超薄钆(Gd/sub 2/O/sub 3/)掺杂HfO/sub 2/ n- mosfet的结构优化和电学特性研究

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI:10.1109/DRC.2005.1553128

S. Rhee, H. Kim, C. Kang, C. Choi, M. Akbar, M. Zhang, T. Lee, I. Ok, F. Zhu, S. Krishnan, J.C. Lee

{"title":"超薄钆(Gd/sub 2/O/sub 3/)掺杂HfO/sub 2/ n- mosfet的结构优化和电学特性研究","authors":"S. Rhee, H. Kim, C. Kang, C. Choi, M. Akbar, M. Zhang, T. Lee, I. Ok, F. Zhu, S. Krishnan, J.C. Lee","doi":"10.1109/DRC.2005.1553128","DOIUrl":null,"url":null,"abstract":"New structural approach of Gd2O3 incorporated HfO2 multi-metal dielectric n-MOSFETs and their electrical characteristics are investigated for the first time. Among three possible dielectric structures, top Gd2O3 with bottom HfO2 bi-layer dielectric shows the best EOT and leakage current characteristics. Scaling-down of this Gd2O 3/HfO2 dielectric result in ultra-thin regime of EOT (between 5Aring and 10Aring) with substantial reduction in leakage current compared to HfO2. Also promising MOSFET characteristics with improved output current, transconductance, and channel electron mobility for Gd2O3/HfO2 are observed","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Structural optimization and electrical characteristics of ultra-thin gadolinium (Gd/sub 2/O/sub 3/) incorporated HfO/sub 2/ n-MOSFETs\",\"authors\":\"S. Rhee, H. Kim, C. Kang, C. Choi, M. Akbar, M. Zhang, T. Lee, I. Ok, F. Zhu, S. Krishnan, J.C. Lee\",\"doi\":\"10.1109/DRC.2005.1553128\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"New structural approach of Gd2O3 incorporated HfO2 multi-metal dielectric n-MOSFETs and their electrical characteristics are investigated for the first time. Among three possible dielectric structures, top Gd2O3 with bottom HfO2 bi-layer dielectric shows the best EOT and leakage current characteristics. Scaling-down of this Gd2O 3/HfO2 dielectric result in ultra-thin regime of EOT (between 5Aring and 10Aring) with substantial reduction in leakage current compared to HfO2. Also promising MOSFET characteristics with improved output current, transconductance, and channel electron mobility for Gd2O3/HfO2 are observed\",\"PeriodicalId\":306160,\"journal\":{\"name\":\"63rd Device Research Conference Digest, 2005. DRC '05.\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"63rd Device Research Conference Digest, 2005. DRC '05.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2005.1553128\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"63rd Device Research Conference Digest, 2005. DRC '05.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2005.1553128","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

首次研究了Gd2O3掺杂HfO2多金属介电n- mosfet的新结构方法及其电学特性。在三种可能的介质结构中，顶部Gd2O3和底部HfO2双层介质表现出最好的EOT和漏电流特性。这种Gd2O /HfO2电介质的缩小导致EOT的超薄状态(在5Aring和10Aring之间)，与HfO2相比，泄漏电流大大降低。此外，研究人员还观察到Gd2O3/HfO2的MOSFET特性有改善的输出电流、跨导性和沟道电子迁移率

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Structural optimization and electrical characteristics of ultra-thin gadolinium (Gd/sub 2/O/sub 3/) incorporated HfO/sub 2/ n-MOSFETs

New structural approach of Gd₂O₃ incorporated HfO₂ multi-metal dielectric n-MOSFETs and their electrical characteristics are investigated for the first time. Among three possible dielectric structures, top Gd₂O₃ with bottom HfO₂ bi-layer dielectric shows the best EOT and leakage current characteristics. Scaling-down of this Gd₂O ₃/HfO₂ dielectric result in ultra-thin regime of EOT (between 5Aring and 10Aring) with substantial reduction in leakage current compared to HfO₂. Also promising MOSFET characteristics with improved output current, transconductance, and channel electron mobility for Gd₂O₃/HfO₂ are observed

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

63rd Device Research Conference Digest, 2005. DRC '05.

自引率

0.00%

发文量