超薄钆(Gd/sub 2/O/sub 3/)掺杂HfO/sub 2/ n- mosfet的结构优化和电学特性研究

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI:10.1109/DRC.2005.1553128

S. Rhee, H. Kim, C. Kang, C. Choi, M. Akbar, M. Zhang, T. Lee, I. Ok, F. Zhu, S. Krishnan, J.C. Lee

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引用次数: 4

摘要

首次研究了Gd2O3掺杂HfO2多金属介电n- mosfet的新结构方法及其电学特性。在三种可能的介质结构中，顶部Gd2O3和底部HfO2双层介质表现出最好的EOT和漏电流特性。这种Gd2O /HfO2电介质的缩小导致EOT的超薄状态(在5Aring和10Aring之间)，与HfO2相比，泄漏电流大大降低。此外，研究人员还观察到Gd2O3/HfO2的MOSFET特性有改善的输出电流、跨导性和沟道电子迁移率

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Structural optimization and electrical characteristics of ultra-thin gadolinium (Gd/sub 2/O/sub 3/) incorporated HfO/sub 2/ n-MOSFETs

New structural approach of Gd₂O₃ incorporated HfO₂ multi-metal dielectric n-MOSFETs and their electrical characteristics are investigated for the first time. Among three possible dielectric structures, top Gd₂O₃ with bottom HfO₂ bi-layer dielectric shows the best EOT and leakage current characteristics. Scaling-down of this Gd₂O ₃/HfO₂ dielectric result in ultra-thin regime of EOT (between 5Aring and 10Aring) with substantial reduction in leakage current compared to HfO₂. Also promising MOSFET characteristics with improved output current, transconductance, and channel electron mobility for Gd₂O₃/HfO₂ are observed

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来源期刊

63rd Device Research Conference Digest, 2005. DRC '05.

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