{"title":"一种用于微波散射参数测量的非接触式采样线反射计","authors":"D. Hui, R. Weikle","doi":"10.1109/ARFTGF.2004.1427585","DOIUrl":null,"url":null,"abstract":"A proof-of-concept non-contacting reflectometer is presented. The reflectometer utilizes a novel planar probing structure for sampling traveling waves and is based on the well known \"sampled-line-reflectometer\" architecture. Compared to the coaxial probe methods commonly used for non-contacting measurements, the planar probing structure has the advantages of (1) simple fabrication, (2) precise probe positioning control and (3) capability of being scaled to the millimeter-wave band. To assess the performance of the reflectometer, scattering parameter measurements have been performed on high, medium and low reflection loads over an octave bandwidth from 0.75 GHz to 1.5 GHz. The s-parameters derived from the reflectometer measurements are compared with those obtained from a commercial HP 8720C network analyzer and show good agreement for medium and low-reflection loads, with measurement discrepancy less than 2%. However, measurement errors can be as large as 13% for high reflection loads. This can be attributed, in part, to the five-port \"sampled-line\" architecture adopted. Although the simplicity of the design makes it readily amenable to scaling to higher frequency bands, precise measurement of the voltage standing-wave nodes associated with high-reflection loads limits the accuracy of the instrument for certain measurements. Nonetheless, the approach of combining the six-port measurement technique with planar probing structures shows promise for yielding a non-contacting measurement infrastructure for in-situ characterization of integrated microwave subsystems and modules.","PeriodicalId":273791,"journal":{"name":"64th ARFTG Microwave Measurements Conference, Fall 2004.","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A non-contacting sampled-line reflectometer for microwave scattering parameter measurements\",\"authors\":\"D. Hui, R. Weikle\",\"doi\":\"10.1109/ARFTGF.2004.1427585\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A proof-of-concept non-contacting reflectometer is presented. The reflectometer utilizes a novel planar probing structure for sampling traveling waves and is based on the well known \\\"sampled-line-reflectometer\\\" architecture. Compared to the coaxial probe methods commonly used for non-contacting measurements, the planar probing structure has the advantages of (1) simple fabrication, (2) precise probe positioning control and (3) capability of being scaled to the millimeter-wave band. To assess the performance of the reflectometer, scattering parameter measurements have been performed on high, medium and low reflection loads over an octave bandwidth from 0.75 GHz to 1.5 GHz. The s-parameters derived from the reflectometer measurements are compared with those obtained from a commercial HP 8720C network analyzer and show good agreement for medium and low-reflection loads, with measurement discrepancy less than 2%. However, measurement errors can be as large as 13% for high reflection loads. This can be attributed, in part, to the five-port \\\"sampled-line\\\" architecture adopted. Although the simplicity of the design makes it readily amenable to scaling to higher frequency bands, precise measurement of the voltage standing-wave nodes associated with high-reflection loads limits the accuracy of the instrument for certain measurements. Nonetheless, the approach of combining the six-port measurement technique with planar probing structures shows promise for yielding a non-contacting measurement infrastructure for in-situ characterization of integrated microwave subsystems and modules.\",\"PeriodicalId\":273791,\"journal\":{\"name\":\"64th ARFTG Microwave Measurements Conference, Fall 2004.\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-12-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"64th ARFTG Microwave Measurements Conference, Fall 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ARFTGF.2004.1427585\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"64th ARFTG Microwave Measurements Conference, Fall 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARFTGF.2004.1427585","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A non-contacting sampled-line reflectometer for microwave scattering parameter measurements
A proof-of-concept non-contacting reflectometer is presented. The reflectometer utilizes a novel planar probing structure for sampling traveling waves and is based on the well known "sampled-line-reflectometer" architecture. Compared to the coaxial probe methods commonly used for non-contacting measurements, the planar probing structure has the advantages of (1) simple fabrication, (2) precise probe positioning control and (3) capability of being scaled to the millimeter-wave band. To assess the performance of the reflectometer, scattering parameter measurements have been performed on high, medium and low reflection loads over an octave bandwidth from 0.75 GHz to 1.5 GHz. The s-parameters derived from the reflectometer measurements are compared with those obtained from a commercial HP 8720C network analyzer and show good agreement for medium and low-reflection loads, with measurement discrepancy less than 2%. However, measurement errors can be as large as 13% for high reflection loads. This can be attributed, in part, to the five-port "sampled-line" architecture adopted. Although the simplicity of the design makes it readily amenable to scaling to higher frequency bands, precise measurement of the voltage standing-wave nodes associated with high-reflection loads limits the accuracy of the instrument for certain measurements. Nonetheless, the approach of combining the six-port measurement technique with planar probing structures shows promise for yielding a non-contacting measurement infrastructure for in-situ characterization of integrated microwave subsystems and modules.