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Analytical Surface Potential Calculation for Organic Thin-film Transistors 有机薄膜晶体管表面电位的解析计算
2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI: 10.1109/CAS52836.2021.9604115
Yawar Hayat Zarkob, Shazan Ahmad Bhat, S. A. Ahsan
{"title":"Analytical Surface Potential Calculation for Organic Thin-film Transistors","authors":"Yawar Hayat Zarkob, Shazan Ahmad Bhat, S. A. Ahsan","doi":"10.1109/CAS52836.2021.9604115","DOIUrl":"https://doi.org/10.1109/CAS52836.2021.9604115","url":null,"abstract":"In this work, we present a tenably accurate and computationally efficient analytical calculation of the surface potential in organic thin-film transistors (OTFTs). Double exponential density of states is used to model deep and tail trap states for carrier electrostatics. We employ the Lambert-W function to obtain the analytical surface potential expression. The validity of the obtained expressions is ascertained through a comparison between the numerical and explicit expressions. Furthermore, we also build on a model that was based on Lagrange Reversion theorem and test its validity for different biasing conditions. The proposed model, by virtue of its explicit analytical nature, while preserving the underlying physics, is suitable for the development of surface-potential-based compact models for OTFTs, which can be used for circuit design.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"141 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133391409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Chemically Bath Deposited Sb2S3 Films as Optical Phase Change Materials 化学浴沉积Sb2S3薄膜作为光学相变材料
2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI: 10.1109/CAS52836.2021.9604155
C. Cobianu, M. Gheorghe, M. Modreanu, Y. Gutiérrez, M. Losurdo
{"title":"Chemically Bath Deposited Sb2S3 Films as Optical Phase Change Materials","authors":"C. Cobianu, M. Gheorghe, M. Modreanu, Y. Gutiérrez, M. Losurdo","doi":"10.1109/CAS52836.2021.9604155","DOIUrl":"https://doi.org/10.1109/CAS52836.2021.9604155","url":null,"abstract":"This paper presents the experimental results of laser-induced phase changes in chemically bath deposited (CBD) Sb2S3 films on fused silica glass substrates. The CBD allows conformal coverage of the glass substrate with surface roughness of 21.8 nm as estimated from AFM. As deposited Sb2S3 films show an amorphous-like structure as was revealed by both green laser (λex=514 nm) Raman and FT Raman (λex=1064 nm) spectroscopy. Optical transmittance indicates that the absorption edge in Sb2S3 films is 550 nm and therefore light below this wavelength will be strongly absorbed. Above certain threshold power, 2mW, of green laser (λex=514 nm) we observe that we can trigger an amorphous to crystalline phase transition in Sb2S3 films. Following this transition, we have also observed the appearance of α-Sb2O3 and the metallic Sb in the Sb2S3 films. The changes in optical properties have been investigated by spectroscopic ellipsometry.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126963807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
UV Imprinting Processes for Fabrication of Micro Optical Components 微光学元件制造的UV压印工艺
2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI: 10.1109/CAS52836.2021.9604160
C. Thanner, J. Peter, R. Breyer, M. Begel
{"title":"UV Imprinting Processes for Fabrication of Micro Optical Components","authors":"C. Thanner, J. Peter, R. Breyer, M. Begel","doi":"10.1109/CAS52836.2021.9604160","DOIUrl":"https://doi.org/10.1109/CAS52836.2021.9604160","url":null,"abstract":"UV Nanoimprint Lithography combined with lens molding represent a flexible and low-cost pattern replication technique which was investigated with focus on pattern shape, size and imprinted surface quality. The flexibility of this method in imprinting different shape patterns by means of adjustable base layer thickness as well as the reliable fabrication of high quality surfaces using both standard and high refractive index resins was demonstrated using SmartNIL® processes. The use of a Moiré-type lens master template fabricated by two-photon technology was proven for SmartNIL® replication, providing an attractive solution for both prototyping, as well as high volume manufacturing processes.Finally, the fabrication of large lenses geometry with reliable shape replication for use in microoptical components was proven by means of UV molding processes at wafer level scale.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117042878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design and Fabrication of Fresnel Lenses Array 菲涅耳透镜阵列的设计与制造
2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI: 10.1109/CAS52836.2021.9604163
M. Kusko, A. Avram
