Proceedings of 1994 IEEE International Reliability Physics Symposium最新文献_第4页

Reliability mechanism of the unprogrammed amorphous silicon antifuse 非编程非晶硅防熔丝的可靠性机理

Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI: 10.1109/RELPHY.1994.307810

R. Wong, K. Gordon

引用次数: 14

Characterization of wafer charging mechanisms and oxide survival prediction methodology 晶圆充电机制表征及氧化物寿命预测方法

Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI: 10.1109/RELPHY.1994.307816

W. Lukaszek, W. Dixon, M. Vella, C. Messick, S. Reno, J. Shideler

引用次数: 15

Relation between stress-induced leakage current and dielectric breakdown in SiN-based antifuses 应力诱发泄漏电流与介电击穿的关系

Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI: 10.1109/RELPHY.1994.307833

H. Yasuda, N. Ikeda, K. Ham, M. T. Takagi, I. Yoshii

{"title":"Relation between stress-induced leakage current and dielectric breakdown in SiN-based antifuses","authors":"H. Yasuda, N. Ikeda, K. Ham, M. T. Takagi, I. Yoshii","doi":"10.1109/RELPHY.1994.307833","DOIUrl":"https://doi.org/10.1109/RELPHY.1994.307833","url":null,"abstract":"Degradation process of metal-to-metal antifuses which use thin silicon nitride as dielectric layer under high field stress is studied in detail. Prior to dielectric breakdown, leakage current at stress voltage increases with large and complex fluctuations for any sample. So-called stress-induced leakage current at low voltages in current-voltage characteristics is also observed and it increases as the stress continues. It is shown that the stress-induced leakage current and the pre-breakdown leakage current with fluctuations are identical phenomena, and that the stress-induced leakage current strongly relates to the dielectric breakdown. Therefore,it is important to understand the mechanism of the stress-induced leakage current in order to improve antifuse reliabilities. Discrete two-step fluctuations on the stress-induced leakage currents at low voltages are found and the stress-induced leakage current is not proportional to antifuse areas. Considering these findings, it is concluded that the stress-induced leakage current flows through local spots. The conduction mechanism of the stress-induced leakage currents is also studied. The main conduction process in SiN films appears to be Frenkel-Poole conduction. We also find that as the stress continues, the barrier height between an electrode and a SiN film becomes lower and the dielectric constant becomes larger. It is also found that the appearance of the stress-induced leakage current in the I-V characteristics depends on the thickness of the barrier metal. Dielectric breakdown electric field and TDDB lifetime also show the same dependence. Considering the experimental results, the stress-leakage current is related to the electrode material.<<ETX>>","PeriodicalId":276224,"journal":{"name":"Proceedings of 1994 IEEE International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129045264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Ambient moisture characterization of thin small outline packages (TSOPs) 薄型小外形封装(tsop)的环境湿度特性

Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI: 10.1109/RELPHY.1994.307853

M. Prud'homme

引用次数: 2

Built-in reliability through sodium elimination 内置可靠性通过钠消除

Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI: 10.1109/RELPHY.1994.307829

Jeff Chinn, Y. Ho, Mike Chang, Siliconix

引用次数: 7

Change of the failure mode of layered aluminum conductors by modification of overlying dielectric 改变上覆介质对层状铝导体失效模式的影响

Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI: 10.1109/RELPHY.1994.307826

D. Pramanik, V. Chowdhury, V. Jain

引用次数: 2

Building reliability into a high performance 4-level metallization system 构建可靠的高性能4级金属化系统

Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI: 10.1109/RELPHY.1994.307865

M. Dreyer, J. Mobr, T. Zirkie

引用次数: 0

Novel failure analysis techniques using photon probing with a scanning optical microscope 基于扫描光学显微镜的光子探测失效分析新技术

Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI: 10.1109/RELPHY.1994.307808

E. I. Cole, J. Soden, J. L. Rife, D. Barton, C. Henderson

{"title":"Novel failure analysis techniques using photon probing with a scanning optical microscope","authors":"E. I. Cole, J. Soden, J. L. Rife, D. Barton, C. Henderson","doi":"10.1109/RELPHY.1994.307808","DOIUrl":"https://doi.org/10.1109/RELPHY.1994.307808","url":null,"abstract":"Three new failure analysis techniques for integrated circuits (ICs) have been developed using localized photon probing with a scanning optical microscope (SOM). The first two are light-induced voltage alteration (LIVA) imaging techniques that (1) localize open-circuited and damaged junctions and (2) image transistor logic states. The third technique uses the SOM to control logic states optically from the IC backside. LIVA images are produced by monitoring the voltage fluctuations of a constant current power supply as a laser beam is scanned over the IC. High selectivity for localizing defects has been demonstrated using the LIVA approach. Logic state mapping results, similar to previous work using biased optical beam induced current (OBIC) and laser probing approaches, have also been produced using LIVA. Application of the two LIVA based techniques to backside failure analysis has been demonstrated using an infrared laser source. Optical logic state control is based upon earlier work examining transistor response to photon injection. The physics of each method and their applications for failure analysis are described.<<ETX>>","PeriodicalId":276224,"journal":{"name":"Proceedings of 1994 IEEE International Reliability Physics Symposium","volume":"150 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123238617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 63

dv/dt induced latching failure in 1200 V/400 A halfbridge IGBT modules 1200v / 400a半桥IGBT模块中dv/dt引起的锁存故障

Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI: 10.1109/RELPHY.1994.307804

Wu-chen Wu, M. Held, N. Umbricht, A. Birolini

引用次数: 7

The impact of intermetal dielectric layer and high temperature bake test on the reliability of nonvolatile memory devices 金属间介质层及高温烘烤试验对非易失性存储器件可靠性的影响

Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI: 10.1109/RELPHY.1994.307812

E. Sakagami, N. Arai, H. Tsunoda, H. Egawa, Y. Yamaguchi, E. Kamiya, M. Takebuchi, K. Yamada, K. Yoshikawa, S. Mori

引用次数: 11