一种用于微波散射参数测量的非接触式采样线反射计

D. Hui, R. Weikle
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引用次数: 3

摘要

提出了一种概念验证的非接触式反射计。该反射计采用了一种新颖的平面探测结构来对行波进行采样,并基于众所周知的“采样线反射计”结构。与非接触式测量常用的同轴探头方法相比,平面探头结构具有以下优点:(1)制作简单;(2)探头定位控制精确;(3)可缩放到毫米波波段。为了评估反射计的性能,在0.75 GHz至1.5 GHz的频宽范围内对高、中、低反射负载进行了散射参数测量。由反射计测量得到的s参数与商用hp8720c网络分析仪测量得到的s参数进行了比较,结果表明,在中、低反射负载下,s参数的测量结果一致,误差小于2%。然而,对于高反射负载,测量误差可高达13%。这可以部分归因于所采用的五端口“采样线”架构。虽然设计的简单性使其易于缩放到更高的频段,但与高反射负载相关的电压驻波节点的精确测量限制了仪器对某些测量的精度。尽管如此,将六端口测量技术与平面探测结构相结合的方法有望为集成微波子系统和模块的原位表征提供非接触式测量基础设施。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A non-contacting sampled-line reflectometer for microwave scattering parameter measurements
A proof-of-concept non-contacting reflectometer is presented. The reflectometer utilizes a novel planar probing structure for sampling traveling waves and is based on the well known "sampled-line-reflectometer" architecture. Compared to the coaxial probe methods commonly used for non-contacting measurements, the planar probing structure has the advantages of (1) simple fabrication, (2) precise probe positioning control and (3) capability of being scaled to the millimeter-wave band. To assess the performance of the reflectometer, scattering parameter measurements have been performed on high, medium and low reflection loads over an octave bandwidth from 0.75 GHz to 1.5 GHz. The s-parameters derived from the reflectometer measurements are compared with those obtained from a commercial HP 8720C network analyzer and show good agreement for medium and low-reflection loads, with measurement discrepancy less than 2%. However, measurement errors can be as large as 13% for high reflection loads. This can be attributed, in part, to the five-port "sampled-line" architecture adopted. Although the simplicity of the design makes it readily amenable to scaling to higher frequency bands, precise measurement of the voltage standing-wave nodes associated with high-reflection loads limits the accuracy of the instrument for certain measurements. Nonetheless, the approach of combining the six-port measurement technique with planar probing structures shows promise for yielding a non-contacting measurement infrastructure for in-situ characterization of integrated microwave subsystems and modules.
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