射频测量不确定度对模型不确定度的影响:SiGe HBT的实际案例

64th ARFTG Microwave Measurements Conference, Fall 2004. Pub Date : 2004-11-01 DOI:10.1109/ARFTGF.2004.1427568

D. Schreurs, H. Hussain, H. Taher, B. Nauwelaers

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引用次数: 3

摘要

基于测量的模型，如微波晶体管的小信号等效电路模型，通常是在具有完美测量的假设下提取的。在这项工作中，我们研究了s参数测量的不确定性如何影响SiGe HBT实际情况下模型元素值的不确定性。

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Influence of RF measurement uncertainties on model uncertainties: practical case of a SiGe HBT

Measurement based models, like small-signal equivalent circuit models of microwave transistors, are often extracted under the assumption of having perfect measurements. In this work we study how the uncertainties of S-parameter measurements affect the uncertainties of model element values in the practical case of a SiGe HBT.

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64th ARFTG Microwave Measurements Conference, Fall 2004.

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