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2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)最新文献

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Physics, Characterization and Modeling of RF Linearity in SiGe HBT and FinFET Technologies SiGe HBT和FinFET技术中射频线性度的物理、表征和建模
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2022-10-16 DOI: 10.1109/BCICTS53451.2022.10051757
G. Niu
{"title":"Physics, Characterization and Modeling of RF Linearity in SiGe HBT and FinFET Technologies","authors":"G. Niu","doi":"10.1109/BCICTS53451.2022.10051757","DOIUrl":"https://doi.org/10.1109/BCICTS53451.2022.10051757","url":null,"abstract":"This paper presents transistor physics underlying distortion in RF SiGe HBTs and FinFETs, their experimental characterization and modeling, particularly the sweet spots, i.e., the VBE/VGS at which RF linearity peaks and its VCE/VDS dependence. For SiGe HBTs, collector-base junction capacitance and avalanche nonlinearities are most important besides the \"intrinsic\" exponential transconductance nonlinearity. For FinFETs, both the transconductance and output conductance nonlinearities are important. A sweet spot also occurs in both HBTs and FinFETs when dominant nonlinearities cancel. FinFETs have the advantage of operating with high fT , high fmax and high IP3 at very high gm/IDS desired for low power RF design. Techniques for reducing or removing distortions of instruments including RF sources and receivers are discussed, including an example of using X-parameters for highly linear common-base SiGe HBTs.","PeriodicalId":289208,"journal":{"name":"2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114631306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Highly-Linear InP/GaAsSb DHBTs with 18.2 dBm OIP3 at 45 GHz: Comparison of Common-Base and Common-Emitter Structures 45 GHz下18.2 dBm OIP3的高线性InP/GaAsSb dhbt:共基和共发射结构的比较
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2022-10-16 DOI: 10.1109/BCICTS53451.2022.10051732
S. Hamzeloui, F. Ciabattini, A. Arabhavi, W. Quan, D. Marti, M. Ebrahimi, O. Ostinelli, C. Bolognesi
{"title":"Highly-Linear InP/GaAsSb DHBTs with 18.2 dBm OIP3 at 45 GHz: Comparison of Common-Base and Common-Emitter Structures","authors":"S. Hamzeloui, F. Ciabattini, A. Arabhavi, W. Quan, D. Marti, M. Ebrahimi, O. Ostinelli, C. Bolognesi","doi":"10.1109/BCICTS53451.2022.10051732","DOIUrl":"https://doi.org/10.1109/BCICTS53451.2022.10051732","url":null,"abstract":"Abstract— Linear power amplifiers (PAs) are critical in high-capacity modern telecom systems. We characterize the linearity of common-emitter (CE) and common-base (CB) mm-wave InP/GaAsSb double heterojunction bipolar transistors (DHBTs) at 18/45 GHz. When matched for maximum linearity, 3rd order intercepts (OIP3) of 23.4 and 18.2 dBm are found in single-finger (0.3 × 10) μm2 CE-DHBTs at 18 and 45 GHz. For CB-DHBTs, the OIP3 is 21.1 and 5 dBm at 18 and 45 GHz. Small-signal load-pull linearity and large-signal power contours of CE-DHBTs show overlapping regions of high output power and linearity near 50 Ω, making them devices well-suited to the development of highly linear power amplifiers (PAs). The effect of device bias on linearity is also examined. The ACLR performance of CE devices meets 5G NR requirements. At 94 GHz, CE and CB devices deliver PSAT = 11.3 and 10.6 dBm, respectively with PAEs of 28.5 and 23.2 %.","PeriodicalId":289208,"journal":{"name":"2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133699995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Characterization of Dynamic Large-Signal Operating Limits and Long-Term RF Reliability of SiGe HBTs SiGe HBTs动态大信号工作极限和长期射频可靠性的表征
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2022-10-16 DOI: 10.1109/BCICTS53451.2022.10051735
Christoph Weimer, Xiaodi Jin, G. Fischer, M. Schröter
