemical memory mode that is between 10 and 100 times more intense than the response in the traditional CHEMFET mode","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132839893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

High efficiency solution processed electrophosphorescence devices 高效溶液处理的电磷光器件

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI: 10.1109/DRC.2005.1553162

S. Choulis, M. Mathai, V. Choong, F. So

引用次数: 0

Electronic polarization effects on capacitance-voltage characteristics of metal-SiO/sub 2/-thin film organic semiconductor devices 电子极化对金属- sio /sub - 2/薄膜有机半导体器件电容电压特性的影响

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI: 10.1109/DRC.2005.1553080

N. Gunther, D. Niemann, M. Barycza, C. Kwong, M. Rahman

引用次数: 1

Amplification of the semiconductor spin valve effect by a third ferromagnetic metal terminal 用第三铁磁金属终端放大半导体自旋阀效应

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI: 10.1109/DRC.2005.1553160

H. Dery, L. Cywinski, L. Sham

引用次数: 0

A novel technique to reduce leakage in metal-semiconductormetal photodetectors 一种减少金属-半导体-金属光电探测器漏损的新技术

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI: 10.1109/DRC.2005.1553059

A. Okyay, C. O. Chui, K. Saraswat

{"title":"A novel technique to reduce leakage in metal-semiconductormetal photodetectors","authors":"A. Okyay, C. O. Chui, K. Saraswat","doi":"10.1109/DRC.2005.1553059","DOIUrl":"https://doi.org/10.1109/DRC.2005.1553059","url":null,"abstract":"High efficiency and low power photodetectors operating at low absorption regions of silica fibers are attractive for both long distance and chip scale communications. Optical interconnects are promising to alleviate many limitations faced by their electrical counterparts (Miller, 2000). Easy integration of photodetectors with mainstream Si-ICs is a key aspect to realize on-chip optical clocking/signaling on dense integrated systems. Among various photodetector structures, metal-semiconductor-metal photodetectors (MSM-PDs) are attractive for their high sensitivity-bandwidth product, low capacitance and remarkable ease of integration. However, relatively large dark current (Idark) associated with a lower bandgap and thus low Schottky barrier MSMs (vs. PIN diodes (Oh et al.,2002)) like Ge and Si, poses additional power dissipation, an increasingly serious problem in today's dense integrated systems. In addition, the resultant increase in noise level demands higher optical powers for minimum detectable signal. The paper have investigated the possibility to suppress leakage current by utilizing asymmetric-area contacts on a basic MSM structure with two back-to-back Schottky diodes. Under an applied bias, an identical current flowing through the unequal area electrodes, results in an enhanced depletion at the smaller-area contact due to higher electric field at this electrode. This in turn decreases the reach through voltage, the applied bias at which the sum of the depletion widths extends through the electrode separation (i.e. total depletion operating condition). 2D MEDICItrade simulations of Si-based interdigitated MSM structures were used to verify dark current reduction with this area asymmetry scheme","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115518017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Harvesting excitons and improving charge transport in organic-inorganic hybrid photovoltaic cells 有机-无机混合光电电池中激子的收集和电荷输运的改善

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI: 10.1109/DRC.2005.1553095

M. McGehee, Yuxiang Liu, C. Goh, V. Gowrishankar, B. Srinivasan, S. Scully

引用次数: 0

Nanodevices: a bottom-up view 纳米器件:自底向上的视图

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI: 10.1109/DRC.2005.1553032

S. Datta

引用次数: 1

Structural optimization and electrical characteristics of ultra-thin gadolinium (Gd/sub 2/O/sub 3/) incorporated HfO/sub 2/ n-MOSFETs 超薄钆(Gd/sub 2/O/sub 3/)掺杂HfO/sub 2/ n- mosfet的结构优化和电学特性研究

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI: 10.1109/DRC.2005.1553128

S. Rhee, H. Kim, C. Kang, C. Choi, M. Akbar, M. Zhang, T. Lee, I. Ok, F. Zhu, S. Krishnan, J.C. Lee

引用次数: 4

Electrical characterization of individual GaN nanowires 单个GaN纳米线的电学特性

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI: 10.1109/DRC.2005.1553138

E. Stern, Guosheng Cheng, E. Cimpoiasu, Robert F. Klie, J. F. Klemic, D. Kretzschmar, J. Hyland, A. Sanders, R. Munden, Mark A. Reed

引用次数: 1