2022 IEEE 15th Workshop on Low Temperature Electronics (WOLTE)最新文献

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Integration of QKD Technologies in Advanced Optical Networks QKD技术在先进光网络中的集成
2022 IEEE 15th Workshop on Low Temperature Electronics (WOLTE) Pub Date : 2022-06-06 DOI: 10.1109/WOLTE55422.2022.9882652
A. Gatto, M. Ferrari, M. Brunero, Alessandro Gagliano, A. Tarable, Dileepsai Bodanapu, A. Giorgetti, N. Andriolli, Rudi Paganelli, L. Strambini, P. Martelli, M. Martinelli
{"title":"Integration of QKD Technologies in Advanced Optical Networks","authors":"A. Gatto, M. Ferrari, M. Brunero, Alessandro Gagliano, A. Tarable, Dileepsai Bodanapu, A. Giorgetti, N. Andriolli, Rudi Paganelli, L. Strambini, P. Martelli, M. Martinelli","doi":"10.1109/WOLTE55422.2022.9882652","DOIUrl":"https://doi.org/10.1109/WOLTE55422.2022.9882652","url":null,"abstract":"The coexistence of QKD and classical communication systems is described, identifying the principal limitations to its practical realization. The relevance of SDN as a suitable approach for a real integration between QKD and WDM networks is presented, together with the description of novel rateless error correcting codes (ECC) suitable for QKD reconciliation. Preliminary experimental results on a discrete-variable QKD field trial, over production optical fibers deployed in the metropolitan area of Turin in presence of high-bitrate classic channels, are reported. Stable performance on a week-long interval is demonstrated, showing the capabilities of QKD in short/medium reach optical networks. This work is part of the activities of the PON project “Development of quantum systems and technologies for IT security in communication networks” (QUANCOM) which aims to the realization of a metropolitan quantum communication network through the collaboration between universities, research centers and companies operating in the communication market area.","PeriodicalId":299229,"journal":{"name":"2022 IEEE 15th Workshop on Low Temperature Electronics (WOLTE)","volume":"153 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123602956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultra-low noise, temperature compensated amplifier characterization with cryogenic load 低温负载下的超低噪声、温度补偿放大器特性
2022 IEEE 15th Workshop on Low Temperature Electronics (WOLTE) Pub Date : 2022-06-06 DOI: 10.1109/WOLTE55422.2022.9882863
Manuel González, D. PRELE, Si Chen
{"title":"Ultra-low noise, temperature compensated amplifier characterization with cryogenic load","authors":"Manuel González, D. PRELE, Si Chen","doi":"10.1109/WOLTE55422.2022.9882863","DOIUrl":"https://doi.org/10.1109/WOLTE55422.2022.9882863","url":null,"abstract":"We present the characterization of an ultra-low noise, temperature compensated amplifier, designed for superconducting quantum interference devices (SQUID) readout. A cryogenic input load was used to emulate the output impedance of the SQUID and to perform the noise characterization of the LNA in input matched condition. White noise levels below $0.5, text{nV} /sqrt {text{Hz}}$ were measured for this room temperature LNA. The temperature compensation design of the LNA was also tested by measuring the linearity and frequency response of the LNA cooled down to 77K. We obtain identical gain and bandwidth, showing an excellent rejection of thermal drift up to more than 20MHz.","PeriodicalId":299229,"journal":{"name":"2022 IEEE 15th Workshop on Low Temperature Electronics (WOLTE)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127396764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cryogenic Calorimetric Signal Readout with 180nm CMOS at 20 mK 低温量热信号读出180nm CMOS在20 mK
2022 IEEE 15th Workshop on Low Temperature Electronics (WOLTE) Pub Date : 2022-06-06 DOI: 10.1109/WOLTE55422.2022.9882640
R. Huang, D. Gnani, C. Grace, Y. Kolomensky, Y. Mei, A. Papadopoulou