{"title":"Characterization of Dynamic Large-Signal Operating Limits and Long-Term RF Reliability of SiGe HBTs","authors":"Christoph Weimer, Xiaodi Jin, G. Fischer, M. Schröter","doi":"10.1109/BCICTS53451.2022.10051735","DOIUrl":"https://doi.org/10.1109/BCICTS53451.2022.10051735","url":null,"abstract":"The dynamic (RF) large-signal operating limits of advanced SiGe HBTs are systematically explored and discussed. Experimental results of long-term RF stress tests performed with a passive load-pull system are presented and analyzed. The experimental data demonstrate that SiGe HBTs are extremely robust and can be operated statically and dynamically far beyond the open-base collector-emitter breakdown voltage without noticeable degradation during the long stress times. The results suggest that only extremely non-linear large-signal operating conditions cause significant degradation of the admittance parameters. RF stress tests of HBTs with different emitter widths suggest that the measured degradation is area-related and can be attributed to the minority carrier charge storage and transport.","PeriodicalId":289208,"journal":{"name":"2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134101530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Modeling Dynamic Lateral Current Crowding in SiGe HBTs SiGe HBTs动态横向电流拥挤建模
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2022-10-16 DOI: 10.1109/BCICTS53451.2022.10051745
Sandip Ghosh, Shon Yadav, A. Chakravorty
{"title":"Modeling Dynamic Lateral Current Crowding in SiGe HBTs","authors":"Sandip Ghosh, Shon Yadav, A. Chakravorty","doi":"10.1109/BCICTS53451.2022.10051745","DOIUrl":"https://doi.org/10.1109/BCICTS53451.2022.10051745","url":null,"abstract":"A modified physics-based two-section model is proposed to accurately capture the lateral non-quasi-static effect in SiGe HBTs. A methodology is proposed to include the DC emitter current crowding effect in the existing two-section model framework. The proposed two-section model is implemented in Verilog-A. The large-signal transient and the small-signal AC simulations are carried out and the results are compared with the numerical device simulation data. The proposed model is observed to perform better than the existing two-section model and the state-of-the-art standard model from the perspectives of small-signal frequency-domain characteristics and large-signal transients.","PeriodicalId":289208,"journal":{"name":"2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"28 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134511343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance vs. Reliability Tradeoffs of Medium Breakdown and High Performance Cascode Amplifier Cells 中击穿和高性能级联放大器单元的性能与可靠性权衡
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2022-10-16 DOI: 10.1109/BCICTS53451.2022.10051731
Harrison P. Lee, Arya Moradinia, Jeffrey W. Teng, Nelson E. Sepulveda-Ramos, J. Cressler
{"title":"Performance vs. Reliability Tradeoffs of Medium Breakdown and High Performance Cascode Amplifier Cells","authors":"Harrison P. Lee, Arya Moradinia, Jeffrey W. Teng, Nelson E. Sepulveda-Ramos, J. Cressler","doi":"10.1109/BCICTS53451.2022.10051731","DOIUrl":"https://doi.org/10.1109/BCICTS53451.2022.10051731","url":null,"abstract":"The purpose of this work is to investigate the performance-reliability tradeoffs of cascode amplifier cells operating under high output voltage swing using both high performance (HP) and medium breakdown (MB) devices in the common base stage. This study combines single-device DC characterization with DC, small-signal, and large-signal RF measurement of cascode amplifier cells, to demonstrate similar performance between MB and HP cascodes. Stress measurements, which combine aggressive device biasing with large output swing, demonstrate improved reliability for MB cascodes under high voltage swing, as well as improved reliability for HP cascodes under high current swing. It is shown that large devices maximize reliability and performance, that MB devices should be chosen for applications utilizing high voltage swing, and HP devices should be chosen for applications with high current swing.","PeriodicalId":289208,"journal":{"name":"2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127994496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Review of Physics-based Modeling of Millimeter-Wave Transistors 毫米波晶体管物理建模研究进展
