Tekhnologiya i Konstruirovanie v Elektronnoi Apparature最新文献

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Index of improvement of nonlinear single-channel signal detection systems under Gaussian noise 高斯噪声下非线性单通道信号检测系统的改进指标
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature Pub Date : 2023-01-01 DOI: 10.15222/tkea2023.1-2.09
I. V. Tsevukh, A. A. Sakovich, V. I. Tsevukh
{"title":"Index of improvement of nonlinear single-channel signal detection systems under Gaussian noise","authors":"I. V. Tsevukh, A. A. Sakovich, V. I. Tsevukh","doi":"10.15222/tkea2023.1-2.09","DOIUrl":"https://doi.org/10.15222/tkea2023.1-2.09","url":null,"abstract":"Detection of signals of moving targets against the background of an additive mixture of uncorrelated and correlated interference is one of the relevant and rather complex tasks solved in coherent-pulse radar systems. Correlated interference in the form of disturbing reflections from stationary or slowly moving objects significantly disrupts the regular operation of radar systems, which can lead to missing the target. The article presents a comparative analysis of the potential efficiency of two non-linear single-channel systems for useful signal detection operating under an additive mixture of uncorrelated and correlated Gaussian noise. To solve the task of analyzing the quality of detectors from the class of nonlinear structures, an improvement index was proposed, which is the signal/interference ratio at the output of the nonlinear system to the signal/interference ratio at its input, averaged over all possible radial velocities of the target. Numerical results of a comparative analysis of the potential effectiveness of the considered algorithms for various spectral-correlation parameters of interference are given. It was established that the potential efficiency of the algorithm developed by the author is higher than the efficiency of the algorithm implementing the well-known Hotelling statistics based on the improvement index and the parameters of the additive mixture of uncorrelated and correlated interference selected in this work.","PeriodicalId":30281,"journal":{"name":"Tekhnologiya i Konstruirovanie v Elektronnoi Apparature","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135794736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Device for measuring signals of conveyor weights when loading a vessel with bulk cargo 在装载散装货物时测量传送带重量信号的装置
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature Pub Date : 2023-01-01 DOI: 10.15222/tkea2023.1-2.50
None Zavadsky V. A., None Kharchenko R. Yu., None Dranchuk S. M., None Tsatsko V. I., None Haur T. O.
{"title":"Device for measuring signals of conveyor weights when loading a vessel with bulk cargo","authors":"None Zavadsky V. A., None Kharchenko R. Yu., None Dranchuk S. M., None Tsatsko V. I., None Haur T. O.","doi":"10.15222/tkea2023.1-2.50","DOIUrl":"https://doi.org/10.15222/tkea2023.1-2.50","url":null,"abstract":"In the maritime industry, it is common to load a vessel with bulk materials using conveyor scales. To determine the amount of cargo loaded into the hold of the vessel, it is necessary to simultaneously measure both the current weight on the weighing platform and the speed of the conveyor belt. In addition, the loading process is affected by both the heterogeneity of the bulk material and the uneven movement of the conveyor belt. Therefore, it is necessary to simultaneously and synchronously measure these parameters. The purpose of this work was to develop a device and an algorithm for its operation, which will improve the accuracy of determining the mass of cargo when loading a vessel. Such a converter is located near the measuring sensor, and the frequency signal, the frequency of which is directly proportional to the output signal of the sensor along the line, is transmitted over a considerable distance without loss of information to the measuring device. The developed device for measuring the mass of bulk material using conveyor scales and the algorithm of its operation make it possible to simultaneously and continuously measure the current mass of the cargo and the speed of the conveyor belt, and, accordingly, the current mass of the cargo. The measurement accuracy was 0.25...0.5%. This device also allows you to get the characteristics of the weighing process to improve the mechanical conveyor designs of the scales. Testing of the developed device was carried out on conveyor scales when loading the ship with mineral fertilizers. Testing showed that the developed device for obtaining tensometric information and the algorithm of its operation make it possible to control the process of loading a ship with bulk materials using conveyor scales with the planned accuracy, which, in turn, allows it to be used in computer systems for monitoring ship loading. The developed device and the algorithm of its operation can improve the quality of measuring the mass of cargo and increase the accuracy of measurement, which is important from an economic point of view.","PeriodicalId":30281,"journal":{"name":"Tekhnologiya i Konstruirovanie v Elektronnoi Apparature","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135839025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hybrid battery-supercapacitor energy storage system for micromobile electric vehicles 微型电动汽车用混合电池-超级电容器储能系统