{"title":"Cryogenic Calorimetric Signal Readout with 180nm CMOS at 20 mK","authors":"R. Huang, D. Gnani, C. Grace, Y. Kolomensky, Y. Mei, A. Papadopoulou","doi":"10.1109/WOLTE55422.2022.9882640","DOIUrl":"https://doi.org/10.1109/WOLTE55422.2022.9882640","url":null,"abstract":"We present a demonstration of readout of physical cryogenic calorimetric signals from 20 mK with a two-stage amplifier using 180 nm CMOS technology placed at 20 mK and 700 mK. We observe a number of cryogenic effects in 180 nm CMOS that deviate from typical warm behavior, which are not prohibitive to their cryogenic operation but whose potential impacts we discuss. This represents a new step towards the viability of cryogenic electronics using 180 nm CMOS in cryogenic calorimetric experiments.","PeriodicalId":299229,"journal":{"name":"2022 IEEE 15th Workshop on Low Temperature Electronics (WOLTE)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131884025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
WOLTE 2022 Cover Page WOLTE 2022封面页
2022 IEEE 15th Workshop on Low Temperature Electronics (WOLTE) Pub Date : 2022-06-06 DOI: 10.1109/wolte55422.2022.9882735
{"title":"WOLTE 2022 Cover Page","authors":"","doi":"10.1109/wolte55422.2022.9882735","DOIUrl":"https://doi.org/10.1109/wolte55422.2022.9882735","url":null,"abstract":"","PeriodicalId":299229,"journal":{"name":"2022 IEEE 15th Workshop on Low Temperature Electronics (WOLTE)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114303447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Superconducting Microbridges for large area single photon detectors 用于大面积单光子探测器的超导微桥
2022 IEEE 15th Workshop on Low Temperature Electronics (WOLTE) Pub Date : 2022-06-06 DOI: 10.1109/WOLTE55422.2022.9882683
D. Salvoni, L. Parlato, Chianese Federico, M. Ejrnaes, C. Bruscino, P. Ercolano, R. Satariano, C. Cirillo, A. Cassinese, Attanasio Carmine, G. Pepe
{"title":"Superconducting Microbridges for large area single photon detectors","authors":"D. Salvoni, L. Parlato, Chianese Federico, M. Ejrnaes, C. Bruscino, P. Ercolano, R. Satariano, C. Cirillo, A. Cassinese, Attanasio Carmine, G. Pepe","doi":"10.1109/WOLTE55422.2022.9882683","DOIUrl":"https://doi.org/10.1109/WOLTE55422.2022.9882683","url":null,"abstract":"In this work we discuss the result of the fabrication with photolithography process of microstrips made of MoSi/Al superconducting films, with different widths and patterns suitable for single photon detection. The different designs presented are adopted to increase the sensitive area.","PeriodicalId":299229,"journal":{"name":"2022 IEEE 15th Workshop on Low Temperature Electronics (WOLTE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128478721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A system design approach toward integrated cryogenic quantum control systems 集成低温量子控制系统的系统设计方法
2022 IEEE 15th Workshop on Low Temperature Electronics (WOLTE) Pub Date : 2022-06-06 DOI: 10.1109/WOLTE55422.2022.9882790
M. Prathapan, P. Mueller, David Heim, Maria Vittoria Oropallo, M. Brändli, P. Francese, M. Kossel, A. Ruffino, C. Zota, E. Cha, T. Morf
{"title":"A system design approach toward integrated cryogenic quantum control systems","authors":"M. Prathapan, P. Mueller, David Heim, Maria Vittoria Oropallo, M. Brändli, P. Francese, M. Kossel, A. Ruffino, C. Zota, E. Cha, T. Morf","doi":"10.1109/WOLTE55422.2022.9882790","DOIUrl":"https://doi.org/10.1109/WOLTE55422.2022.9882790","url":null,"abstract":"In this paper, we provide a system level perspective on the design of control electronics for large scale quantum systems. Quantum computing systems with high-fidelity control and readout, coherent coupling, calibrated gates, and reconfigurable circuits with low error rates are expected to have superior quantum volumes. Cryogenic CMOS plays a crucial role in the realization of scalable quantum computers, by minimizing the feature size, lowering the cost, power consumption, and implementing low latency error correction. Our approach toward achieving scalable feed-back based control systems includes the design of memory based arbitrary waveform generators (AWG’s), wide band radio frequency analog to digital converters, integrated amplifier chain, and state discriminators that can be synchronized with gate sequences. Digitally assisted designs, when implemented in an advanced CMOS node such as 7 nm can reap the benefits of low power due to scaling. A qubit readout chain demands several amplification stages before the digitizer. We propose the co-integration