发布求助
文献互助 智能选刊 最新文献

First IEEE International Conference on Group IV Photonics, 2004.最新文献

筛选
英文 中文
Silicon-based waveguide-coupled planar photonic-crystal-embedded microcavities 硅基波导耦合平面光子晶体嵌入微腔
First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI: 10.1109/GROUP4.2004.1416732
K. Tsia, A. Poon
{"title":"Silicon-based waveguide-coupled planar photonic-crystal-embedded microcavities","authors":"K. Tsia, A. Poon","doi":"10.1109/GROUP4.2004.1416732","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416732","url":null,"abstract":"We numerically simulate silicon-based waveguide-coupled planar square microcavities with embedded square lattice of air holes. Our two-dimensional finite-difference time-domain simulations reveal quasi-periodic high-Q resonances with frequencies limited within the first band of the photonic crystal.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123493237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Low temperature formation of /spl beta/--FeSi/sub 2/ polycrystalline by pulsed laser deposition and thermal annealing 脉冲激光沉积和热退火制备/spl β /—FeSi/sub - 2/多晶
First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI: 10.1109/GROUP4.2004.1416675
H. Sugawara, S. Nakamura, M. Oouchi, Y. Kumura, T. Shishido, M. Kishi, M. Tsuchiya
{"title":"Low temperature formation of /spl beta/--FeSi/sub 2/ polycrystalline by pulsed laser deposition and thermal annealing","authors":"H. Sugawara, S. Nakamura, M. Oouchi, Y. Kumura, T. Shishido, M. Kishi, M. Tsuchiya","doi":"10.1109/GROUP4.2004.1416675","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416675","url":null,"abstract":"Polycrystalline /spl beta/-FeSi/sub 2/ droplets were successfully formed by an exceptionally low temperature process: the room temperature pulsed laser deposition and a 350 /spl deg/C post-annealing. Their evidences have been derived by microscopic Raman spectroscopy and TEM observation.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122692230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Facet preparation of SOI waveguides by etching and cleaving compared to dicing and polishing 通过蚀刻和切割制备SOI波导的小面与切割和抛光的比较
First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI: 10.1109/GROUP4.2004.1416657
M. Schnarrenberger, L. Zimmermann, T. Mitze, J. Bruns, K. Petermann
{"title":"Facet preparation of SOI waveguides by etching and cleaving compared to dicing and polishing","authors":"M. Schnarrenberger, L. Zimmermann, T. Mitze, J. Bruns, K. Petermann","doi":"10.1109/GROUP4.2004.1416657","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416657","url":null,"abstract":"We compared two different techniques of facet preparation of silicon-on-insulator (SOI) waveguides: The conventional by dicing and polishing and our proposed by dry etching the facets and cleaving along anisotropically etched cleaving grooves.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126988888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Silicon-based photonic bandgap modulators 硅基光子带隙调制器
First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI: 10.1109/GROUP4.2004.1416725
S. Weiss, M. Haurylau, P. Fauchet
{"title":"Silicon-based photonic bandgap modulators","authors":"S. Weiss, M. Haurylau, P. Fauchet","doi":"10.1109/GROUP4.2004.1416725","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416725","url":null,"abstract":"Silicon-based modulators are the missing link necessary for practical optical interconnects. Electrically and thermally tunable silicon-based photonic bandgap structures are demonstrated as building blocks for compact and low power out-of-plane and in-plane optical modulation.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121656672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Technology for ring resonator switches using electro-optic materials 使用电光材料的环形谐振器开关技术
First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI: 10.1109/GROUP4.2004.1416640
Y. Tanushi, M. Wake, K. Wakushima, K. Suzuki, S. Yokoyama
{"title":"Technology for ring resonator switches using electro-optic materials","authors":"Y. Tanushi, M. Wake, K. Wakushima, K. Suzuki, S. Yokoyama","doi":"10.1109/GROUP4.2004.1416640","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416640","url":null,"abstract":"Ring resonator switches using electro-optic materials on Si LSI are proposed and the operation voltages are simulated. Fabrication technologies for the resonators are developed. Light propagation in the optical waveguide using electro-optic material is confirmed.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115892879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Doping density dependence of 4f-4f couplings between Er and Yb ions in nanocrystalline Si 纳米晶Si中Er和Yb离子之间4f-4f耦合的掺杂密度依赖性
