2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)最新文献_第2页

Ultrawide Bandgap Nitride Semiconductor Heterojunction Field Effect Transistors 超宽带隙氮化半导体异质结场效应晶体管

2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2022-10-16 DOI: 10.1109/BCICTS53451.2022.10051751

W. Lu

引用次数: 0

A 220-294 GHz Power Amplifier with 10-dBm Psat and 2.2% PAE in 250-nm InP DHBT 一个220-294 GHz功率放大器，10 dbm Psat和2.2% PAE在250纳米InP DHBT

2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2022-10-16 DOI: 10.1109/BCICTS53451.2022.10051755

Teruo Jyo, H. Hamada, M. Nagatani, H. Wakita, Ibrahim Abdo, M. Mutoh, Y. Shiratori, K. Okada, A. Shirane, Hiroyuki Takahashi

引用次数: 2

A 1-W/mm2, 140-GHz SiGe HBT Power Amplifier using Optimized Embedding Techniques 采用优化嵌入技术的1w /mm2, 140 ghz SiGe HBT功率放大器

2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2022-10-16 DOI: 10.1109/BCICTS53451.2022.10051692

Everett O'Malley, Jim Buckwalter

引用次数: 1

MVSG GaN-HEMT Model: Approach to Simulate Fringing Field Capacitances, Gate Current De-biasing, and Charge Trapping Effects MVSG GaN-HEMT模型:模拟边缘场电容、栅极电流去偏和电荷俘获效应的方法

2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2022-10-16 DOI: 10.1109/BCICTS53451.2022.10051741

Ryan Fang, Dylan Ma, U. Radhakrishna, Lan Wei

{"title":"MVSG GaN-HEMT Model: Approach to Simulate Fringing Field Capacitances, Gate Current De-biasing, and Charge Trapping Effects","authors":"Ryan Fang, Dylan Ma, U. Radhakrishna, Lan Wei","doi":"10.1109/BCICTS53451.2022.10051741","DOIUrl":"https://doi.org/10.1109/BCICTS53451.2022.10051741","url":null,"abstract":"This paper presents new features of the latest MIT Virtual Source GaN-HEMT (MVSG) model covering fringing field capacitances, gate current de-biasing, and charge trapping effects. These model augmentations capture physical device phenomena observed in industry-devices in a robust, computationally efficient fashion. The features enhance simulation accuracy in both HV and RF-circuit applications and is included in the upcoming standard release of the industry-standard MVSG Verilog-A code. Contributions of this work are: (i) Bias-dependent fringing fields that can describe non-linear device-capacitance behavior due to charge-depletion in drain-access region beyond the last field-plate (FP). Previously, this effect was modeled using a \"dummy\" non-physical field-plate. (ii) Assignment of gate-source and gate-drain Schottky diodes to internal source/drain-nodes before and after FPs. Charge-depletion in FPs at high VDS results in transitions in both gate-current (IG) and capacitance (CGG) which can be accurately modeled using the new approach. (iii) Enhanced charge-trapping effects that include drain-lag and gate-lag effects, both capture and emission time-constants and their temperature-dependencies. The model is calibrated against measured transient pulsing data and accurately describes dynamic saturation-current (IDSat), knee-voltage (VKnee) and output-conductance (gDS). New parameters are added in the model to capture the effects and can be extracted from independent measurements.","PeriodicalId":289208,"journal":{"name":"2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132654315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

The Load-Modulated Linearizer: A Technique for Intermodulation Cancellation in PA Systems 负载调制线性器:扩音系统中互调消除技术

2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2022-10-16 DOI: 10.1109/BCICTS53451.2022.10051742

Anton N. Atanasov, Wasam R. A. Mukhtar Ahmad, M. S. O. Alink, F. V. van Vliet

引用次数: 1

Challenges and Potential of N-polar GaN HEMT for beyond 5G Wireless Network 超5G无线网络n极GaN HEMT的挑战与潜力

2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2022-10-16 DOI: 10.1109/BCICTS53451.2022.10051701

Shigeki Yoshida, K. Makiyama, A. Hayasaka, I. Makabe, K. Nakata

{"title":"Challenges and Potential of N-polar GaN HEMT for beyond 5G Wireless Network","authors":"Shigeki Yoshida, K. Makiyama, A. Hayasaka, I. Makabe, K. Nakata","doi":"10.1109/BCICTS53451.2022.10051701","DOIUrl":"https://doi.org/10.1109/BCICTS53451.2022.10051701","url":null,"abstract":"This paper describes the advantages of N-polar GaN HEMT by comparing device characteristics with those of Ga-polar HEMT. The N-polar GaN HEMT epi-structure, which was designed for RF devices, was grown on 4-inch semi-insulating SiC substrate by MOCVD with smooth surface morphology and low sheet resistance non-uniformity of 1.2%. This paper reports, for the first time, N-polar HEMTs which were fabricated using the same 4-inch wafer process facilities and our manufacturing expertise for commercial Ga-polar GaN HEMTs. The reported N-polar GaN HEMT achieved drain current density of 1.74 A/mm and drain conductance of less than 40 mS/mm. Both of these are superior to Ga-polar GaN HEMT. Using hafnium oxide-based dielectrics, high-k gate insulators were developed and achieved a relative permittivity of 17. N-polar GaN HEMTs with these high-k gate insulators were fabricated and these devices reached a sufficient level to be used for high frequency RF power amplifiers. These results indicate that N-polar GaN HEMTs will be the key technology for next generation high power and high frequency power amplifiers.","PeriodicalId":289208,"journal":{"name":"2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129087826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Improved Electrical Reliability and Performance Enhancements in SiGe HBTs Using Dummy BEOL Metal Layers 使用虚拟BEOL金属层改善SiGe hbt的电气可靠性和性能

