2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)最新文献_第4页

Impact of Layout Parasitics and Thermal Coupling on PA performance and ruggedness in SiGe HBTs 布局寄生和热耦合对SiGe HBTs聚苯乙烯性能和坚固性的影响

2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2022-10-16 DOI: 10.1109/BCICTS53451.2022.10051730

S. Sirohi, Beng Woon Lim, Ajay Raman, Frederick A. Anderson

引用次数: 0

A 1.8 GHz to 43 GHz Low Noise Amplifier with 4 dB noise figure in 0.1 µm GaAs Technology 采用 0.1 µm GaAs 技术制造的 1.8 GHz 至 43 GHz 低噪声放大器，噪声系数为 4 dB

2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2022-10-16 DOI: 10.1109/BCICTS53451.2022.10051702

M. Sakalas, P. Sakalas

{"title":"A 1.8 GHz to 43 GHz Low Noise Amplifier with 4 dB noise figure in 0.1 µm GaAs Technology","authors":"M. Sakalas, P. Sakalas","doi":"10.1109/BCICTS53451.2022.10051702","DOIUrl":"https://doi.org/10.1109/BCICTS53451.2022.10051702","url":null,"abstract":"This paper presents an analysis and design of a ultra-wideband 1.8 GHz to 43 GHz Low Noise Amplifier (LNA) in 0.1 µm Gallium Arsenide (GaAs) pseudomorphic High Electron Mobility Transistor (pHEMT) technology from UMS. The feedback-based bandwidth extension techniques is analyzed and based on the outcome, a two stage LNA is designed. The impedance fine-tuning is implemented by using Transmission Line (TL) structures. The measured performance shows a good agreement with simulation results and an outstanding wideband noise matching. The measured small signal gain was 12 dB, whereas a 3 dB gain flatness in range from 1.8 - 43 GHz was reached. The noise figure was below 4 dB almost all over the entire frequency band of 1.8 GHz to 43 GHz, the output power at 1 dB compression point was 6 dBm and the DC power consumption was 95 mW. To the best knowledge of the authors the designed LNA outperforms the State of the Art (SotA) reported LNA designs in terms of combined parameters of noise figure within the addressed ultra-wide 3 dB bandwidth, linearity and DC power consumption.","PeriodicalId":289208,"journal":{"name":"2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131550081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Broadband 0.4-4 THz Generation in 90nm SiGe BiCMOS 90nm SiGe BiCMOS的0.4-4太赫兹宽带生成

2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2022-10-16 DOI: 10.1109/BCICTS53451.2022.10051756

Sidharth Thomas, Sam Razavian, Wei‐Che Sun, Anthony D. Kim, Yu Ping Wu, B. Williams, A. Babakhani

引用次数: 3

Lumped Ultra-Broadband Linear Driver in 130 nm SiGe SG13G3 Technology 130 nm SiGe SG13G3技术的集总超宽带线性驱动器

2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2022-10-16 DOI: 10.1109/BCICTS53451.2022.10051703

Festim Iseini, A. Malignaggi, F. Korndörfer, M. Inac, G. Kahmen

{"title":"Lumped Ultra-Broadband Linear Driver in 130 nm SiGe SG13G3 Technology","authors":"Festim Iseini, A. Malignaggi, F. Korndörfer, M. Inac, G. Kahmen","doi":"10.1109/BCICTS53451.2022.10051703","DOIUrl":"https://doi.org/10.1109/BCICTS53451.2022.10051703","url":null,"abstract":"In this paper, a fully differential lumped linear driver for optical modulators using the novel high performance 130 nm IHP SG13G3 BiCMOS technology, featuring ft/fmax of 470 / 650 GHz, is presented. The amplifier is composed of two stages, an input variable gain stage and an output cascode stage. Peaking inductors in both stages have been used to flatten the frequency response and increase the bandwidth, while degeneration resistors have been employed for improving the circuit linearity. Measurement results show that the proposed design has a low frequency gain of 18 dB and a 3 dB bandwidth of more than 115 GHz, along with a total harmonic distortion at 1 dB compression of 6 %, an in band group delay variation of ± 0.7 ps and an overall power dissipation of 280 mW. Time domain measurements, limited in speed by the measurement setup, show operation up to 128 Gbps non-return-to-zero and 64 GBaud 4-levels pulse amplitude modulation, together with an output voltage swing at 1 dB compression of 2 Vppd, representing a significant breakthrough in terms of data rate and going beyond the performance of state-of-the-art lumped drivers to be found in literature, thanks to the high performance provided by the SG13G3 IHP technology.","PeriodicalId":289208,"journal":{"name":"2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133357849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Low Loss, High Linearity Switches for Wideband Applications 用于宽带应用的低损耗、高线性开关

