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First IEEE International Conference on Group IV Photonics, 2004.最新文献

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Electro-optical switching in SiGe/Si waveguide devices SiGe/Si波导器件中的电光开关
First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI: 10.1109/GROUP4.2004.1416647
S. Chua, J. Teng, B. Li
{"title":"Electro-optical switching in SiGe/Si waveguide devices","authors":"S. Chua, J. Teng, B. Li","doi":"10.1109/GROUP4.2004.1416647","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416647","url":null,"abstract":"In this paper, the advantages of using SiGe/Si in optical waveguide switches at the fiber-optic communication wavelength are introduced. This study also provides descriptions of the operation and switching characteristics of several optical waveguide switches based on the carrier injection principle, starting with a conventional symmetric structure.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134246216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Intense room temperature near infrared emission from Al/sup 3+/ and Yb/sup 3+/ ions co-implanted SiO/sub 2/ film on silicon Al/sup 3+/和Yb/sup 3+/离子发出的强室温近红外辐射在硅表面共注入SiO/sub 2/薄膜
First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI: 10.1109/GROUP4.2004.1416654
J. Zhang, B. Cheng, J. Gao, J.Z. Yu, Q.M. Wang
{"title":"Intense room temperature near infrared emission from Al/sup 3+/ and Yb/sup 3+/ ions co-implanted SiO/sub 2/ film on silicon","authors":"J. Zhang, B. Cheng, J. Gao, J.Z. Yu, Q.M. Wang","doi":"10.1109/GROUP4.2004.1416654","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416654","url":null,"abstract":"Intense near infrared emission was observed from Al/sup 3+/ and Yb/sup 3+/ ions co-implanted SiO/sub 2/ film on silicon. It was found that the addition of Al/sup 3+/ ions could remarkably improve the photoluminescence efficiency of Yb/sup 3+/-implanted SiO/sub 2/ film. No excitation power saturation was observed and trivial temperature quenching factor of 2 was achieved.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133069281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Surface gratings as a diagnostic for higher order modes in SOI waveguides 表面光栅作为SOI波导中高阶模式的诊断
First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI: 10.1109/GROUP4.2004.1416717
V. Ta'eed, D. Moss, B. Eggleton, D. Freeman, S. Madden, M. Samoć, B. Luther-Davies, S. Janz, D. Xu
{"title":"Surface gratings as a diagnostic for higher order modes in SOI waveguides","authors":"V. Ta'eed, D. Moss, B. Eggleton, D. Freeman, S. Madden, M. Samoć, B. Luther-Davies, S. Janz, D. Xu","doi":"10.1109/GROUP4.2004.1416717","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416717","url":null,"abstract":"We report the first focused ion beam milled silicon-on-insulator waveguide Bragg gratings. We further demonstrate that higher order lossy modes dramatically affect the transmission spectra of surface gratings even in single-mode waveguides.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127771796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Si:Er-based light emitting diodes for optoelectronic applications grown with sublimation MBE technique 用升华MBE技术生长的光电应用硅:铒基发光二极管
First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI: 10.1109/GROUP4.2004.1416696
Z. F. Krasil'nik, V. P. Kuznetsov, D. Remizov, V. Shmagin
{"title":"Si:Er-based light emitting diodes for optoelectronic applications grown with sublimation MBE technique","authors":"Z. F. Krasil'nik, V. P. Kuznetsov, D. Remizov, V. Shmagin","doi":"10.1109/GROUP4.2004.1416696","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416696","url":null,"abstract":"Various types of Si:Er-based LEDs grown with sublimation variant of traditional MBE (SMBE) technique are examined. The effect of breakdown nature on Er-related EL intensity and excitation efficiency is also investigated.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129921458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Compositional and optical characterization of SiO/sub x/ films deposited by ECR-PECVD for photonics applications ECR-PECVD沉积SiO/ subx /光子学薄膜的组成和光学特性
First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI: 10.1109/GROUP4.2004.1416656
M. Flynn, E. Irving, T. Roschuk, J. Wójcik, R. Mascher
{"title":"Compositional and optical characterization of SiO/sub x/ films deposited by ECR-PECVD for photonics applications","authors":"M. Flynn, E. Irving, T. Roschuk, J. Wójcik, R. Mascher","doi":"10.1109/GROUP4.2004.1416656","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416656","url":null,"abstract":"Thin SiO/sub x/ films were deposited using ECR-PECVD. The composition and structure of the samples was determined using Rutherford backscattering and Fourier transform infrared spectroscopy while photoluminescence and ellipsometric measurements were used to characterize the samples optically. AFM measurements confirmed the presence of silicon nanocrystals after annealing the samples. These materials have the potential to he used in a variety of applications, including rare-earth doping, as well as their applicability to optical coatings because of the large achievable range of refractive indices.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129777053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A silicon light emitting devices in standard CMOS technology 一种采用标准CMOS技术的硅发光器件
