A. Sužiedėlis, V. Petkun, A. Kozič, V. Kazlauskaitė, A. Cerskus, G. Steikūnas, J. Gradauskas, J. Kundrotas, S. Ašmontas, I. Papsujeva, A. Narkūnas, T. Anbinderis, V. Umansky, H. Shtrikmann
{"title":"微波探测用掺杂&dgr层的GaAs/AlGaAs结构","authors":"A. Sužiedėlis, V. Petkun, A. Kozič, V. Kazlauskaitė, A. Cerskus, G. Steikūnas, J. Gradauskas, J. Kundrotas, S. Ašmontas, I. Papsujeva, A. Narkūnas, T. Anbinderis, V. Umansky, H. Shtrikmann","doi":"10.1117/12.726409","DOIUrl":null,"url":null,"abstract":"Planar microwave detectors on the base of modulation doped AlGaAs/GaAs structures with &dgr;-doped layer were investigated in (26÷120) GHz frequency range. Comparison of the features of the microwave diodes on the base of modulation doped structures with &dgr;- and smoothly-distributed doping impurities in the AlGaAs barrier is presented. Influence of the layers composing the modulation doped structure onto detective properties of the microwave diodes is ascertained both theoretically and experimentally. In the case of the structure with &dgr;-doping this influence was less, especially, in the case of symmetrically shaped structure with n-n+ and homogeneous asymmetrically shaped modulation doped structure.","PeriodicalId":273853,"journal":{"name":"International Conference on Advanced Optical Materials and Devices","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"GaAs/AlGaAs structures with &dgr;-doped layer for microwave detection\",\"authors\":\"A. Sužiedėlis, V. Petkun, A. Kozič, V. Kazlauskaitė, A. Cerskus, G. Steikūnas, J. Gradauskas, J. Kundrotas, S. Ašmontas, I. Papsujeva, A. Narkūnas, T. Anbinderis, V. Umansky, H. Shtrikmann\",\"doi\":\"10.1117/12.726409\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Planar microwave detectors on the base of modulation doped AlGaAs/GaAs structures with &dgr;-doped layer were investigated in (26÷120) GHz frequency range. Comparison of the features of the microwave diodes on the base of modulation doped structures with &dgr;- and smoothly-distributed doping impurities in the AlGaAs barrier is presented. Influence of the layers composing the modulation doped structure onto detective properties of the microwave diodes is ascertained both theoretically and experimentally. In the case of the structure with &dgr;-doping this influence was less, especially, in the case of symmetrically shaped structure with n-n+ and homogeneous asymmetrically shaped modulation doped structure.\",\"PeriodicalId\":273853,\"journal\":{\"name\":\"International Conference on Advanced Optical Materials and Devices\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-02-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Advanced Optical Materials and Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.726409\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Advanced Optical Materials and Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.726409","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
GaAs/AlGaAs structures with &dgr;-doped layer for microwave detection
Planar microwave detectors on the base of modulation doped AlGaAs/GaAs structures with &dgr;-doped layer were investigated in (26÷120) GHz frequency range. Comparison of the features of the microwave diodes on the base of modulation doped structures with &dgr;- and smoothly-distributed doping impurities in the AlGaAs barrier is presented. Influence of the layers composing the modulation doped structure onto detective properties of the microwave diodes is ascertained both theoretically and experimentally. In the case of the structure with &dgr;-doping this influence was less, especially, in the case of symmetrically shaped structure with n-n+ and homogeneous asymmetrically shaped modulation doped structure.
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