2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2022-10-16 DOI: 10.1109/BCICTS53451.2022.10051693

M. Torpey, Austin Tucker

引用次数: 0

Improved Signal Integrity at 64 Gbps in a 130-nm SiGe Optical Receiver With Through-Silicon Vias 在具有硅通孔的130纳米SiGe光接收器中提高64 Gbps的信号完整性

2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2022-10-16 DOI: 10.1109/BCICTS53451.2022.10051734

Ghazal Movaghar, Junqian Liu, James Dalton, Luis A. Valenzuela, C. Schow, Jim Buckwalter

引用次数: 1

Capacitance Engineering of GaN HEMT Technologies with Recessed Field Plate 嵌入式场极板GaN HEMT技术的电容工程

2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2022-10-16 DOI: 10.1109/BCICTS53451.2022.10051733

K. Bothe, M. King, Jia Guo, Yueying Liu, S. Sriram, J. Fisher, S. Sheppard, Basim Noori

引用次数: 0

Design of 20-28 GHz GaAs Phase Shifter MMIC and Small Signal Validation using MVS-GaAs Model 20-28 GHz GaAs移相器MMIC设计及基于MVS-GaAs模型的小信号验证

2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2022-10-16 DOI: 10.1109/BCICTS53451.2022.10051736

Pilsoon Choi, Ryan Fang, Lan Wei, S. Boumaiza, U. Radhakrishna, E. Fitzgerald

引用次数: 0

Thermal impedance of SiGe HBTs: Characterization and modeling SiGe HBTs的热阻抗:表征和建模

2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2022-10-16 DOI: 10.1109/BCICTS53451.2022.10051764

Xiaodi Jin, Guangsheng Liang, Y. Zimmermann, G. Fischer, Christoph Weimer, M. Krattenmacher, Yaxin Zhang, M. Schröter

引用次数: 1

Significance of Equivalent Channel Temperature in Compact Modeling of GaN HEMTs 等效通道温度在GaN hemt致密化建模中的意义

2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2022-10-16 DOI: 10.1109/BCICTS53451.2022.10051754

Sruthi M P, Nidhin K, Ajay Shanbhag, D. Nair, A. Chakravorty, N. Dasgupta, Amitava Das Gupta

{"title":"Significance of Equivalent Channel Temperature in Compact Modeling of GaN HEMTs","authors":"Sruthi M P, Nidhin K, Ajay Shanbhag, D. Nair, A. Chakravorty, N. Dasgupta, Amitava Das Gupta","doi":"10.1109/BCICTS53451.2022.10051754","DOIUrl":"https://doi.org/10.1109/BCICTS53451.2022.10051754","url":null,"abstract":"Significant self-heating affects both the performance and reliability of devices. The estimation of maximum temperature (Tmax) and the location of hot-spot in the device is important from the reliability point of view. But it is to be noted that the thermal sub-circuit in any compact model of the device needs to find an equivalent temperature denoted as Teqt in the device instead of Tmax to model the temperature dependence of device electrical parameters. In this paper, we demonstrate the importance of Teqt in compact modeling of devices using well-calibrated TCAD simulation. We compute the thermal resistance from Teqt data for a device which is termed as equivalent thermal resistance (Rth,eqt) and demonstrate its bias independence. Furthermore, we propose the use of Rth,eqt in self-heating compact model for GaN-HEMT by incorporating the Rth,eqt based thermal sub-circuit in an existing drain current compact model. An excellent match was seen between the Rth,eqt based compact model and the measurements whereas maximum temperature based model gives higher device temperature and hence larger drop in current at higher voltages.","PeriodicalId":289208,"journal":{"name":"2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114639044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0