用低温吸湿法改善硅varicap的反特性

V. N. Litvinenko, S. V. Shutov
{"title":"用低温吸湿法改善硅varicap的反特性","authors":"V. N. Litvinenko, S. V. Shutov","doi":"10.15222/tkea2023.1-2.43","DOIUrl":null,"url":null,"abstract":"Varicaps are widely used in radio electronics as a variable capacitance, the value of which is controlled by voltage. However, it should be noted that the cost of varicaps remains relatively high due to a low yield of suitable devices. This is caused by high levels of reverse currents and low breakdown voltages of varicaps, which is determined by the significant dependence of the reverse characteristics of varicaps on the density of structural defects and heavy metal impurities in their active regions. This study aimed to discover the causes and mechanisms of degradation of the reverse characteristics of varicaps with an ohmic contact based on nickel during annealing of a nickel film during the formation of an ohmic contact. Another goal was to determine the possibility of using gettering operations to prevent degradation of the reverse characteristics of varicaps and increase the yield of suitable devices. The conducted experimental studies have shown that the reason for the degradation of the reverse characteristics of varicaps during the formation of a nickel-based ohmic contact is that, during the annealing of the nickel film, the excess nickel atoms not involved in the formation of NiSi silicide penetrate into the region of the space charge of the p-n junction. The authors consider in detail the proposed technology for manufacturing nickel-based varicap structures with an ohmic contact using gettering of excess nickel atoms by carrying out additional low-temperature annealing of varicap structures using a ready-made “intrinsic geter” — the Si-NiSi interface. It is shown that the developed technology for fabricating varicap structures using gettering makes it possible to clean the active regions of varicaps from nickel atoms, which ensures a significant decrease in the level of varicap reverse currents and an increase in the yield of suitable devices.","PeriodicalId":30281,"journal":{"name":"Tekhnologiya i Konstruirovanie v Elektronnoi Apparature","volume":"115 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improvement of inverse characteristics of silicon varicap by using low-temperature gettering\",\"authors\":\"V. N. Litvinenko, S. V. Shutov\",\"doi\":\"10.15222/tkea2023.1-2.43\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Varicaps are widely used in radio electronics as a variable capacitance, the value of which is controlled by voltage. However, it should be noted that the cost of varicaps remains relatively high due to a low yield of suitable devices. This is caused by high levels of reverse currents and low breakdown voltages of varicaps, which is determined by the significant dependence of the reverse characteristics of varicaps on the density of structural defects and heavy metal impurities in their active regions. This study aimed to discover the causes and mechanisms of degradation of the reverse characteristics of varicaps with an ohmic contact based on nickel during annealing of a nickel film during the formation of an ohmic contact. Another goal was to determine the possibility of using gettering operations to prevent degradation of the reverse characteristics of varicaps and increase the yield of suitable devices. The conducted experimental studies have shown that the reason for the degradation of the reverse characteristics of varicaps during the formation of a nickel-based ohmic contact is that, during the annealing of the nickel film, the excess nickel atoms not involved in the formation of NiSi silicide penetrate into the region of the space charge of the p-n junction. The authors consider in detail the proposed technology for manufacturing nickel-based varicap structures with an ohmic contact using gettering of excess nickel atoms by carrying out additional low-temperature annealing of varicap structures using a ready-made “intrinsic geter” — the Si-NiSi interface. It is shown that the developed technology for fabricating varicap structures using gettering makes it possible to clean the active regions of varicaps from nickel atoms, which ensures a significant decrease in the level of varicap reverse currents and an increase in the yield of suitable devices.\",\"PeriodicalId\":30281,\"journal\":{\"name\":\"Tekhnologiya i Konstruirovanie v Elektronnoi Apparature\",\"volume\":\"115 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Tekhnologiya i Konstruirovanie v Elektronnoi Apparature\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.15222/tkea2023.1-2.43\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Tekhnologiya i Konstruirovanie v Elektronnoi Apparature","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.15222/tkea2023.1-2.43","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

可变电容作为一种可变电容广泛应用于无线电电子学中,其值由电压控制。然而,应该指出的是,由于合适设备的产量低,varicaps的成本仍然相对较高。这是由高水平的反向电流和低击穿电压引起的,这是由varicaps的反向特性对其活性区域的结构缺陷和重金属杂质的密度的显著依赖所决定的。本研究旨在发现在欧姆接触形成过程中镍膜退火过程中,镍基欧姆接触变压的反向特性退化的原因和机制。另一个目标是确定使用捕集操作的可能性,以防止varicaps反向特性的退化,并增加合适设备的产量。所进行的实验研究表明,在镍基欧姆接触形成过程中,varicaps的反向特性退化的原因是,在镍膜退火过程中,未参与NiSi硅化物形成的多余镍原子渗透到p-n结的空间电荷区域。作者详细考虑了提出的制造镍基瓦里卡结构的技术,该技术采用欧姆接触,通过使用现成的“本征体”- Si-NiSi界面对瓦里卡结构进行额外的低温退火,以吸收多余的镍原子。研究表明,利用吸波技术制备varicap结构,可以从镍原子中清除varicap的活性区域,从而保证了varicap反向电流水平的显著降低和合适器件的产率的提高。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Improvement of inverse characteristics of silicon varicap by using low-temperature gettering
Varicaps are widely used in radio electronics as a variable capacitance, the value of which is controlled by voltage. However, it should be noted that the cost of varicaps remains relatively high due to a low yield of suitable devices. This is caused by high levels of reverse currents and low breakdown voltages of varicaps, which is determined by the significant dependence of the reverse characteristics of varicaps on the density of structural defects and heavy metal impurities in their active regions. This study aimed to discover the causes and mechanisms of degradation of the reverse characteristics of varicaps with an ohmic contact based on nickel during annealing of a nickel film during the formation of an ohmic contact. Another goal was to determine the possibility of using gettering operations to prevent degradation of the reverse characteristics of varicaps and increase the yield of suitable devices. The conducted experimental studies have shown that the reason for the degradation of the reverse characteristics of varicaps during the formation of a nickel-based ohmic contact is that, during the annealing of the nickel film, the excess nickel atoms not involved in the formation of NiSi silicide penetrate into the region of the space charge of the p-n junction. The authors consider in detail the proposed technology for manufacturing nickel-based varicap structures with an ohmic contact using gettering of excess nickel atoms by carrying out additional low-temperature annealing of varicap structures using a ready-made “intrinsic geter” — the Si-NiSi interface. It is shown that the developed technology for fabricating varicap structures using gettering makes it possible to clean the active regions of varicaps from nickel atoms, which ensures a significant decrease in the level of varicap reverse currents and an increase in the yield of suitable devices.
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