of our in-house developed InP HEMT LNAs with CMOS LNA stages to achieve the required gain at the digitizer input with minimal area. Our approach using high impedance matching between the HEMT LNA and the cryogenic CMOS receiver can relax the design constraints of an inverter-based CMOS LNA, paving the way toward a fully integrated qubit readout chain. The qubit state discriminator consists of a digital signal processor that computes the qubit state from the digitizer output and a pre-determined threshold. The proposed system realizes feedback-based optimal control for error mitigation and reduction of the required data rate through the serial interface to room temperature electronics.","PeriodicalId":299229,"journal":{"name":"2022 IEEE 15th Workshop on Low Temperature Electronics (WOLTE)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132701894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
New way to manage high density signal connections and the small power of sub-K cryo-generators 管理高密度信号连接和亚k低温发生器小功率的新方法
2022 IEEE 15th Workshop on Low Temperature Electronics (WOLTE) Pub Date : 2022-06-06 DOI: 10.1109/WOLTE55422.2022.9882775
J. Sauvageot, A. Olivier, J. Charbonnier, X. de la Broïse, C. Thomas, G. Gay, S. David, F. Gustavo, T. Charvolin
{"title":"New way to manage high density signal connections and the small power of sub-K cryo-generators","authors":"J. Sauvageot, A. Olivier, J. Charbonnier, X. de la Broïse, C. Thomas, G. Gay, S. David, F. Gustavo, T. Charvolin","doi":"10.1109/WOLTE55422.2022.9882775","DOIUrl":"https://doi.org/10.1109/WOLTE55422.2022.9882775","url":null,"abstract":"The small power of cryo-generators at sub-K temperature is a strong bottleneck for large sub-K experiments, such as large spatial spectro-imagers for astrophysics, or qubits arrays for quantic computing. It is even very often the limitation to the number of channels of the experiments.To tackle this, we have developed a very innovative hybridization technology allowing the interconnections, by a large number of links, of two devices (typically a sub-K detector and the first stage of its readout electronics) cooled at different temperatures (typically 50 mK and 0.3 – 1 K). These hybridizations present a very low electrical resistance and an extremely high thermal resistance, unmatched by existing technologies, thanks to a multilayer superconducting metallization technology.The very low thermal conduction (much lower than the phonon conduction in a homogeneous superconducting material) is obtained thanks to an acoustic mismatch between layers. The link is ultra-compact (≃ μm) and with ultra-low electrical impedance thanks to the use of superconducting materials only. It can be used to interconnect devices, for example when associated with ball hybridization, or inside the elementary cells of low temperature detectors, for example to separate the two functions of absorption and thermometry. So this new process could transform drastically, in the future, the architecture of nearly all sub-K instrumentations.We have already realized such device at the Plateforme Technologique Amont (PTA) Grenoble facility. Measurements in the sub-K range demonstrate very interesting thermal performances. In this paper, we present the principle behind this thermal property of this Multi-Layer, the first results, and the perspectives.","PeriodicalId":299229,"journal":{"name":"2022 IEEE 15th Workshop on Low Temperature Electronics (WOLTE)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134166540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Functional flexible cables for cryogenic quantum systems 低温量子系统的功能性柔性电缆
2022 IEEE 15th Workshop on Low Temperature Electronics (WOLTE) Pub Date : 2022-06-06 DOI: 10.1109/WOLTE55422.2022.9882671
Shu-Na Wang, Wenbin Jiang, Huiqin Yu, Pusheng Yuan, Lingyun Li, Zhirong Lin, L. You
