{"title":"Thermal modeling of through hole capacitors","authors":"J. Rajmond, P. Dan","doi":"10.1109/SIITME.2012.6384381","DOIUrl":"https://doi.org/10.1109/SIITME.2012.6384381","url":null,"abstract":"Through the course of this paper transient thermal conditions were investigated for through hole capacitor models built in SolidWorks. Firstly, the influences of the shape, casing material are determined, after which lifelike models for aluminum electrolytic, ceramic and plastic film capacitors are built and their efficiency regarding forced cooling and thermal power dissipation is investigated.","PeriodicalId":273985,"journal":{"name":"2012 IEEE 18th International Symposium for Design and Technology in Electronic Packaging (SIITME)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115313074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Design considerations for a low power variable gain amplifier for ultrasounds","authors":"O. Dudas, A. Craciun","doi":"10.1109/SIITME.2012.6384377","DOIUrl":"https://doi.org/10.1109/SIITME.2012.6384377","url":null,"abstract":"This paper presents the simulation results and conclusions used to design a variable gain amplifier (VGA) for ultrasounds. It is defined the architecture and implementation of a VGA for a portable system with low power consumption and low noise for a frequency domain of 100 kHz to 4 MHz and a gain variation of 72 dB. The proposed circuit consists on a preamplifier, a switchable active filter and tree stages realized with current feedback amplifiers with variable gain. The circuit was analyzed by simulation to validate its parameters.","PeriodicalId":273985,"journal":{"name":"2012 IEEE 18th International Symposium for Design and Technology in Electronic Packaging (SIITME)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127874738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Software application for monitoring and protection systems in low-voltage distribution systems","authors":"L. Aciu, P. Ogrutan, C. Gerigan","doi":"10.1109/SIITME.2012.6384370","DOIUrl":"https://doi.org/10.1109/SIITME.2012.6384370","url":null,"abstract":"The paper presents a monitoring and alarm system based on GPRS (General Packet Radio Service) communication that can operate within a smart grid type of low voltage power delivery. The software application for that system allows the centralization of events transmitted from consumers to the electrical energy distribution site. The software is called into the paper Power Manager Distribution System (PMDS) on the low voltage side, and provides a graphical interface designed to provide user access to information and the ability to control the software. Organization and recording of events transmitted from consumers to the electrical energy distribution site, is performed using a database providing a centralized effectively.","PeriodicalId":273985,"journal":{"name":"2012 IEEE 18th International Symposium for Design and Technology in Electronic Packaging (SIITME)","volume":"398 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120978751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Analog front-end and signal acquisition via sound channel","authors":"F. Sandu, A. Stanca, A. Pasaroiu, G. Pana","doi":"10.1109/SIITME.2012.6384416","DOIUrl":"https://doi.org/10.1109/SIITME.2012.6384416","url":null,"abstract":"The paper presents hardware and software interfacing to the line-in audio channel standard connection of fixed and mobile computing terminals, for the conditioning and acquisition of out-band signals - the case studies cover mostly lower frequencies [1], with focus on EKG, but higher spectra are also addressed (via sub-coherent under-sampling).","PeriodicalId":273985,"journal":{"name":"2012 IEEE 18th International Symposium for Design and Technology in Electronic Packaging (SIITME)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115408336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Transmission line effects in Class D amplifiers — The peak control function as a design tool","authors":"D. Vuza, R. Frosch, M. Vlădescu","doi":"10.1109/SIITME.2012.6384345","DOIUrl":"https://doi.org/10.1109/SIITME.2012.6384345","url":null,"abstract":"Class D amplifiers find new applications in RFID systems, because of their high efficiency. Most textbooks describe the case of a load directly connected to the amplifier. However, in most RFID systems the usage of a transmission line is mandatory and this may introduce some novel effects, in the form of an infinite series of peaks in the system transfer functions. If not appropriately taken care of, these effects may lead to EMC issues. The purpose of the paper is to introduce the peak control function that allows the designer to keep the magnitude of the peaks and hence their influence on the system into well defined limits.","PeriodicalId":273985,"journal":{"name":"2012 IEEE 18th International Symposium for Design and Technology in Electronic Packaging (SIITME)","volume":"314 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116375661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
I. Ciocan, C. Farcas, D. Petreus, N. Palaghita, A. Grama