{"title":"Design and Fabrication of Fresnel Lenses Array","authors":"M. Kusko, A. Avram","doi":"10.1109/CAS52836.2021.9604163","DOIUrl":"https://doi.org/10.1109/CAS52836.2021.9604163","url":null,"abstract":"In this work is studied the possibility to integrate a Fresnel lens array in a compact infrared spectrometer with the scope of focusing and also spectral filtering the incoming radiation, by using their inherent wavelength dependence. From the simulations results obtained with Beam propagation Method one can obtain a 3X3 array formed of two-level Fresnel lenses presenting good results regarding the focusing efficiency and the spectral response. The lens array have been fabricated by DRIE with good results regarding the etch depth control and the snoothness of the etched surfaces.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121650514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
PLA nanocomposites with antimicrobial action, based on olive fruit polyphenols and citrus fruit extracts encapsulated in Maltodextrin 以麦芽糖糊精封装的橄榄果多酚和柑橘果提取物为基础的抗菌聚乳酸纳米复合材料
2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI: 10.1109/CAS52836.2021.9604116
I. V. Tudose, I. Rosca, C. Romanițan, O. Ionescu, K. Petrotos, S. Zaoutsos, M. Suchea, E. Koudoumas
{"title":"PLA nanocomposites with antimicrobial action, based on olive fruit polyphenols and citrus fruit extracts encapsulated in Maltodextrin","authors":"I. V. Tudose, I. Rosca, C. Romanițan, O. Ionescu, K. Petrotos, S. Zaoutsos, M. Suchea, E. Koudoumas","doi":"10.1109/CAS52836.2021.9604116","DOIUrl":"https://doi.org/10.1109/CAS52836.2021.9604116","url":null,"abstract":"Research for new composite materials with antimicrobial properties suitable for food packing is a challenging subject. This report concerns fabrication of novel poly(lactic acid) (PLA) antimicrobial composite materials incorporating olive fruit polyphenols and citrus fruit extracts and encapsulated in Maltodextrin DE18, using the hot roll mill technique. Composites containing different concentrations of the active compound were produced and pressed into 1mm thick plates and their physical and antimicrobial properties were studied. The study proved that these composite materials presented antimicrobial activity against a Gram-positive bacterial strain, represented by S. aureus, and a Gram-negative bacterial strain, represented by E. coli. The antimicrobial efficiency was found increasing with the concentration of the active material and to be more effective in the Gram-positive bacterial strain.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134349102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Synthesis and photoluminescence study of silicon nanowires obtained by metal assisted chemical etching 金属辅助化学蚀刻硅纳米线的合成及光致发光研究
2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI: 10.1109/CAS52836.2021.9604178
E. Fakhri, M. T. Sultan, A. Manolescu, S. Ingvarsson, N. Plugaru, R. Plugaru, H. Svavarsson
{"title":"Synthesis and photoluminescence study of silicon nanowires obtained by metal assisted chemical etching","authors":"E. Fakhri, M. T. Sultan, A. Manolescu, S. Ingvarsson, N. Plugaru, R. Plugaru, H. Svavarsson","doi":"10.1109/CAS52836.2021.9604178","DOIUrl":"https://doi.org/10.1109/CAS52836.2021.9604178","url":null,"abstract":"Silicon nanowires (SiNWs) hold potential applications in optoelectronics and SiNW-based optical sensors. Here, a photoluminescence study of SiNW arrays fabricated with a simple two-step silver (Ag) catalyzed etching of silicon wafers is presented. The morphology and photoluminescence properties were investigated for SiNWs of different lengths obtained by varying Ag concentration (as silver nitrate, AgNO3) and etching time. The samples consist of vertically aligned SiNWs with length in the range ~10-40 µm. Our foremost result is that the photoluminescence intensity from the SiNW arrays is an order of magnitude higher than that from bulk Si. This is accompanied by a red-shift in the peak position of approximately 0.09 eV, which may be attributed either to the variation in size of the Ag-nanoparticles created during the etching process or different lengths of the SiNWs. The results indicate that SiNWs obtained by simple and cost-effective metal catalyzed etching, are potentially promising for optoelectronic applications.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115421597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
MicroPIV on carbonic materials embedded in a microfluidic device 微流控装置中碳材料的微piv研究
2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI: 10.1109/CAS52836.2021.9604134
E. Chiriac, B. Adiaconiţă, C. Pachiu, M. Avram, C. Balan