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature Pub Date : 2023-01-01 DOI: 10.15222/tkea2023.1-2.14
{"title":"Hybrid battery-supercapacitor energy storage system for micromobile electric vehicles","authors":"","doi":"10.15222/tkea2023.1-2.14","DOIUrl":"https://doi.org/10.15222/tkea2023.1-2.14","url":null,"abstract":"The study proves the importance of hybridising the power supply system of micromobile electric vehicles, taking into account the strict limitations on the final size and weight of the storage device, using the example of an electric bicycle. The authors offer a brief overview of the main hybridization topologies and analyze the advantages and disadvantages of each of them. The paper describes the possibilities of using supercapacitors as an additional source of energy for a hybrid system and proposes a way to deal with the disadvantages of using standard batteries by combining them with an additional energy source. A mathematical basis is given to such a solution being able to unload the main power source by drawing excessive current at peak consumption times, thereby providing a wider range of operating voltages compared to using only a standard power source. To ensure optimal weight and size parameters of the drive, an active system with a controlled auxiliary power source is chosen. In this topology, the second converter is installed between the additional energy source, the supercapacitor storage device, and the battery. It is proposed to implement the schematic of this converter using a Chuck converter with an automated control system containing a feedback loop and based on a microcontroller, which ensures a relatively quick change of the control algorithm depending on the configuration and requirements for the system. The paper also presents the algorithm of the storage system operation for possible modes of electric bicycle operation. The transfer characteristic is calculated using the averaged state method. To confirm the operability of the auxiliary power source, a converter circuit is developed and simulation modelling is carried out in MATLAB Simulink. The system simulation allowed assessing the nature of the transient processes of the open-loop system and the accuracy of the transfer characteristic calculation.","PeriodicalId":30281,"journal":{"name":"Tekhnologiya i Konstruirovanie v Elektronnoi Apparature","volume":"159 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135839275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
I-V-characteristics of Schottky diodes based on graphene/n-Si heterostructures 基于石墨烯/n-Si异质结构的肖特基二极管的i - v特性
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature Pub Date : 2023-01-01 DOI: 10.15222/tkea2023.1-2.03
I. P. Koziarskyi, M. I. Ilashchuk, I. G. Orletskyi, D. P. Koziarskyi, L. A. Myroniuk, D. V. Myroniuk, A. I. Ievtushenko, I. M. Danylenko, E. V. Maistruk
{"title":"I-V-characteristics of Schottky diodes based on graphene/n-Si heterostructures","authors":"I. P. Koziarskyi, M. I. Ilashchuk, I. G. Orletskyi, D. P. Koziarskyi, L. A. Myroniuk, D. V. Myroniuk, A. I. Ievtushenko, I. M. Danylenko, E. V. Maistruk","doi":"10.15222/tkea2023.1-2.03","DOIUrl":"https://doi.org/10.15222/tkea2023.1-2.03","url":null,"abstract":"The authors investigated the electrical properties of graphene/n-Si Schottky diode heterostructures obtained by mechanical exfoliation of graphite to thin-layer graphene in an aqueous solution of polyvinylpyrrolidone as a result of the dynamics of the dispersed graphite mixture under the action of a mechanical blender. The graphene/n-Si structures differed in terms of duration of applying graphene films on n-Si substrates: 5, 10 and 15 min. The temperature of the substrates did not exceed 250°C. The formation of graphene layers was confirmed by the study of Raman scattering spectra in the frequency range of 1000—3250 cm–1, which show G and 2D bands with the features characteristic of low-layer graphene. The dependence of the electrical properties of the investigated surface-barrier graphene/n-Si structures on the duration of sputtering of graphene films