Measurement setup and procedure for the accurate determination of the gain and the breakdown voltage for Silicon Photomultiplier (SiPM) Arrays

Florin-Adrian Popescu, G. Chiritoi, E. M. Popescu
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Abstract

The silicon photomultiplier (SiPM) is increasingly used in single-photon or few-photon based applications such as spectroscopy, quantum experiments and distance measurements (LIDAR). Also, it founds its niche in fast timing applications such as time of flight positron emission tomography (TOF-PET) and in high energy physics (HEP). In astrophysics, SiPM arrays find their use in the development of near-UV telescopes for the observation from space of the ultraviolet tracks (290-430 nm) associated with giant extensive air showers produced by ultra-high energy primaries propagating in the earth’s atmosphere with highest time precision. Accurate measurements of detected optical energy rely on the gain and breakdown setup of the SiPMs arrays, as individual cells in the array may require bespoken setting. The present paper presents methods for accurate determination of the breakdown voltage and gain for SiPM arrays.
精确测定硅光电倍增管(SiPM)阵列增益和击穿电压的测量装置和程序
硅光电倍增管(SiPM)越来越多地用于基于单光子或少光子的应用,如光谱学、量子实验和距离测量(激光雷达)。此外,它在飞行时间正电子发射断层扫描(TOF-PET)和高能物理(HEP)等快速定时应用中也有自己的一席之地。在天体物理学中,SiPM阵列用于近紫外望远镜的开发,用于从太空观测与地球大气中以最高时间精度传播的超高能量初级产生的巨大广泛空气阵雨相关的紫外线轨迹(290-430 nm)。检测到的光能的精确测量依赖于sipm阵列的增益和击穿设置,因为阵列中的单个单元可能需要定制设置。本文介绍了精确测定SiPM阵列击穿电压和增益的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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