First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI: 10.1109/GROUP4.2004.1416664
Xinwei Zhao, K. Kohno, S. Harako, N. Takahashi, S. Komuro
{"title":"Doping density dependence of 4f-4f couplings between Er and Yb ions in nanocrystalline Si","authors":"Xinwei Zhao, K. Kohno, S. Harako, N. Takahashi, S. Komuro","doi":"10.1109/GROUP4.2004.1416664","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416664","url":null,"abstract":"This paper presents the formation and time-resolved investigation of Er and Yb co-doped nc-Si thin films. Since the energy of the only one excited state /sup 2/F/sub 5/2/ of a Yb/sup 3+/ ion is almost same to that of the second excited state /sup 4/I/sub 11/2/ of an Er/sup 3-/ ion, the optical transition between them is expected to raise the excitation rate of the Er/sup 3+/ ion.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116859791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Advances in dispersion-based silicon photonic-crystal physics, devices and fabrication 基于色散的硅光子晶体物理、器件和制造的进展
First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI: 10.1109/GROUP4.2004.1416728
D. Prather
{"title":"Advances in dispersion-based silicon photonic-crystal physics, devices and fabrication","authors":"D. Prather","doi":"10.1109/GROUP4.2004.1416728","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416728","url":null,"abstract":"In this work we present and experimentally validate self-collimation in planar photonic crystals (PhC) as a means to achieve defect-free confinement of light in PhC devices. We demonstrate the ability to arbitrarily guide and route light by exploiting the dispersive characteristics of the photonic crystal. Propagation loss as low as 2.17 dB/mm is measured, and experimental validation of routing structures is presented.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114859023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
1.5 /spl mu/m PL fine structures and their extreme fast decay of crystalline ErSiO compounds 1.5 /spl mu/m PL精细结构及其晶体ErSiO化合物的极快衰变
First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI: 10.1109/GROUP4.2004.1416739
H. Isshiki, K. Masaki, K. Ueda, R. Saito, T. Kimura
{"title":"1.5 /spl mu/m PL fine structures and their extreme fast decay of crystalline ErSiO compounds","authors":"H. Isshiki, K. Masaki, K. Ueda, R. Saito, T. Kimura","doi":"10.1109/GROUP4.2004.1416739","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416739","url":null,"abstract":"Er-related 1.5 /spl mu/m emissions with linewidth of less than 1 meV and 10 /spl mu/s lifetime have been observed in crystalline ErSiO superstructures.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"26 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121014243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New solar cells using Ge dots embedded in Si PIN structures 在Si PIN结构中嵌入Ge点的新型太阳能电池
First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI: 10.1109/GROUP4.2004.1416698
N. Usami, A. Arnold, K. Fujiwara, K. Nakjima, T. Yokoyama, Y. Shiraki
{"title":"New solar cells using Ge dots embedded in Si PIN structures","authors":"N. Usami, A. Arnold, K. Fujiwara, K. Nakjima, T. Yokoyama, Y. Shiraki","doi":"10.1109/GROUP4.2004.1416698","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416698","url":null,"abstract":"Stacked Ge dots are embedded in the intrinsic layer of Si-based PIN solar cells to improve the device performance. Relationship between structural parameters and photovoltaic properties is discussed through systematic variation of the repetition number of stacked Ge dots and Si spacer width to separate Ge dots.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128051281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Silicon-on-insulator (SOI): a path to high-density silicon optoelectronics? 绝缘体上硅(SOI):通向高密度硅光电子的道路?
First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI: 10.1109/GROUP4.2004.1416713
Martin A. Green
{"title":"Silicon-on-insulator (SOI): a path to high-density silicon optoelectronics?","authors":"Martin A. Green","doi":"10.1109/GROUP4.2004.1416713","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416713","url":null,"abstract":"With the greatly enhanced light-emission efficiencies in bulk silicon light emitting diodes (LEDs), they have investigated prospects for applying these improvements to the co-integration of optical and electronic functions into silicon-based microelectronics. One mitigating factor is the perceived need for microelectronics to move to SOI to maintain present rates of progress, with benefits for ultra-thin Si layers. For further investigation, optical properties of ultra-thin SOI are studied.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123354531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信