{"title":"Functional flexible cables for cryogenic quantum systems","authors":"Shu-Na Wang, Wenbin Jiang, Huiqin Yu, Pusheng Yuan, Lingyun Li, Zhirong Lin, L. You","doi":"10.1109/WOLTE55422.2022.9882671","DOIUrl":"https://doi.org/10.1109/WOLTE55422.2022.9882671","url":null,"abstract":"The interconnection between cryogenic quantum chips and room temperature measurement and control systems is a critical issue for quantum computing. In this paper, integrated filtering cryogenic flexible cables are designed to suppress external noise for the transmission of weak and high-frequency signal between low temperature and room temperature. They are made of flexible substrate (PI or LCP) with good flexibility and high integration, and lower heat loss than typical cryogenic coaxial cables. The low-pass filter is integrated in the cable with changing the line width, and the high-frequency noise can be effectively suppressed.","PeriodicalId":299229,"journal":{"name":"2022 IEEE 15th Workshop on Low Temperature Electronics (WOLTE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125874898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Theoretical Prediction on Temperature Dependence of Diffusion Coefficient of Various SiC Nanowires 不同SiC纳米线扩散系数温度依赖性的理论预测
2022 IEEE 15th Workshop on Low Temperature Electronics (WOLTE) Pub Date : 2022-06-06 DOI: 10.1109/WOLTE55422.2022.9882545
Y. Omura
{"title":"Theoretical Prediction on Temperature Dependence of Diffusion Coefficient of Various SiC Nanowires","authors":"Y. Omura","doi":"10.1109/WOLTE55422.2022.9882545","DOIUrl":"https://doi.org/10.1109/WOLTE55422.2022.9882545","url":null,"abstract":"This study theoretically predicts the diffusion coefficient (DSiC) of three-different SiC nanowires (3C-SiC, 4H-SiC, and 6H-SiC). A statistical mechanics based theoretical model is shown that can calculate the diffusion coefficient. Since the primary part of the model is based on Boltzmann’s statistics, the calculations are performed for temperatures higher than 100 K. It is strongly suggested that the crystalline structure influences diffusion coefficient characteristics, and that the multi-band transport should be taken into account in order to properly evaluate the diffusion coefficient. The diffusion coefficient of 4H-SiC wires is not sensitive to temperature, as well as wire width at low temperatures. These characteristics are compared with those of 3C-SiC, 6H-SiC, Ge and Si wires. Detailed discussed show how the crystalline structure and the energy band structure influence the characteristics of the diffusion coefficient.","PeriodicalId":299229,"journal":{"name":"2022 IEEE 15th Workshop on Low Temperature Electronics (WOLTE)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122467912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
QKD-Secure ETSI MEC
2022 IEEE 15th Workshop on Low Temperature Electronics (WOLTE) Pub Date : 2022-06-06 DOI: 10.1109/WOLTE55422.2022.9882872
C. Cicconetti, M. Conti, Andrea Passarella
{"title":"QKD-Secure ETSI MEC","authors":"C. Cicconetti, M. Conti, Andrea Passarella","doi":"10.1109/WOLTE55422.2022.9882872","DOIUrl":"https://doi.org/10.1109/WOLTE55422.2022.9882872","url":null,"abstract":"Edge computing is a leading trend in the deployment of computation and networking infrastructures, where processing is done closer to the users, compared to more traditional cloud-based solutions relying on remote data centers. On the other hand, Quantum Key Distribution (QKD) technologies, offering unconditional security between the communicating parties, is expected to become affordable in the near future and it will unlock new opportunities, e.g., for applications with long-term confidentiality requirements. In this paper we study how to enable ETSI ISG QKD key delivery within an ETSI MEC edge computing scenario, in the practical use case of cloud-native applications based on Function-as-a-Service (FaaS). This work is part of the activities of the PON project “Development of quantum systems and technologies for IT security in communication networks” (QUANCOM) which aims to the realization of a metropolitan quantum communication network through the collaboration between universities, research centers and companies operating in the communication market area.","PeriodicalId":299229,"journal":{"name":"2022 IEEE 15th Workshop on Low Temperature Electronics (WOLTE)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131600280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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