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2022-10-16 DOI: 10.1109/BCICTS53451.2022.10051746
Soheil Nouri, Amirreza Ghadimi Avval, S. El-Ghazaly
{"title":"A Review of Physics-based Modeling of Millimeter-Wave Transistors","authors":"Soheil Nouri, Amirreza Ghadimi Avval, S. El-Ghazaly","doi":"10.1109/BCICTS53451.2022.10051746","DOIUrl":"https://doi.org/10.1109/BCICTS53451.2022.10051746","url":null,"abstract":"In this work, a review of millimeter-wave transistors modeling is presented. The physics-based modeling approaches are studied and their advantages over the empirical models are demonstrated. Physics-based models account for the physical phenomena that affect the performance of millimeter-wave devices at high frequencies. Electromagnetic-wave propagation effects and non-linear operations are incorporated in physics-based models utilizing appropriate numerical strategies. This makes the modeling approaches predictive over a broad frequency range, under both small- and large-signal analyses and regardless of the device size. Conventional electrode configurations for millimeter-wave transistors are also studied in this work to illustrate the importance of pad layout design in attaining suitable functionality. The necessity of accounting for the device width limitations is also discussed in this work and the transmission line theory is emphasized as a useful tool to address the challenges at higher operating frequencies.","PeriodicalId":289208,"journal":{"name":"2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131559836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 42.5–51.0 GHz SiGe BiCMOS Integrated Tunable Bandpass Filter and Attenuator 42.5-51.0 GHz SiGe BiCMOS集成可调谐带通滤波器和衰减器
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2022-10-16 DOI: 10.1109/BCICTS53451.2022.10051694
Arya Moradinia, Clifford D. Y. Cheon, C. Coen, N. Lourenco, A. Cardoso, J. Cressler
{"title":"A 42.5–51.0 GHz SiGe BiCMOS Integrated Tunable Bandpass Filter and Attenuator","authors":"Arya Moradinia, Clifford D. Y. Cheon, C. Coen, N. Lourenco, A. Cardoso, J. Cressler","doi":"10.1109/BCICTS53451.2022.10051694","DOIUrl":"https://doi.org/10.1109/BCICTS53451.2022.10051694","url":null,"abstract":"This paper presents a 42.5–51.0 GHz integrated tunable bandpass filter and attenuator; hereinafter referred to as a \"filttenuator,\" which is implemented in a 130 nm SiGe BiCMOS process technology. The filttenuator utilizes a tunable bandpass filter with third-order coupled lines and high-Q tunable capacitive loads, a digital step attenuator with a zero-compensation technique, and a loss compensation amplifier to achieve precise amplitude control, tunable frequency, high attenuation range, sharp roll-off, and high rejection. This filttenuator achieves 38 dB worst-case stopband rejection, a sharp roll-off of 66 dB/octave, and a high attenuation range of 31.5 dB, with 1 dB effective steps. To the authors’ best knowledge, the presented filttenuator is the first tunable bandpass filter integrated with a digital step attenuator above 40 GHz demonstrated in silicon.","PeriodicalId":289208,"journal":{"name":"2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114646085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-Performance CMOS TIA for Data Center Optical Interconnects 数据中心光互连的高性能CMOS TIA
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2022-10-16 DOI: 10.1109/BCICTS53451.2022.10051698
K. Lakshmikumar, Alexander Kurylak, R. Nandwana, Bibhu Das, Joe Pampanin, V. Boccuzzi, P. Hanumolu