2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2022-10-16 DOI: 10.1109/BCICTS53451.2022.10051752

Nelson E. Sepulveda-Ramos, Jeffrey W. Teng, Harrison P. Lee, J. Cressler

{"title":"Improved Electrical Reliability and Performance Enhancements in SiGe HBTs Using Dummy BEOL Metal Layers","authors":"Nelson E. Sepulveda-Ramos, Jeffrey W. Teng, Harrison P. Lee, J. Cressler","doi":"10.1109/BCICTS53451.2022.10051752","DOIUrl":"https://doi.org/10.1109/BCICTS53451.2022.10051752","url":null,"abstract":"The present work demonstrates, for the first time, the impact of BEOL design on the electrical reliability of SiGe HBTs. Mixed-mode and high-current stress were performed for four different SiGe HBT variants with different levels of dummy metal layers. The avalanche multiplication factor was found to be insensitive to changes in the BEOL, and thus the classical mixed-mode degradation was similar across all BEOL variants. Meanwhile, high-current stress showed that adding more dummy metal layers alleviated the current gain and base current density degradation by 30% and 100%, respectively. Both the mechanical stress and temperature differences due to additional dummy metal layers were investigated using TCAD simulations. It was found that reduction in temperature due to reduced thermal resistance from dummy metal layers overwhelms stress-driven increases in the Auger generation rate. The present study sheds light on the impacts to reliability when adding dummy metal layers above devices, as well as the potential of intentional dummy BEOL design as a performance enhancement technique for circuit design in a manner that incurs no additional concern for electrical reliability.","PeriodicalId":289208,"journal":{"name":"2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"61 235 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125958518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A 13 GHz PA with Amplitude Modulation for Entanglement Generation in Multi-Qubit 171Yb+ Gates of an Ion-Trapped Quantum Computer 离子阱量子计算机多量子位171Yb+门中纠缠产生的调幅13ghz放大器

2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2022-10-16 DOI: 10.1109/BCICTS53451.2022.10051697

Péter Tóth, Lasse Cordes, V. Issakov

引用次数: 2

Characterization and Modeling of Thermal Coupling in Multi-Finger InP DHBTs 多指InP DHBTs热耦合特性与建模

2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2022-10-16 DOI: 10.1109/BCICTS53451.2022.10051728

Markus Müller, T. Nardmann, Maximilian Froitzheim, M. Schröter

引用次数: 3

Numerical Optimization of On-Resistance and Transconductance in Depletion-Mode and Enhancement-Mode GaN HEMTs 耗尽模式和增强模式GaN hemt导通电阻和跨导的数值优化

2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2022-10-16 DOI: 10.1109/BCICTS53451.2022.10051747

I. Berdalovic, M. Poljak, T. Suligoj

{"title":"Numerical Optimization of On-Resistance and Transconductance in Depletion-Mode and Enhancement-Mode GaN HEMTs","authors":"I. Berdalovic, M. Poljak, T. Suligoj","doi":"10.1109/BCICTS53451.2022.10051747","DOIUrl":"https://doi.org/10.1109/BCICTS53451.2022.10051747","url":null,"abstract":"In this paper, we use a numerical mobility modeling framework for GaN-based high electron mobility transistors (HEMTs) to examine the dependence of important design parameters such as on-resistance and transconductance on the device structure. The model is calibrated by matching previously published experimental mobility data for a depletion-mode AlGaN/AlN/GaN/AlGaN double-heterostructure (DH) HEMT to within ±10%. The structural parameters of the device are optimized and a minimum on-resistance of 541 Ω/□ is achieved with a mole fraction of 0.36 and thickness of 14 nm for the AlGaN barrier. A p-GaN cap is added to the initial structure to achieve enhancement-mode operation, and the impact of cap and barrier thickness on threshold voltage and on-resistance is discussed. The transconductance of enhancement-mode devices at an overvoltage of 8 V is improved from 1.58 to 2.59 mS/□ by simultaneously reducing the thickness of the p-GaN and AlGaN layers, thus increasing the gate capacitance while maintaining the same threshold voltage and on-resistance. The optimization procedure allows to obtain similar design parameters for the enhancement-mode HEMT as for the initial depletion-mode structure, proving that the addition of the p-GaN cap is an efficient way to increase the threshold voltage without compromising device performance.","PeriodicalId":289208,"journal":{"name":"2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115013202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0