Facet preparation of SOI waveguides by etching and cleaving compared to dicing and polishing

First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI:10.1109/GROUP4.2004.1416657

M. Schnarrenberger, L. Zimmermann, T. Mitze, J. Bruns, K. Petermann

引用次数: 7

Abstract

We compared two different techniques of facet preparation of silicon-on-insulator (SOI) waveguides: The conventional by dicing and polishing and our proposed by dry etching the facets and cleaving along anisotropically etched cleaving grooves.

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通过蚀刻和切割制备SOI波导的小面与切割和抛光的比较

我们比较了两种不同的制备绝缘体上硅(SOI)波导的工艺:传统的切割和抛光工艺，以及我们提出的沿各向异性刻蚀的刻蚀槽进行干刻蚀和切割的工艺。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

First IEEE International Conference on Group IV Photonics, 2004.

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