{"title":"MicroPIV on carbonic materials embedded in a microfluidic device","authors":"E. Chiriac, B. Adiaconiţă, C. Pachiu, M. Avram, C. Balan","doi":"10.1109/CAS52836.2021.9604134","DOIUrl":"https://doi.org/10.1109/CAS52836.2021.9604134","url":null,"abstract":"In this work we investigated the influence of the carbonic materials Single Layer Graphene, Nanocrystalline Graphite and Graphene Nano Walls on the flow field in a microchannel using the experimental technique micro-Particle Image Velocimetry. The velocity and vorticity distributions show that the presence in the microchannel of the carbonic materials have an important influence and above 300 mbar inlet pressure the average velocity decreases in the NCG and GNW cases compared with SLG.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115487114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Measurement setup and procedure for the accurate determination of the gain and the breakdown voltage for Silicon Photomultiplier (SiPM) Arrays 精确测定硅光电倍增管(SiPM)阵列增益和击穿电压的测量装置和程序
2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI: 10.1109/CAS52836.2021.9604171
Florin-Adrian Popescu, G. Chiritoi, E. M. Popescu
{"title":"Measurement setup and procedure for the accurate determination of the gain and the breakdown voltage for Silicon Photomultiplier (SiPM) Arrays","authors":"Florin-Adrian Popescu, G. Chiritoi, E. M. Popescu","doi":"10.1109/CAS52836.2021.9604171","DOIUrl":"https://doi.org/10.1109/CAS52836.2021.9604171","url":null,"abstract":"The silicon photomultiplier (SiPM) is increasingly used in single-photon or few-photon based applications such as spectroscopy, quantum experiments and distance measurements (LIDAR). Also, it founds its niche in fast timing applications such as time of flight positron emission tomography (TOF-PET) and in high energy physics (HEP). In astrophysics, SiPM arrays find their use in the development of near-UV telescopes for the observation from space of the ultraviolet tracks (290-430 nm) associated with giant extensive air showers produced by ultra-high energy primaries propagating in the earth’s atmosphere with highest time precision. Accurate measurements of detected optical energy rely on the gain and breakdown setup of the SiPMs arrays, as individual cells in the array may require bespoken setting. The present paper presents methods for accurate determination of the breakdown voltage and gain for SiPM arrays.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128517680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mixed-signal adaptive primary side power control 混合信号自适应一次侧功率控制
2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI: 10.1109/CAS52836.2021.9604187
Gheorghe Turcan, N. Braic, M. Neag, M. Topa
{"title":"Mixed-signal adaptive primary side power control","authors":"Gheorghe Turcan, N. Braic, M. Neag, M. Topa","doi":"10.1109/CAS52836.2021.9604187","DOIUrl":"https://doi.org/10.1109/CAS52836.2021.9604187","url":null,"abstract":"In the offline AC-DC power conversion there is a race to make the devices cheaper and more reliable. This trend makes researchers and engineers to look more and more for primary side regulation, as it makes the converter simpler, with less parts and, most importantly, it increases safety of operation through primary and secondary isolation. In this article an adaptable primary side power limiter is proposed and demonstrated. The flexibility of this design is employed to control a secondary side current control constant voltage load such as an LED. The system analysis is focused on the input voltage change rejection and digital linearity control.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125014240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical and structural characterization of thin MoS2 layers on SiO2/Si substrates, towards the development of MoS2/Si heterojunction photovoltaics SiO2/Si衬底上MoS2薄层的光学和结构表征，面向MoS2/Si异质结光伏的发展
2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI: 10.1109/CAS52836.2021.9604140
Bienlo Zerbo, M. Modreanu, I. Povey, A. Létoublon, A. Rolland, L. Pédesseau, J. Even, B. Lépine, P. Turban, P. Schieffer, A. Moreac, O. Durand
{"title":"Optical and structural characterization of thin MoS2 layers on SiO2/Si substrates, towards the development of MoS2/Si heterojunction photovoltaics","authors":"Bienlo Zerbo, M. Modreanu, I. Povey, A. Létoublon, A. Rolland, L. Pédesseau, J. Even, B. Lépine, P. Turban, P. Schieffer, A. Moreac, O. Durand","doi":"10.1109/CAS52836.2021.9604140","DOIUrl":"https://doi.org/10.1109/CAS52836.2021.9604140","url":null,"abstract":"In this paper, we present the first steps of a process toward the development of MoS<inf>2</inf>/Si heterojunctions photovoltaics, using 2D 2H-MoS<inf>2</inf>, whose natural abundance and tunable bandgap make it suitable for such application. A focus is made here on the optimization of the MoS<inf>2</inf> material and its deposition process, through preliminary optical and structural characterizations of thin 2H-MoS<inf>2</inf> layers deposited on 80nm SiO<inf>2</inf> on top of Si (001) substrates. Our investigations revealed oxidation of the MoS<inf>2</inf> layers, and limited longitudinal crystallite size, which may strongly affect the band lineup between MoS<inf>2</inf> and Si, and thus, the performance of the solar cell.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133957785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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