2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)最新文献_第6页

Extraction of Emitter Series Resistance Along With Collector and Thermal Resistances in Silicon Bipolar Transistors 硅双极晶体管中发射极串联电阻及集电极和热电阻的提取

2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2022-10-16 DOI: 10.1109/BCICTS53451.2022.10051753

Farzana Yasmin, A. Chakravorty, N. Dasgupta, A. DasGupta

引用次数: 0

A 29-dBm, 34% PAE E-Band Dual-Input Doherty Power Amplifier Using 40-nm GaN Technology 一种采用40nm GaN技术的29dbm, 34% PAE e波段双输入多尔蒂功率放大器

2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2022-10-16 DOI: 10.1109/BCICTS53451.2022.10051765

T. Nakatani, Mohammad Ali Zolfaghari, Jonmei J. Yan, P. Asbeck

引用次数: 0

Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with fT/fmax of 340/410 GHz fT/fmax为340/410 GHz的90nm BiCMOS工艺下SiGe HBTs的性能改进

2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2022-10-16 DOI: 10.1109/BCICTS53451.2022.10051761

U. Raghunathan, S. Sirohi, V. Ruparelia, P. Sharma, D. Ioannou, V. Jain, H. K. Kakara, S. Gedela, V. Vanukuru, P. Dongmo, C. Luce, R. Hazbun, R. Krishnasamy, J. Hwang, M. Levy, Kristin Welch, S. Liu, B. Cucci, S. Cole, J. Kantarovsky, A. Vallett, I. McCallum-Cook, M. Yu, R. Phelps, A. DiVergilio, A. Sturm, M. Peters, S. Johnson, R. Rassel, M. Lagerquist, M. Kerbaugh, K. Newton, J. Pekarik, Q. Liu

引用次数: 3

Innovative RF Device Technologies for Advanced Information and Communications Network Society 面向先进信息与通信网络社会的创新射频器件技术

2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2022-10-16 DOI: 10.1109/BCICTS53451.2022.10051695

K. Makiyama, Shigeki Yoshida, K. Nakata, Y. Miyamoto

{"title":"Innovative RF Device Technologies for Advanced Information and Communications Network Society","authors":"K. Makiyama, Shigeki Yoshida, K. Nakata, Y. Miyamoto","doi":"10.1109/BCICTS53451.2022.10051695","DOIUrl":"https://doi.org/10.1109/BCICTS53451.2022.10051695","url":null,"abstract":"This paper describes the innovation of RF device technologies for wireless communication. Over the last decade, data traffic on the internet has increased exponentially. In particular, data traffic over wireless networks has exploded due to IoT including mobile phones. Since the 1990s, global wireless communication systems and personal cellular services, have evolved from 1G to 4G in order to meet the huge demand for wireless communication. Recently we are focusing on the research and development of devices and amplifiers for 5G, which is being implemented, and beyond 5G and 6G, which are on the horizon. The 5G system consists of many macro cells and small cells, and its power consumption is enormous. The high efficiency and high- power density of GaN devices decreases the power consumption of the whole system. Up to now, ongoing research on N-polar GaN has demonstrated an extremely high-power and high PAE at W-band. Recently we demonstrated innovative high-k MIS N-polar GaN HEMTs which were fabricated, for the first time, using commercial 4-inch wafer process facilities. We overcame the challenge of developing a vital gate insulating film by incorporating Si LSI material technology. Furthermore, a ScAlN/GaN HEMT with high polarization and lattice-matching is also promising. An AlN/GaN HEMT on AlN substrate achieves high current density without heating up. Heat dissipation technology is a critical method of improving device performance and efficiency. Moreover, we developed a novel passivation technology to control the electric flux lines using dielectric potions as a new engineering method for controlling the electric field of devices. This paper reports these innovative technologies for RF devices and amplifiers.","PeriodicalId":289208,"journal":{"name":"2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129604342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0