64th ARFTG Microwave Measurements Conference, Fall 2004.最新文献

{"title":"Experimental analysis of short-circuit line technique for measuring permeability of ferromagnetic materials","authors":"V. Bregar, D. Lisjak, A. Nidarsic, M. Drofenik","doi":"10.1109/ARFTGF.2004.1427581","DOIUrl":"https://doi.org/10.1109/ARFTGF.2004.1427581","url":null,"abstract":"Measurement of S-parameters in order to determine permeability and permittivity of materials is a well-established method, which has already been analyzed in great detail. However, the focus of the analysis has been the permittivity of dielectric materials. We have analyzed experimentally the short-circuit line technique for the determination of the permeability of ferrimagnetic materials, especially in the vicinity of ferromagnetic resonance where the material has high magnetic losses. We analyzed the fact that, by using samples with different lengths, we obtained different values for permeability and evaluated the difference as a function of sample length. Further, we compared the results obtained by single-sample and two-sample techniques and evaluated the influence of the distance between the sample and short circuit. The results were compared with the uncertainties due to measurement errors (sample length, sample position, reference plane position). We have analyzed sintered ferrite materials and also compared the inevitable variability of the samples' permeability characteristics.","PeriodicalId":273791,"journal":{"name":"64th ARFTG Microwave Measurements Conference, Fall 2004.","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116285867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A now concept of PTP vector network analyzer","authors":"V. Závodný, K. Hoffmann, Z. Škvor","doi":"10.1109/ARFTGF.2004.1427594","DOIUrl":"https://doi.org/10.1109/ARFTGF.2004.1427594","url":null,"abstract":"A new concept for vector network analyzers design based on a perturbation two-port (PTP) is presented. The approach uses redundant states of the PTP. The best states of the PTP for a certain place in Smith chart and frequency are chosen to determine a reflection coefficient with minimum uncertainty. Four criteria for the selection are designed. The criteria were tested on measured parameters of different states of the PTP. Significant improvements in PTP bandwidth and uncertainty of measured data were achieved. Summary Six-port vector network analyzers (VNA) are well known for decades, [1]. Similar concept using only a scalar network analyzer and a PTP was designed in [2], where only a basic principle was designed and experimentally verified using a PTP with properties far from optimum. No recommendations for the structure of the PTP were given. Some suggestions for an optimum three state PTP can be found in [3], yet the states of the PTP are unpractical for a realization and are suitable only in a narrow frequency bandwidth. The main demand in the PTP design is to realize optimum states valid on the whole Smith chart in wide frequency band. These demands can be hardly satisfied with any minimum 3-states PTP. The solution is a new concept of the PTP vector network analyzer based on redundant multi-state PTP. It releases the demands on PTP so that they must be satisfied only in a part of Smith chart. The concept can be summarized into three key steps. • over-determination of measured data using more than three minimum states of the PTP • approximate determination of measured reflection coefficient in Smith chart using proper three PTP states • state the measured reflection coefficient more precisely applying the best PTP states determined in given frequency in corresponding part of Smith chart by proper test criteria The purpose of this paper is to present proper criteria for the PTP state selection and a new circuit solution for individual states of the 7-state PTP. Theory A typical arrangement of the new PTP vector network analyzer with seven switched PTP states is presented in Fig.1. P m 1 PTP 7 PTP 2 PTP 1","PeriodicalId":273791,"journal":{"name":"64th ARFTG Microwave Measurements Conference, Fall 2004.","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125862505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A non-contacting sampled-line reflectometer for microwave scattering parameter measurements","authors":"D. Hui, R. Weikle","doi":"10.1109/ARFTGF.2004.1427585","DOIUrl":"https://doi.org/10.1109/ARFTGF.2004.1427585","url":null,"abstract":"A proof-of-concept non-contacting reflectometer is presented. The reflectometer utilizes a novel planar probing structure for sampling traveling waves and is based on the well known \"sampled-line-reflectometer\" architecture. Compared to the coaxial probe methods commonly used for non-contacting measurements, the planar probing structure has the advantages of (1) simple fabrication, (2) precise probe positioning control and (3) capability of being scaled to the millimeter-wave band. To assess the performance of the reflectometer, scattering