单个GaN纳米线的电学特性

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI:10.1109/DRC.2005.1553138

E. Stern, Guosheng Cheng, E. Cimpoiasu, Robert F. Klie, J. F. Klemic, D. Kretzschmar, J. Hyland, A. Sanders, R. Munden, Mark A. Reed

{"title":"单个GaN纳米线的电学特性","authors":"E. Stern, Guosheng Cheng, E. Cimpoiasu, Robert F. Klie, J. F. Klemic, D. Kretzschmar, J. Hyland, A. Sanders, R. Munden, Mark A. Reed","doi":"10.1109/DRC.2005.1553138","DOIUrl":null,"url":null,"abstract":"The authors performed a thorough electrical characterization of hot-wall-CVD fabricated GaN nanowires (NWs) by studying over 500 single NW devices, and have extracted the growth parameters responsible for wire quality. Wires were grown by the vapor-liquid-solid mechanism","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Electrical characterization of individual GaN nanowires\",\"authors\":\"E. Stern, Guosheng Cheng, E. Cimpoiasu, Robert F. Klie, J. F. Klemic, D. Kretzschmar, J. Hyland, A. Sanders, R. Munden, Mark A. Reed\",\"doi\":\"10.1109/DRC.2005.1553138\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors performed a thorough electrical characterization of hot-wall-CVD fabricated GaN nanowires (NWs) by studying over 500 single NW devices, and have extracted the growth parameters responsible for wire quality. Wires were grown by the vapor-liquid-solid mechanism\",\"PeriodicalId\":306160,\"journal\":{\"name\":\"63rd Device Research Conference Digest, 2005. DRC '05.\",\"volume\":\"55 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"63rd Device Research Conference Digest, 2005. DRC '05.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2005.1553138\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"63rd Device Research Conference Digest, 2005. DRC '05.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2005.1553138","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

作者通过对500多个纳米线器件的研究，对热壁cvd制备的GaN纳米线进行了全面的电学表征，并提取了影响纳米线质量的生长参数。电线是通过气-液-固机制生长的

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Electrical characterization of individual GaN nanowires

The authors performed a thorough electrical characterization of hot-wall-CVD fabricated GaN nanowires (NWs) by studying over 500 single NW devices, and have extracted the growth parameters responsible for wire quality. Wires were grown by the vapor-liquid-solid mechanism

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63rd Device Research Conference Digest, 2005. DRC '05.

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