was established. It was found that the value of the contact potential difference φk was 1.35, 1.32 and 1.27 V and the series resistance at room temperature was 3.4•106, 3.4•103 and 3.7•103 Ω for structures with the duration of graphene layer deposition 5, 10 and 15 min, respectively. The formation of both forward and reverse currents was dominated by the tunneling of charge carriers through the potential barrier.","PeriodicalId":30281,"journal":{"name":"Tekhnologiya i Konstruirovanie v Elektronnoi Apparature","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135801262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improvement of inverse characteristics of silicon varicap by using low-temperature gettering 用低温吸湿法改善硅varicap的反特性
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature Pub Date : 2023-01-01 DOI: 10.15222/tkea2023.1-2.43
V. N. Litvinenko, S. V. Shutov
{"title":"Improvement of inverse characteristics of silicon varicap by using low-temperature gettering","authors":"V. N. Litvinenko, S. V. Shutov","doi":"10.15222/tkea2023.1-2.43","DOIUrl":"https://doi.org/10.15222/tkea2023.1-2.43","url":null,"abstract":"Varicaps are widely used in radio electronics as a variable capacitance, the value of which is controlled by voltage. However, it should be noted that the cost of varicaps remains relatively high due to a low yield of suitable devices. This is caused by high levels of reverse currents and low breakdown voltages of varicaps, which is determined by the significant dependence of the reverse characteristics of varicaps on the density of structural defects and heavy metal impurities in their active regions. This study aimed to discover the causes and mechanisms of degradation of the reverse characteristics of varicaps with an ohmic contact based on nickel during annealing of a nickel film during the formation of an ohmic contact. Another goal was to determine the possibility of using gettering operations to prevent degradation of the reverse characteristics of varicaps and increase the yield of suitable devices. The conducted experimental studies have shown that the reason for the degradation of the reverse characteristics of varicaps during the formation of a nickel-based ohmic contact is that, during the annealing of the nickel film, the excess nickel atoms not involved in the formation of NiSi silicide penetrate into the region of the space charge of the p-n junction. The authors consider in detail the proposed technology for manufacturing nickel-based varicap structures with an ohmic contact using gettering of excess nickel atoms by carrying out additional low-temperature annealing of varicap structures using a ready-made “intrinsic geter” — the Si-NiSi interface. It is shown that the developed technology for fabricating varicap structures using gettering makes it possible to clean the active regions of varicaps from nickel atoms, which ensures a significant decrease in the level of varicap reverse currents and an increase in the yield of suitable devices.","PeriodicalId":30281,"journal":{"name":"Tekhnologiya i Konstruirovanie v Elektronnoi Apparature","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135839262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Aspects of using of sheet thermomigration of the Al+Si three-dimensional liquid zone to form semiconductor power devices 利用Al+Si三维液态区片热法形成半导体功率器件的几个方面
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature Pub Date : 2023-01-01 DOI: 10.15222/tkea2023.1-2.34
O. S. Polukhin, V. V. Kravchina
{"title":"Aspects of using of sheet thermomigration of the Al+Si three-dimensional liquid zone to form semiconductor power devices","authors":"O. S. Polukhin, V. V. Kravchina","doi":"10.15222/tkea2023.1-2.34","DOIUrl":"https://doi.org/10.15222/tkea2023.1-2.34","url":null,"abstract":"The paper considers using the technology of sheet thermomigration of three-dimensional zones, which implements p+-Si* liquid epitaxy on an n-Si wafer, to produce power semiconductor devices with crystals having thinned layers of high-resistive n-Si base, which are surrounded by p+-Si* side insulation regions, and thickened p+-Si* emitter layers. This technology, which has a number of advantages, was used to create diode arrays in n-Si with a specific resistance of 20 Ω•cm. For recrystallization, p+-Si wafers with a resistivity of 0.005 Ω•cm were used. The produced direct polarity diodes had a breakdown voltage of 1000 V, a forward voltage drop of 1.17 V at a current density of 2.0 A/mm2, and a reverse resistance recovery time of trr = 1.5 µs. Additional use of the technology of creation of recombination centers allowed to further improve trr to 0.5 μs.","PeriodicalId":30281,"journal":{"name":"Tekhnologiya i Konstruirovanie v Elektronnoi Apparature","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135839009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Impact of changing the shape of gravity heat pipe with threaded evaporator on its heat transfer characteristics 改变带螺纹蒸发器的重力热管形状对其传热特性的影响
