采用两步沉积后退火工艺，提高了TiN栅极超薄高k MOSFET的可靠性

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI:10.1109/DRC.2005.1553067

M.S. Rahman, H. Park, M. Chang, R. Choi, B. Lee, J.C. Lee, H. Hwang

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引用次数: 1

摘要

铪和铪基氧化物材料似乎是最有前途的栅极材料。然而，高频基栅介电介质的迁移率退化问题一直是研究的难点之一。最近，我们报道了在相对较低的温度下采用高压(HP)氘退火在界面特性、器件驱动电流和最大跨导(Gm)方面的显著改善。但与成形气体退火试样相比，可靠性特性并没有明显改善。这可能是由于氧化物中存在过量的氘。在本报告中，我们报告了两步退火工艺的影响及其对可靠性和性能的影响

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Improved reliability characteristics of ultrathin high-k MOSFET with TiN gate by employing two step post deposition annealing process

Hafnium and hafnium based oxide materials seems most promising gate material for aggressively scaled device. However, the mobility degradation of Hf-base gate dielectric is one of the most difficult problems. Recently, we have reported a significant improvement in interface characteristics, device drive current and maximum transconductance (Gm) by employing high pressure (HP) deuterium annealing at relatively low temperature. However reliability characteristics are not much improved compared with forming gas annealed sample. This might be due to the presence of excess deuterium in the oxide. In this presentation, we report the effect of two step anneal process and its effect on reliability and performance

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63rd Device Research Conference Digest, 2005. DRC '05.

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