在Si PIN结构中嵌入Ge点的新型太阳能电池

First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI:10.1109/GROUP4.2004.1416698

N. Usami, A. Arnold, K. Fujiwara, K. Nakjima, T. Yokoyama, Y. Shiraki

{"title":"在Si PIN结构中嵌入Ge点的新型太阳能电池","authors":"N. Usami, A. Arnold, K. Fujiwara, K. Nakjima, T. Yokoyama, Y. Shiraki","doi":"10.1109/GROUP4.2004.1416698","DOIUrl":null,"url":null,"abstract":"Stacked Ge dots are embedded in the intrinsic layer of Si-based PIN solar cells to improve the device performance. Relationship between structural parameters and photovoltaic properties is discussed through systematic variation of the repetition number of stacked Ge dots and Si spacer width to separate Ge dots.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"New solar cells using Ge dots embedded in Si PIN structures\",\"authors\":\"N. Usami, A. Arnold, K. Fujiwara, K. Nakjima, T. Yokoyama, Y. Shiraki\",\"doi\":\"10.1109/GROUP4.2004.1416698\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Stacked Ge dots are embedded in the intrinsic layer of Si-based PIN solar cells to improve the device performance. Relationship between structural parameters and photovoltaic properties is discussed through systematic variation of the repetition number of stacked Ge dots and Si spacer width to separate Ge dots.\",\"PeriodicalId\":299690,\"journal\":{\"name\":\"First IEEE International Conference on Group IV Photonics, 2004.\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"First IEEE International Conference on Group IV Photonics, 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2004.1416698\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"First IEEE International Conference on Group IV Photonics, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2004.1416698","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

在硅基PIN太阳能电池的本构层中嵌入堆叠的Ge点，以提高器件性能。通过系统地改变堆叠Ge点的重复次数和分离Ge点的Si间隔宽度，讨论了结构参数与光伏性能之间的关系。

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New solar cells using Ge dots embedded in Si PIN structures

Stacked Ge dots are embedded in the intrinsic layer of Si-based PIN solar cells to improve the device performance. Relationship between structural parameters and photovoltaic properties is discussed through systematic variation of the repetition number of stacked Ge dots and Si spacer width to separate Ge dots.

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First IEEE International Conference on Group IV Photonics, 2004.

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