{"title":"Over-current and short-circuit protection for IGBT's used in plasma generator inverter","authors":"I. Ciocan, C. Farcas, D. Petreus, N. Palaghita, A. Grama","doi":"10.1109/SIITME.2012.6384405","DOIUrl":"https://doi.org/10.1109/SIITME.2012.6384405","url":null,"abstract":"The protection of the IGBT's in the case of an over-current or a short-circuit, respects the general methodology of a power electronic device protection. Usually, every power device is protected by its driver, which becomes a multifunctional circuit capable of assuring the driving signal, monitoring the operation state as well as providing its protection. In this paper we propose and realize a protection driver based on monitoring the collector-to-emitter IGBT's voltage. The driver is simulated in OrCAD PSpice and the practical implementation is used as a laboratory setup in the educational field. In this way the students can simulate and test the operation principle of an intelligent gate driver. The application is original and suitable for plasma generator inverters, because the system has to ensure minimum voltage to maintain the plasma on the active electrode, under extreme load conditions: \"all\" or \"nothing\".","PeriodicalId":273985,"journal":{"name":"2012 IEEE 18th International Symposium for Design and Technology in Electronic Packaging (SIITME)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116594688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Study of glass transition temperature of electrically conductive adhesives","authors":"D. Bušek, P. Mach","doi":"10.1109/SIITME.2012.6384364","DOIUrl":"https://doi.org/10.1109/SIITME.2012.6384364","url":null,"abstract":"Isotropic electrically conductive adhesive with epoxy matrix filled with silver flakes was modified with addition of multi-walled silver nanotubes and with silver nanoparticles. Samples of adhesive as received and modified adhesive were formed. Part of the samples was aged in increased temperature, in increased humidity and in elevated temperature combined with humidity. Glass transition temperature of samples was investigated using dynamic thermo-mechanical analysis in penetration mode. It was found that the glass transition temperature increases after temperature aging for all - modified and non-modified formulations. The reason is additional curing of adhesive during temperature ageing. Changes of the glass transition temperature after humidity and temperature/humidity aging are negative and the reason will still be deeper examined.","PeriodicalId":273985,"journal":{"name":"2012 IEEE 18th International Symposium for Design and Technology in Electronic Packaging (SIITME)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126768575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
B. Andreea, A. Vasile, P. Svasta, A. Alcade, E. Ramon
{"title":"Capacitive structures produced by printing technology","authors":"B. Andreea, A. Vasile, P. Svasta, A. Alcade, E. Ramon","doi":"10.1109/SIITME.2012.6384350","DOIUrl":"https://doi.org/10.1109/SIITME.2012.6384350","url":null,"abstract":"The experiments presented here aim at achieving capacitor structures of different sizes, but fabricated with the same materials and measured under the same conditions. For printing the conductive part, the silver ink SunTronic EMD 5603 was used. For the dielectric poly-4-vinylphenol (PVP - is a water soluble polymer) was used. The aim was to obtain a structure of two capacitors, in series, on flexible substrate. Printed routes are arranged in the shape of a pyramid, from small to large, so that connections to PVP cannot join. After printing each layer, the structure was subjected to heat treatment to evaporate solvents from inks and for fixing the layers. The measured capacity, from these structures, of the devices ranges from 560 pF to 3nF.","PeriodicalId":273985,"journal":{"name":"2012 IEEE 18th International Symposium for Design and Technology in Electronic Packaging (SIITME)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121808444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Real-time sensor acquisition interfacing using MatLAB","authors":"V. Bande, S. Pop, I. Ciascai, D. Pitica","doi":"10.1109/SIITME.2012.6384373","DOIUrl":"https://doi.org/10.1109/SIITME.2012.6384373","url":null,"abstract":"One of the most important procedures which must be done in the dam's monitoring process, from the dam behavior point of view, is the analysis of the data acquired from the sensors mounted inside or in the proximity of the dam. The analysis can be done in two ways: real-time - using a direct dedicated interfacing algorithm with one or more sensors, respectively a so called historical analysis - using large data packets acquired during long time periods. The first acquisition procedure shows the behavior of a sensor at an exact moment, while the second reveals - in the end - the dam behavior and suggests the proper actions that must be taken to secure the dam infrastructure.","PeriodicalId":273985,"journal":{"name":"2012 IEEE 18th International Symposium for Design and Technology in Electronic Packaging (SIITME)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127652659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Investigation of the oxidation process at the copper-solder interface with atomic force microscopy","authors":"A. Bonyár, T. Hurtony, Szabolcs David","doi":"10.1109/SIITME.2012.6384400","DOIUrl":"https://doi.org/10.1109/SIITME.2012.6384400","url":null,"abstract":"In this work the investigation of copper-solder interface with Atomic Force Microscope (AFM) is presented. Multiple contact and tapping-mode AFM images were made on presoldered cross-sectional SAC (Sn-Ag-Cu) solder joint samples. The formation of oxide layer was observed and the structural properties of oxide were monitored in time. Our aim was to determine the maximum idle time between the sample preparation and the further analysis, based on only the monitored corrosion profile of the copper-solder interface.","PeriodicalId":273985,"journal":{"name":"2012 IEEE 18th International Symposium for Design and Technology in Electronic Packaging (SIITME)","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131547778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}