parameter measurements have been performed on high, medium and low reflection loads over an octave bandwidth from 0.75 GHz to 1.5 GHz. The s-parameters derived from the reflectometer measurements are compared with those obtained from a commercial HP 8720C network analyzer and show good agreement for medium and low-reflection loads, with measurement discrepancy less than 2%. However, measurement errors can be as large as 13% for high reflection loads. This can be attributed, in part, to the five-port \"sampled-line\" architecture adopted. Although the simplicity of the design makes it readily amenable to scaling to higher frequency bands, precise measurement of the voltage standing-wave nodes associated with high-reflection loads limits the accuracy of the instrument for certain measurements. Nonetheless, the approach of combining the six-port measurement technique with planar probing structures shows promise for yielding a non-contacting measurement infrastructure for in-situ characterization of integrated microwave subsystems and modules.","PeriodicalId":273791,"journal":{"name":"64th ARFTG Microwave Measurements Conference, Fall 2004.","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131844089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Analysing impact of MOSFET oxide breakdown by small- and large-signal HF measurements","authors":"D. Schreurs, L. Pantisano, B. Kaczer","doi":"10.1109/ARFTGF.2004.1427575","DOIUrl":"https://doi.org/10.1109/ARFTGF.2004.1427575","url":null,"abstract":"The impact of gate oxide breakdown on the performance of 90 nm RF-CMOS devices is studied. A thorough analysis of the S-parameter and large-signal HF measurement results confirm that the gate oxide mechanism is purely resistive. Therefore, the fundamental parameters characterizing gate oxide breakdown (i.e., the values for R/sub GS/ and R/sub GD/, and the reduction of G/sub M/) can equally well be derived from DC, small-signal HF, or large-signal HF measurements. In all cases, the same dependency on breakdown position as well as on DC bias is found. Combining these parameters with a standard HF model for a fresh device allows to predict changes in HF figures of merit without the need for time-consuming HF measurements. When no standard model is available, the added value of HF measurements is being able to estimate at which rate the impact of gate oxide breakdown reduces as function of frequency. The advantage of large-signal HF measurements over S-parameter measurements is that the visualization in terms of trajectories facilitates the interpretation, because variations in either or both resistive and capacitive components can instantly be caught.","PeriodicalId":273791,"journal":{"name":"64th ARFTG Microwave Measurements Conference, Fall 2004.","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125030747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of RF measurement uncertainties on model uncertainties: practical case of a SiGe HBT","authors":"D. Schreurs, H. Hussain, H. Taher, B. Nauwelaers","doi":"10.1109/ARFTGF.2004.1427568","DOIUrl":"https://doi.org/10.1109/ARFTGF.2004.1427568","url":null,"abstract":"Measurement based models, like small-signal equivalent circuit models of microwave transistors, are often extracted under the assumption of having perfect measurements. In this work we study how the uncertainties of S-parameter measurements affect the uncertainties of model element values in the practical case of a SiGe HBT.","PeriodicalId":273791,"journal":{"name":"64th ARFTG Microwave Measurements Conference, Fall 2004.","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128642768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"On-wafer measurement setups for on-chip antennas fabricated on silicon substrates","authors":"Jau-Jr Lin, A. Sugavanam, L. Gao, J. Brewer, K. O","doi":"10.1109/ARFTGF.2004.1427604","DOIUrl":"https://doi.org/10.1109/ARFTGF.2004.1427604","url":null,"abstract":"The paper presents the measurement setups of on-chip antennas for short range communications over free space (/spl mu/Node applications). To evaluate the on-chip antenna characteristics in realistic indoor and outdoor operating environments, two mobile microwave probe stands have been constructed using Delrin (a type of plastic, /spl epsiv//sub r/ /spl sim/3.7). Each stand is equipped with a probe holder and a cable connection to a test instrument. The stands can be connected to a network analyzer for 1-port or 2-port S-parameter measurements. By connecting a spectrum analyzer and a signal generator to these mobile probe stands, power gains between a pair of antennas as a function of separation can be measured. Simulation and measurement results suggest that the effects of probe stands on antenna characteristics are small.","PeriodicalId":273791,"journal":{"name":"64th ARFTG Microwave Measurements Conference, Fall 2004.","volume":"130 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122961585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}