{"title":"High-Performance CMOS TIA for Data Center Optical Interconnects","authors":"K. Lakshmikumar, Alexander Kurylak, R. Nandwana, Bibhu Das, Joe Pampanin, V. Boccuzzi, P. Hanumolu","doi":"10.1109/BCICTS53451.2022.10051698","DOIUrl":"https://doi.org/10.1109/BCICTS53451.2022.10051698","url":null,"abstract":"An overview of Silicon Photonics and SiGe bipolar TIAs are presented for data center links. CMOS inverter-based TIA circuit topologies for high-bandwidth, low-noise, low-power, and high-linearity are discussed in brief. A design methodology to achieve the best overall receiver sensitivity is presented for a standalone TIA and a TIA codesigned with a DSP. The codesigned TIA methodology is validated using a 106.25 Gbps PAM-4 TIA prototype. Designed in a 16 nm FinFET CMOS process, the TIA with a transimpedance gain of 76 dBΩ has a range of 16 dBΩ. The TIA consumes 103.6 mW, has a -3 dB bandwidth of 18.4 GHz, an input-referred noise of 1.58 µA, and a noise density of 9.7 pA/√Hz.","PeriodicalId":289208,"journal":{"name":"2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"4 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123900097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance Improvement and Layout Design Comparison of AlGaN/GaN HEMT for Ka- Q- and V-band Applications 用于Ka- Q和v波段的AlGaN/GaN HEMT的性能改进和布局设计比较
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2022-10-16 DOI: 10.1109/BCICTS53451.2022.10051740
K. Matsushita, Chih-Yuan Chan, Ju-Hsien Lin, Sheng-Wen Peng, Hung-Kuan Lo, Yu-Syuan Lin, Cheng-Kuo Lin
{"title":"Performance Improvement and Layout Design Comparison of AlGaN/GaN HEMT for Ka- Q- and V-band Applications","authors":"K. Matsushita, Chih-Yuan Chan, Ju-Hsien Lin, Sheng-Wen Peng, Hung-Kuan Lo, Yu-Syuan Lin, Cheng-Kuo Lin","doi":"10.1109/BCICTS53451.2022.10051740","DOIUrl":"https://doi.org/10.1109/BCICTS53451.2022.10051740","url":null,"abstract":"In this paper, we report on AlGaN/GaN HEMT device for Ka-band and Q/V-band applications. The designs of gate electrode are based on 0.12 μm gate length technology (NP12). Performance of the GaN HEMT device by outside source substrate via (OSV) design changed. It experimentally showed that the source inductance of the device influences its fmax characteristic. Using 4x50 μm device, the fmax of 212 GHz, small signal gain of 16dB and 11dB were measured at 30 GHz and 50 GHz, the saturation power density of 4.9 W/mm and maximum power-added efficiency (PAE) of 55% were achieved at 29GHz.","PeriodicalId":289208,"journal":{"name":"2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"281 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123068710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
SLCFET Amplifier Performance Improvements Using an ALD TiN T-Gate Process 利用ALD TiN t栅工艺改进SLCFET放大器性能
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2022-10-16 DOI: 10.1109/BCICTS53451.2022.10051706
T. Vasen, Brian Novak, Marc Scimonelli, K. Frey, Mustapha Saad, Abbey Saia, B. Grisafe, Ken A. Nagamatsu, Josephine B. Chang, V. Wheeler, K. Hobart, A. Koehler, P. Shea, S. V. Campen, R. Howell, S. Afroz
{"title":"SLCFET Amplifier Performance Improvements Using an ALD TiN T-Gate Process","authors":"T. Vasen, Brian Novak, Marc Scimonelli, K. Frey, Mustapha Saad, Abbey Saia, B. Grisafe, Ken A. Nagamatsu, Josephine B. Chang, V. Wheeler, K. Hobart, A. Koehler, P. Shea, S. V. Campen, R. Howell, S. Afroz","doi":"10.1109/BCICTS53451.2022.10051706","DOIUrl":"https://doi.org/10.1109/BCICTS53451.2022.10051706","url":null,"abstract":"The super-lattice castellated field-effect transistor (SLCFET) is a multi-channel AlGaN/GaN HEMT device emerging as a technology platform for RF front ends, integrating world-class RF switches with high-performance RF amplifiers on the same wafer. This paper reports the performance results of a SLCFET amplifier device using an ALD TiN T-gate, which are improved with respect to previously reported data, with measured ft and fmax up to 99 and 152 GHz respectively. The improvement is attributed to a reduced gate capacitance due to a higher T-gate hat without significant penalty of loss in gate control or increase of gate resistance. We also report W-band (94 GHz) large signal load-pull performance of the device with 4.33 W/active mm output power and 19.2% PAE. The process also demonstrates excellent DC/RF dispersion gate lag <1% and drain lag <2% and high breakdown voltage of 55 V.","PeriodicalId":289208,"journal":{"name":"2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"160 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128958613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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