International Conference on Advanced Optical Materials and Devices最新文献_第9页

Dielectric response to low and infra-low frequency in layered ferroelectrics 层状铁电体低频和次低频的介电响应

International Conference on Advanced Optical Materials and Devices Pub Date : 2006-02-19 DOI: 10.1117/12.726554

K. Bormanis, V. Nesterov, A. Burkhanov, Y. Kochergin, M. Dambekalne, A. Kalvāne

引用次数: 1

Light emission properties of nanoparticles doped with transition metal and rare earth ions 掺杂过渡金属和稀土离子的纳米粒子的发光特性

International Conference on Advanced Optical Materials and Devices Pub Date : 2006-02-19 DOI: 10.1117/12.726353

M. Godlewski, Sergey Yatsunneko, M. Godlewski

引用次数: 0

Patterning of ITO with picosecond lasers 皮秒激光ITO图像化

International Conference on Advanced Optical Materials and Devices Pub Date : 2006-02-19 DOI: 10.1117/12.726407

G. Račiukaitis, M. Brikas, M. Gedvilas, G. Darcianovas

{"title":"Patterning of ITO with picosecond lasers","authors":"G. Račiukaitis, M. Brikas, M. Gedvilas, G. Darcianovas","doi":"10.1117/12.726407","DOIUrl":"https://doi.org/10.1117/12.726407","url":null,"abstract":"Indium-tin oxide (ITO) is the main material for making transparent electrodes in electronic devices and flat panel displays. Laser-direct-write technology has been widely used for patterning ITO. The well defined edges and good electrical isolation at a short separation are required for the modern OLED and RFID devices of high packing density. High repetition rate lasers with a short, picosecond pulse width offer new possibilities for high efficiency structuring of transparent conductors on glass and other substrates. The results of patterning the ITO film on glass with picosecond lasers at various wavelengths are presented. Laser radiation initiated ablation of the material, forming trenches in ITO. Profile of the trenches was analyzed with a phase contrast optical microscope, a stylus type profiler, SEM and AFM. Clean removal of the ITO layer was achieved with the 266 nm radiation when laser fluence was above the threshold at 0.20 J/cm2, while for the 355 nm radiation the threshold was higher, above 0.46 J/cm2. The glass substrate was damaged in the area where the fluence was higher than 1.55 J/cm2. The 532 nm radiation allowed getting well defined trenches, but a lot of residues in the form of dust were generated on the surface. UV radiation at the 266 nm provided the widest working window for ITO ablation without damage of the substrate. Use of UV laser radiation with fluences close to the ablation threshold made it possible to minimize surface contamination and the recast ridge formation during the process.","PeriodicalId":273853,"journal":{"name":"International Conference on Advanced Optical Materials and Devices","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123963042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Laser-induced damage threshold measurements of high reflecting dielectric layers 高反射介质层激光损伤阈值测量

International Conference on Advanced Optical Materials and Devices Pub Date : 2006-02-19 DOI: 10.1117/12.726549

A. Melninkaitis, D. Mikšys, V. Sirutkaitis, G. Abromavičius, R. Buzelis, R. Drazdys

{"title":"Laser-induced damage threshold measurements of high reflecting dielectric layers","authors":"A. Melninkaitis, D. Mikšys, V. Sirutkaitis, G. Abromavičius, R. Buzelis, R. Drazdys","doi":"10.1117/12.726549","DOIUrl":"https://doi.org/10.1117/12.726549","url":null,"abstract":"A quest for higher laser powers is one of the main driving forces in development of laser technology. Unfortunately all laser components have some limit to the intensity of optical radiation that can be applied on them - the so-called laser-induced damage threshold (LIDT). To enable further power scaling of laser devices, novel highly resistant optical components have to be developed. Such components are laser crystals, mirrors, fibers and other components typically coated with periodic dielectric layers made using e-beam, sputtering or sol-gel technologies. The production materials and methods of all the mentioned optics are under constant development, which requires a reliable quality test to provide the feedback to the manufacturing process; one of such tests are the measurements of LIDT. LIDT measurement procedure using repetitive laser pulses, as described in ISO 11254-2 standard, is time- and human resource consuming, if performed without automation. We developed an automated station for the measurements of LIDT that greatly reduces the required human resources and allows fast data collection. In this presentation, we briefly describe the main components of this automated LIDT test station. Furthermore we present the comparison of the latest results obtained on LIDT measurements of ZrO2/SiO2, Nb2O5/SiO2, Ta2O5/SiO2 and TiO2/SiO2 periodic high reflecting dielectric layers performed using repetitive nanosecond laser pulses.","PeriodicalId":273853,"journal":{"name":"International Conference on Advanced Optical Materials and Devices","volume":"25 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130022022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Influence of annealing on atomic layer deposited Cr2O3-TiO2 thin films 退火对沉积Cr2O3-TiO2薄膜原子层的影响