First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI: 10.1109/GROUP4.2004.1416662
Hongda Chen, Zenghui Sun, Hai-jun Liu, Peng Gao
{"title":"A silicon light emitting devices in standard CMOS technology","authors":"Hongda Chen, Zenghui Sun, Hai-jun Liu, Peng Gao","doi":"10.1109/GROUP4.2004.1416662","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416662","url":null,"abstract":"A silicon light emitting device is designed and simulated. It is fabricated in 0.6 /spl mu/m standard CMOS technology. The device can give more than 1 /spl mu/W optical power of visible light under reverse breakdown. The device can be turned on at a bias of 0.88 V and work in a large range of voltage: 1.0-6.0 V. The external electrical-optical conversion efficiency is more than 10/sup -6/. The optical spectrum of the device is between 540-650 nm, which have a clear peak near 580 nm. The emission mechanism can be explained by a hot carrier direct recombination model.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121100495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Enhanced green luminescence from Tb doped silicon-rich silicon oxide co-doped with C or N Tb掺杂富硅氧化硅与C或N共掺杂增强绿色发光
First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI: 10.1109/GROUP4.2004.1416741
S. Seo, Hoon Jeong, K. Cho, J. Shin
{"title":"Enhanced green luminescence from Tb doped silicon-rich silicon oxide co-doped with C or N","authors":"S. Seo, Hoon Jeong, K. Cho, J. Shin","doi":"10.1109/GROUP4.2004.1416741","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416741","url":null,"abstract":"We report on enhanced green luminescence from Tb-doped silicon-rich silicon oxide film co-doped with C or N. We attribute such enhancement on the effect of C/N doping on formation of high-energy excitons.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115122361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electroluminescence and infrared gain in strained GaSb quantum dots in silicon 硅中应变GaSb量子点的电致发光和红外增益
First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI: 10.1109/GROUP4.2004.1416652
S. Fukatsu, M. Jo, N. Yasuhara, Y. Sugawara, K. Kawamoto
{"title":"Electroluminescence and infrared gain in strained GaSb quantum dots in silicon","authors":"S. Fukatsu, M. Jo, N. Yasuhara, Y. Sugawara, K. Kawamoto","doi":"10.1109/GROUP4.2004.1416652","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416652","url":null,"abstract":"Compound semiconductor quantum dots (QDs) buried in Si have been developed as a new class of band-gap engineered Si-based QDs. It is demonstrated that the excellent optical properties of GaSb/Si QDs allow gain in the near-infrared.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131291237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Propagation characteristics of Si nitride optical waveguide integrated with Si p-i-n diodes for light emitter and detector Si -i-n二极管集成光发射器和检测器的氮化硅光波导传输特性
First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI: 10.1109/GROUP4.2004.1416706
A. Yamada, M. Sakuraba, J. Murota, K. Wada, L. Kimerling
{"title":"Propagation characteristics of Si nitride optical waveguide integrated with Si p-i-n diodes for light emitter and detector","authors":"A. Yamada, M. Sakuraba, J. Murota, K. Wada, L. Kimerling","doi":"10.1109/GROUP4.2004.1416706","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416706","url":null,"abstract":"For light propagation in Si nitride optical waveguides with various width, bending loss is evaluated, and the bending radius dependence is clarified using a pair of Si p-i-n diodes integrated on Si substrate.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114084180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Growth and characterization of Si-based light-emitting diode with /spl beta/-FeSi/sub 2/ active region by molecular beam epitaxy 分子束外延生长/spl β /-FeSi/亚2/活性区硅基发光二极管及表征
First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI: 10.1109/GROUP4.2004.1416635
T. Suemasu, M. Takauji, T. Sunohara, C. Li, F. Hasegawa
{"title":"Growth and characterization of Si-based light-emitting diode with /spl beta/-FeSi/sub 2/ active region by molecular beam epitaxy","authors":"T. Suemasu, M. Takauji, T. Sunohara, C. Li, F. Hasegawa","doi":"10.1109/GROUP4.2004.1416635","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416635","url":null,"abstract":"Si p-n junction light-emitting diodes with /spl beta/-FeSi/sub 2/ particles and with a /spl beta/-FeSi/sub 2/ continuous film active region were grown on Si(001) and Si(111) substrates, respectively, by molecular beam epitaxy and the electroluminescence properties were investigated.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114797254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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