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature Pub Date : 2023-01-01 DOI: 10.15222/tkea2023.1-2.27
L. V. Lipnitskyi, R. S. Melnyk, Yu. E. Nikolaenko, V. Yu. Kravets, D. V. Pekur
{"title":"Impact of changing the shape of gravity heat pipe with threaded evaporator on its heat transfer characteristics","authors":"L. V. Lipnitskyi, R. S. Melnyk, Yu. E. Nikolaenko, V. Yu. Kravets, D. V. Pekur","doi":"10.15222/tkea2023.1-2.27","DOIUrl":"https://doi.org/10.15222/tkea2023.1-2.27","url":null,"abstract":"The modern development of electronics is associated with the problem of reducing the mass and size of the equipment while increasing its power. This leads to an increase in the temperature of both individual elements and the device as a whole, which contributes to a decrease in equipment reliability. This makes the development of inexpensive yet efficient cooling systems an urgent task. One of the ways to solve this problem is to use heat pipes of a new simplified design in cooling systems. This article compares the thermal characteristics of a cylindrical copper gravity heat pipe with a threaded evaporator before and after flattening. The working fluid used in the experiment was R141b. Experimental studies were conducted at two tilt angles relative to the horizontal under the conditions of forced convection cooling of the condensation zone. The influence of the change in the shape of the body from cylindrical to flat on the temperature in the heating zone of the heat pipe, thermal resistance, and heat transfer coefficients in the evaporation and condensation zones was shown in the range of heat power from 5 to 70 W. The choice of the heat pipe is justified based on the maximum thermal loads of electronic components and the orientation of the cooling system in space. Changing the shape of heat pipe from cylindrical to flat leads to a decrease in the maximum thermal power transmitted, but a flat heat pipe shape is more technologically feasible for use in cooling systems of electronic equipment.","PeriodicalId":30281,"journal":{"name":"Tekhnologiya i Konstruirovanie v Elektronnoi Apparature","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135839007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of microstrip microwave phase shifters for antenna arrays 天线阵列用微带微波移相器的设计
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature Pub Date : 2017-06-01 DOI: 10.15222/TKEA2017.3.12
Э. Н. Глушеченко, E. Glushechenko
{"title":"Design of microstrip microwave phase shifters for antenna arrays","authors":"Э. Н. Глушеченко, E. Glushechenko","doi":"10.15222/TKEA2017.3.12","DOIUrl":"https://doi.org/10.15222/TKEA2017.3.12","url":null,"abstract":"","PeriodicalId":30281,"journal":{"name":"Tekhnologiya i Konstruirovanie v Elektronnoi Apparature","volume":"1 1","pages":"12-18"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49130306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Detection of outliers in processing of small size data 小数据处理中异常值的检测
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature Pub Date : 2016-10-01 DOI: 10.15222/TKEA2016.4-5.42
В. С. Попукайло, V. Popukaylo
{"title":"Detection of outliers in processing of small size data","authors":"В. С. Попукайло, V. Popukaylo","doi":"10.15222/TKEA2016.4-5.42","DOIUrl":"https://doi.org/10.15222/TKEA2016.4-5.42","url":null,"abstract":"","PeriodicalId":30281,"journal":{"name":"Tekhnologiya i Konstruirovanie v Elektronnoi Apparature","volume":"1 1","pages":"42-46"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67331988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Intensification of heat transfer in liquid heat exchangers with dimple-pin finning 带窝针翅片的液体换热器传热强化研究
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature Pub Date : 2016-02-01 DOI: 10.15222/TKEA2016.1.23
V. Trofimov, A. Pavlov, Василий Трофимов, А. Л. Павлов
{"title":"Intensification of heat transfer in liquid heat exchangers with dimple-pin finning","authors":"V. Trofimov, A. Pavlov, Василий Трофимов, А. Л. Павлов","doi":"10.15222/TKEA2016.1.23","DOIUrl":"https://doi.org/10.15222/TKEA2016.1.23","url":null,"abstract":"","PeriodicalId":30281,"journal":{"name":"Tekhnologiya i Konstruirovanie v Elektronnoi Apparature","volume":"1 1","pages":"23-26"},"PeriodicalIF":0.0,"publicationDate":"2016-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67331980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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