GaAs/AlGaAs structures with &dgr;-doped layer for microwave detection

Abstract

Planar microwave detectors on the base of modulation doped AlGaAs/GaAs structures with &dgr;-doped layer were investigated in (26÷120) GHz frequency range. Comparison of the features of the microwave diodes on the base of modulation doped structures with &dgr;- and smoothly-distributed doping impurities in the AlGaAs barrier is presented. Influence of the layers composing the modulation doped structure onto detective properties of the microwave diodes is ascertained both theoretically and experimentally. In the case of the structure with &dgr;-doping this influence was less, especially, in the case of symmetrically shaped structure with n-n+ and homogeneous asymmetrically shaped modulation doped structure.