电子极化对金属- sio /sub - 2/薄膜有机半导体器件电容电压特性的影响

N. Gunther, D. Niemann, M. Barycza, C. Kwong, M. Rahman
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引用次数: 1

摘要

最近,薄膜有机半导体(OS)材料,如聚苯乙烯-乙烯(PPV),并五苯等,已经引起了研究人员的注意,用于低成本替代现有的硅应用,包括rfdd,以及有前途的新领域,如柔性电子显示器。典型地,这些薄膜表现出强烈的各向异性电子极化效应,并具有与p型非晶硅相似的导电性能。电容电压特性可以被认为是研究电子极化效应对使用这种薄膜的器件性能的有效工具之一
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electronic polarization effects on capacitance-voltage characteristics of metal-SiO/sub 2/-thin film organic semiconductor devices
Recently thin film organic semiconductor (OS) materials such as poly-phenylene-vinylene (PPV), pentacene, etc., have attracted the attention of researchers for use in low cost alternatives to existing silicon applications including RFDDs as well as promising new frontiers such as flexible electronic displays. Typically, these films exhibit strong anisotropic electronic polarization effects and possess conduction properties similar to those in p-type amorphous silicon. The capacitance-voltage characteristic can be considered as one of the effective tools for investigating electronic polarization effects on the performance of devices using such films
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