International Conference on Advanced Optical Materials and Devices Pub Date : 2006-02-19 DOI: 10.1117/12.726496

R. Pärna, A. Tarre, A. Gerst, H. Mändar, A. Niilisk, T. Uustare, A. Rosental, V. Sammelselg

引用次数: 5

Dielectric properties of KDP crystal damaged by laser beam 激光损伤KDP晶体的介电性能

International Conference on Advanced Optical Materials and Devices Pub Date : 2006-02-19 DOI: 10.1117/12.726561

A. Gutgalis, J. Banys, V. Sirutkaitis, R. Grigalaitis

引用次数: 1

Optical characterization of the LiInS2 and LiInSe2 crystals LiInS2和liinsse2晶体的光学特性

International Conference on Advanced Optical Materials and Devices Pub Date : 2006-02-19 DOI: 10.1117/12.726551

O. Balachninaitė, L. Petravičiūtė, M. Maciulevičius, V. Sirutkaitis, L. Isaenko, S. Lobanov, A. Yelisseyev, J. Zondy

引用次数: 3

GaAs/AlGaAs structures with &dgr;-doped layer for microwave detection 微波探测用掺杂&dgr层的GaAs/AlGaAs结构

International Conference on Advanced Optical Materials and Devices Pub Date : 2006-02-19 DOI: 10.1117/12.726409

A. Sužiedėlis, V. Petkun, A. Kozič, V. Kazlauskaitė, A. Cerskus, G. Steikūnas, J. Gradauskas, J. Kundrotas, S. Ašmontas, I. Papsujeva, A. Narkūnas, T. Anbinderis, V. Umansky, H. Shtrikmann

引用次数: 1

Deeper insight into non-equilibrium carrier dynamics in InP:Fe: experimental and modeling InP:Fe中非平衡载流子动力学的深入研究:实验和建模

International Conference on Advanced Optical Materials and Devices Pub Date : 2006-02-19 DOI: 10.1117/12.726452

A. Kadys, R. Aleksieju̅nas, K. Jarašiūnas, L. Subačius

引用次数: 0

Ripple formation at laser ablation of chromium thin film 激光烧蚀铬薄膜时波纹的形成

International Conference on Advanced Optical Materials and Devices Pub Date : 2006-02-19 DOI: 10.1117/12.726445

K. Regelskis, G. Račiukaitis, P. Gečys

{"title":"Ripple formation at laser ablation of chromium thin film","authors":"K. Regelskis, G. Račiukaitis, P. Gečys","doi":"10.1117/12.726445","DOIUrl":"https://doi.org/10.1117/12.726445","url":null,"abstract":"Ablation characteristics of chromium thin film on a glass substrate by nanosecond laser pulses were investigated. The laser beam was tightly focused through the glass substrate to a stripe-like spot using the acylindrical lens. The metal was removed only by the central part of the laser beam, where local laser fluence exceeded the well-defined ablation threshold. Formation of a wide area cleaned by the series of laser pulses caused some side effects. The stripe ablated by a single laser pulse had sharp edges on both sides, while the partially overlapping pulses formed a wide stripe with a complicated structure made of the remaining metal. Regular structures, ripples, were developed when laser fluence was slightly above the threshold and the shift between pulses was less than a half width of the line ablated by a single laser pulse. The ripples were located periodically (~4 &mgr;) and were orientated perpendicularly to the long axis of the beam spot (in parallel to the laser pulse shift direction). Their direction did not depend on the laser beam polarization. Different models of the ripple formation in the thin metal film were considered, and instability of the moving vapor-liquid- solid contact line during evaporation of thin liquid films appear to be the most appropriate process responsible for the observed phenomena. Regular gratings with the unlimited line length can be produced by using the technique.","PeriodicalId":273853,"journal":{"name":"International Conference on Advanced Optical Materials and Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128439169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0